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在无规分形结构的α氧化铝陶瓷断面上,用射频溅射法镀制了银薄膜,其I-V特性在空气中呈非线性行为,而在原位真空测量中表现为开关形式的电压击穿效应。基于衬底的结构特性,作者对上述现象作了合理的解释。The silver thin films were deposited on the substrates of the α-alumina ceramic which possess a random fractal structure. The I-V characteristics of such films exhi bit nonlinear behavior in air and a switching type voltage breakdown effect by in situ measurement in vacuum. Based on the structure geometry of the substrate, we explaine these phenomena with the developed Random Tunnelling Junction Network model.
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