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White organic light-emitting devices (WOLEDs) have a few technical merits for lighting application. Generally, doping-concentration and carriers-transporting effect inherent in traditional WOLEDs, however, complicate the optimization of device efficiency and color-stability characteristics. In this paper, we design and fabricate a novel WOLED concept,in which an alternant yellow and blue lighting stripe structure is used. We analyze the emission characteristic of this alternate stripe WOLED (AS-WOLED) as a function of yellow and blue stripe size and lighting angle. From the comprehensive analysis, trend in the dependence of emission characteristic on device structure is extracted, and accordingly, a general method for optimizing color characteristics of AS-WOLEDs is suggested.
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Keywords:
- white light-emitting /
- color-stability /
- efficiency /
- alternatant-stripes
[1] Tang C W, Vanslyke A 1987 Appl. Phys. Lett. 51 913
[2] Cao J,Jiang X Y,Zhang Z L 2007 Acta Phys. sin. 56 3493 (in Chinese)[曹 进、蒋雪茵、张志林 2007 物理学报 56 3493]
[3] Kido J, Hongawa K, Okuyama K, Nagai K 1994 Appl. Phys. Lett. 64 815
[4] Wu X M,Hua Y L,Yin S G, Zhang G H, Hui J L,Zhang L J,Wang Y 2008 Acta Phys Sin. 57 1150 (in Chinese)[吴晓明、华玉林、印寿根、张国辉、惠娟利、王 宇 2007 物理学报 57 1150]
[5] Ma D G 2007 J. Mol. Sci. 23 224 (in Chinese)[马东阁 2007分子科学学报 23 224]
[6] Duan Y, Hou J, Wu Z, Cheng G, Zhao Y, Liu S Y 2004 Chin. Phys. Lett. 21 534
[7] Duan Y, Zhao Y, Cheng G, Jiang W L, Wu Z, Hou J Y 2004 Semicond. Sci. Technol. 19 L31
[8] Chen FP, Xu B, Zhao Z J,Tian W J, Lü P, Chan Im 2010 Chin. Phys. B 19 037801
[9] Dodabalapur A, Rothberg L, Miller T E 1994 Appl. Phys. Lett. 64 2486
[10] Duan Y, He F, Chen P, Zhao Y, Liu S Y, Ma Y G 2008 Optic. Quan. Elec. 40 57
[11] Gu G, Parthasarathy G, Tian P, Burrow P E, Forrest S R 1999 J. Appl. Phys. 86 4076
[12] Zhang Z, Jiang X, Xu S 2000 Chin. Phys. Lett. 17 534
[13] Mazzeo M, Sala F, Mariano F, Melcarne G, D'Agostino S, Duan Y, Gigli G, Cingolani R 2010 Adv. Mat.
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[1] Tang C W, Vanslyke A 1987 Appl. Phys. Lett. 51 913
[2] Cao J,Jiang X Y,Zhang Z L 2007 Acta Phys. sin. 56 3493 (in Chinese)[曹 进、蒋雪茵、张志林 2007 物理学报 56 3493]
[3] Kido J, Hongawa K, Okuyama K, Nagai K 1994 Appl. Phys. Lett. 64 815
[4] Wu X M,Hua Y L,Yin S G, Zhang G H, Hui J L,Zhang L J,Wang Y 2008 Acta Phys Sin. 57 1150 (in Chinese)[吴晓明、华玉林、印寿根、张国辉、惠娟利、王 宇 2007 物理学报 57 1150]
[5] Ma D G 2007 J. Mol. Sci. 23 224 (in Chinese)[马东阁 2007分子科学学报 23 224]
[6] Duan Y, Hou J, Wu Z, Cheng G, Zhao Y, Liu S Y 2004 Chin. Phys. Lett. 21 534
[7] Duan Y, Zhao Y, Cheng G, Jiang W L, Wu Z, Hou J Y 2004 Semicond. Sci. Technol. 19 L31
[8] Chen FP, Xu B, Zhao Z J,Tian W J, Lü P, Chan Im 2010 Chin. Phys. B 19 037801
[9] Dodabalapur A, Rothberg L, Miller T E 1994 Appl. Phys. Lett. 64 2486
[10] Duan Y, He F, Chen P, Zhao Y, Liu S Y, Ma Y G 2008 Optic. Quan. Elec. 40 57
[11] Gu G, Parthasarathy G, Tian P, Burrow P E, Forrest S R 1999 J. Appl. Phys. 86 4076
[12] Zhang Z, Jiang X, Xu S 2000 Chin. Phys. Lett. 17 534
[13] Mazzeo M, Sala F, Mariano F, Melcarne G, D'Agostino S, Duan Y, Gigli G, Cingolani R 2010 Adv. Mat.
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