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氧空位对钴掺杂氧化锌半导体磁性能的影响

陈静 金国钧 马余强

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氧空位对钴掺杂氧化锌半导体磁性能的影响

陈静, 金国钧, 马余强

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductor

Chen Jing, Jin Guo-Jun, Ma Yu-Qiang
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  • 从实验和理论上阐述了氧空位对Co掺杂ZnO半导体磁性能的影响.采用磁控溅射法在不同的氧分压下制备了Zn095Co005O薄膜,研究了氧分压对薄膜磁性能的影响.实验结果表明,高真空条件下制备的Zn095Co005O薄膜具有室温铁磁性,提高氧分压后制备的薄膜铁磁性逐渐消失.第一性原理计算表明,在Co掺杂ZnO体系中引入氧空位有利于降低铁磁态的能量,铁磁态的稳定性与氧空位和Co之间的距离密切相关.
    Zn095Co005O films were prepared under different oxygen partial pressure P by magnetron sputtering. The effect of P on the magnetic and electrical properties was investigated. The effect of oxygen vacancy on the magnetic properties was also calculated by first-principles calculation. The experimental results indicated that Zn095Co005O films showed room-temperature ferromagnetism and high electron concentration when they were deposited under high vacuum. The ferromagnetism disappeared and the electron concentration decreased sharply when P was increased. The calculated results indicated that the energy of ferromagnetic states could be decreased by introducing oxygen vacancy in Co-doped ZnO system. The stability of ferromagnetism was determined by the distance between oxygen vacancy and Co atoms.
    • 基金项目: 国家自然科学基金(批准号:60371013,10674058)和江苏省自然科学基金(批准号:BK2002086)资助的课题.
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  • 文章访问数:  8080
  • PDF下载量:  1665
  • 被引次数: 0
出版历程
  • 收稿日期:  2008-06-10
  • 修回日期:  2008-09-18
  • 刊出日期:  2009-02-05

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