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离子注入硅片快速退火后的红外椭偏光谱研究

刘显明 李斌成 高卫东 韩艳玲

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离子注入硅片快速退火后的红外椭偏光谱研究

刘显明, 李斌成, 高卫东, 韩艳玲

Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers

Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling
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  • 离子注入硅片经高温退火后晶体结构缺陷会被修复,其在可见光波段下的光学性质趋于单晶硅,常规的可见光椭偏光谱法对掺杂影响的测量不再有效. 本研究将测量波段扩展到红外区域(2—20 μm),报道了利用红外椭偏光谱法测量经离子注入掺杂并高温退火的硅片掺杂层光学和电学性质的方法和结果. 通过建立基于Drude自由载流子吸收的等效光学模型,得到了杂质激活后掺杂层的杂质浓度分布、电阻率和载流子迁移率等电学参数,以及掺杂层的红外光学常数色散关系,分析了这些参数随注入剂量的关系并对其物理机理给予了解释. 研究表明,中远红外
    The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2—20 μm) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength should be used to distinguish lower impurity concentration.
    • 基金项目: 国家自然科学基金(批准号:60676058)资助的课题.
    [1]

    [1]Chen Z M, Wang J N 1999 Basic Material Physics for Semiconductor Devices (Beijing: Science Press) chap 4,5 (in Chinese)[陈治明、 王建农 1999 半导体器件的材料物理学基础 (科学出版社: 北京)第4,5章]

    [2]

    [2]Runyan W R, Shaffner T J 1998 Semiconductor Measurements and Instrumentation (New York: McGraw-Hill)

    [3]

    [3]Hilfiker J N, Bungay C L, Synowicki R A, Tiwald T E, Herzinger C M, Johs B, Pribil G K, Woollam J A 2003 J. Vac. Sci. Technol. A 21 1103

    [4]

    [4]Tompkins H G, Irene E A 2005 Handbook of Ellipsometry (Heidelberg: Springer-Verlag)

    [5]

    [5]Mo D, Ye X J 1981 Acta Phys. Sin. 30 1287 (in Chinese)[莫党、 叶贤京 1981 物理学报 30 1287]

    [6]

    [6]Cortot J P, Ged P 1982 Appl. Phys. Lett. 41 93

    [7]

    [7]Tsunoda K, Adachi S, Takahashi M 2002 J. Appl. Phys. 91 2936

    [8]

    [8]Hikino S, Adachi S 2004 J. Phys. D 37 1617

    [9]

    [9]Pelaz L, Marqués L, Barbolla J 2004 J. Appl. Phys. 96 5947

    [10]

    ]Lioudakis E, Christofides C, Othonos A 2006 J. Appl. Phys. 99 123514

    [11]

    ]Azzain R M, Bashara N M 1977 Ellipsometry and Polarized Light (Amsterdam: North Holland) chap 3

    [12]

    ]Su Q F, Liu J M, Wang L J, Shi W M, Xia Y B 2005 Acta Phys. Sin. 54 5145 (in Chinese)[苏青峰、刘健敏、王林军、史伟民、夏义本 2005 物理学报 54 5145]

    [13]

    ]Kasap S, Capper P 2006 Springer Handbook of Electronic and Photonic Materials (Springer Science: Heidelberg) chap 3.3

    [14]

    ]Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing:Publishing House of Electronics Industry) chap10 (in Chinese)[刘恩科、 朱秉生、 罗晋生 2008 半导体物理学 (电子工业出版社: 北京) 第十章]

    [15]

    ]Shen X C 2002 Semiconductor Spectrum and Optical Properties (Beijing: Science Press) (in Chinese)[沈学础 2002 半导体光谱和光学性质 (科学出版社: 北京)]

    [16]

    ]Tiwald T E, Thompson D W, Woollam J A 1998 J. Vac. Sci. Technol. B 16 312

  • [1]

    [1]Chen Z M, Wang J N 1999 Basic Material Physics for Semiconductor Devices (Beijing: Science Press) chap 4,5 (in Chinese)[陈治明、 王建农 1999 半导体器件的材料物理学基础 (科学出版社: 北京)第4,5章]

    [2]

    [2]Runyan W R, Shaffner T J 1998 Semiconductor Measurements and Instrumentation (New York: McGraw-Hill)

    [3]

    [3]Hilfiker J N, Bungay C L, Synowicki R A, Tiwald T E, Herzinger C M, Johs B, Pribil G K, Woollam J A 2003 J. Vac. Sci. Technol. A 21 1103

    [4]

    [4]Tompkins H G, Irene E A 2005 Handbook of Ellipsometry (Heidelberg: Springer-Verlag)

    [5]

    [5]Mo D, Ye X J 1981 Acta Phys. Sin. 30 1287 (in Chinese)[莫党、 叶贤京 1981 物理学报 30 1287]

    [6]

    [6]Cortot J P, Ged P 1982 Appl. Phys. Lett. 41 93

    [7]

    [7]Tsunoda K, Adachi S, Takahashi M 2002 J. Appl. Phys. 91 2936

    [8]

    [8]Hikino S, Adachi S 2004 J. Phys. D 37 1617

    [9]

    [9]Pelaz L, Marqués L, Barbolla J 2004 J. Appl. Phys. 96 5947

    [10]

    ]Lioudakis E, Christofides C, Othonos A 2006 J. Appl. Phys. 99 123514

    [11]

    ]Azzain R M, Bashara N M 1977 Ellipsometry and Polarized Light (Amsterdam: North Holland) chap 3

    [12]

    ]Su Q F, Liu J M, Wang L J, Shi W M, Xia Y B 2005 Acta Phys. Sin. 54 5145 (in Chinese)[苏青峰、刘健敏、王林军、史伟民、夏义本 2005 物理学报 54 5145]

    [13]

    ]Kasap S, Capper P 2006 Springer Handbook of Electronic and Photonic Materials (Springer Science: Heidelberg) chap 3.3

    [14]

    ]Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing:Publishing House of Electronics Industry) chap10 (in Chinese)[刘恩科、 朱秉生、 罗晋生 2008 半导体物理学 (电子工业出版社: 北京) 第十章]

    [15]

    ]Shen X C 2002 Semiconductor Spectrum and Optical Properties (Beijing: Science Press) (in Chinese)[沈学础 2002 半导体光谱和光学性质 (科学出版社: 北京)]

    [16]

    ]Tiwald T E, Thompson D W, Woollam J A 1998 J. Vac. Sci. Technol. B 16 312

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  • PDF下载量:  1708
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-05-19
  • 修回日期:  2009-06-17
  • 刊出日期:  2010-03-15

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