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用两线法和四线法对球磨合成后热处理的Nd0.7Sr0.3MnO3陶瓷样品的电脉冲诱导电阻转变(EPIR)效应进行了测试.结果表明:在Nd0.7Sr0.3MnO3块体中用四线法测得的I-V曲线为非线性,说明Nd0.7Sr0.3MnO3样品在晶(相)界处存在空间电荷层和界面电阻.但用四线法测量EPIR效应时,没有EPIR效应发生,表明晶(相)界处的空间电荷层和肖特基势垒不能产生EPIR效应;对同一样品采用直流两线法测量,其I-V曲线也为非线性,但却发生明显的EPIR效应.说明在Nd0.7Sr0.3MnO3陶瓷中发现的EPIR效应起源于样品与电极之间的接触界面,块体内的晶(相)界处虽能产生相似I-V特性,但却不能发生EPIR效应.
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关键词:
- 电脉冲诱导电阻转变(EPIR) /
- 亚锰酸盐 /
- 空间电荷层 /
- I-V非线性
Polycrystalline ceramic Nd0.7Sr0.3MnO3 is synthesized using high-energy ball milling and post heat treatment method. The properties of electric transport are measured using direct current (DC) 4-wire and 2-wire methods. The results show that both the grain (phase) boundary and the electrode-bulk contact interface has interfacial resistance and space charge layer. The two kinds of space charge regions have greatly different effects on the DC transport: for the former, the I-V curve exhibits nonlinear characteristic and no EPIR effect takes place; for the later, however, an obvious EPIR effect is observed even if the I-V curve also shows nonlinear behaviour. It well suggests that for the ceramic Nd0.7Sr0.3MnO3, only the electrode-bulk contact interface can induce the EPIR effect although there is a similar nonlinear I-V characteristic for the grain (phase) boundary and the electrode-bulk contact interface.-
Keywords:
- EPIR /
- manganite /
- space charge layer /
- nonlinearity
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[65] -
[1] Tokura Y, Tomioka Y 2000 J. Magn. Magn. Mater. 1999 1
[2] Liu J M, Wang K F 2005 Prog. in Phys. 25 82 (in Chinese) [刘俊明、王克锋 2005 物理学进展 25 82]
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[5] [6] [7] Hu F X, Gao J, Wu X S 2005 Phys. Rev. B 72 064428
[8] [9] Chen S S, Yang C P, Deng H, Sun Z G 2008 Acta Phys. Sin. 57(6) 3798 (in Chinese) [陈顺生、杨昌平、邓 恒、孙志刚 2008 物理学报 57 3798]
[10] [11] Gao J, Hu F X 2005 J. Appl. Phys. 97 10H706
[12] [13] Yang C P, Chen S S, Dai Q, Guo D H, Wang H 2007 Acta Phys. Sin. 56 4908 (in Chinese) [杨昌平、陈顺生、戴 琪、郭定和、王 浩 2007 物理学报 56 4908].
[14] [15] Chen S S, Wang R L, Wang H, Yang C P 2010 J. Rare Earth 28 251
[16] Chen S S, Yang C P, Wang H, Medvedeva I V, Brner K 2010 Mat. Sci. Eng. B 172 167
[17] [18] Liu S Q, Wu N J, Ignative A 2000 Appl. Phys. Lett. 76 2749
[19] [20] [21] Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 85 4073
[22] Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 957
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[28] Rozenberg M J, Inoue I H, Sanchez M J 2004 Phys. Rev. Lett. 92 178302
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[33] [34] Yang R, Li M X, Yu W D, Gao X D, Shang D S, Liu X J, Cao X, Wang Q, Chen L D 2009 Appl. Phys. Lett. 95 072105
[35] [36] [37] Tan G T, Chen Z H, Zhang X Z 2005 Acta Phys. Sin. 54 0379 (in Chinese) [谈国太、陈正豪、章晓中 2005 物理学报 54 0379]
[38] [39] Venkataiah G, Krishna D C, Vithal M, Rao S S, Bhat S V, Prasad V, Subramanyam S V, Venugopal Reddy P 2005 Physic B 357 370
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[57] [58] Jiao Z K, Cao G H 2005 Magnetoelectronics (Zhejiang: Zhejiang University Press) p355 (in Chinese) [焦正宽、曹光旱 2005 磁电子学 (浙江:浙江大学出版社) 第355页]
[59] [60] [61] Chen S S, Yang C P, Ren C L, Wang R L, Wang H 2011 B.Mater.Sci. 34 1
[62] Nakamura T, Homma K, Yakashi Y, Tai R, Nishio A, Tachibana K 2007 Surf. Coat. Technol. 201 9275
[63] [64] Deng H, Yang C P, Huang C,Xu L F, Sun Z G 2010 Acta Phys. Sin. 59 7390 (in Chinese) [邓 恒、杨昌平、黄 昌、徐玲芳、孙志刚 2010 物理学报 59 7390]
[65]
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