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本文报道了分子束外延调制掺杂GaAs/N-AIGaAs二维电子气材料的低温光致荧光结果。实验表明,光致荧光谱分析可以作为二维电子气材料的质量诊断技术,由光致荧光谱得到的质量评价与材料的电学性能恰相对应,这就为改进分子束外延工艺提供了依据。The results of photolumenescence measurements of modulation doped GaAs/N-AlGaAs 2DEG at 4.2 K are reported. They show that the photolumenescence method can be used as a diagnostic means for determing the quality of 2DEG materials. The features of the spectra have some correlation with electronic properties of 2DEG and provide some possibilities for improving MBE technology.
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