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染料掺杂光子晶体荧光带隙边缘的激射研究

赵秋玲 吕浩 张清悦 牛东杰 王霞

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染料掺杂光子晶体荧光带隙边缘的激射研究

赵秋玲, 吕浩, 张清悦, 牛东杰, 王霞

Lasing in dye-doped photonic crystals at the edge of fluorescence band gaps

Zhao Qiu-Ling, Lü Hao, Zhang Qing-yue, Niu Dong-jie, Wang Xia
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  • 利用激光全息光刻技术, 在重铬酸盐明胶 感光材料中制备了掺杂有机染料的层状光子晶体. 在532 nm纳秒脉冲激光激励下, 样品的荧光光谱表现出良好的带隙特征; 随着抽运能量的增加, 在荧光带隙带边位置获得了激射光, 并进一步研究了光子晶体的带边位置与染料荧光峰的匹配对激射的影响.带边位置越靠近染料的荧光峰, 激射阈值越低, 反之则不易产生激射.该研究为超低阈值光子晶体激光器的发展提供了思路和方法.
    Based on holographic lithography, layered dye-doped photonic crystals are fabricated in dichromated gelatin emulsions. Under pumping of 532 nm pulse laser, fluorescence spectrums of samples show up remarkable band gaps, and lasing is achieved at the edge of fluorescence band gap with pumping energy increasing. Furthermore, the effects on lasing of matching between the edge of band gap and the peak of fluorescence are studied. Lasing threshold becomes lower as the edge of band gap is closer to the peak of fluorescence. Otherwise, it is difficult for lasing. The study provides new idea and method for the development of super low-threshold photonic crystal laser.
    • 基金项目: 国家自然科学基金(批准号:10974106,11274189)、山东省自然科学基金(批准号:JQ201018,2009ZRA02051)、山东省高等学校科技计划(批准号:J09LA10)和青岛市科技计划(批准号:11-2-4-3-(1)-jch)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 10974106, 11274189), the Natural Science Foundation of Shandong Province of China (Grant Nos. JQ201018, 2009ZRA02051), the Higher Educational Science and Technology Program of Shandong Province, China (Grant No. J09LA10), and the Science and Technology Project of Qingdao, China (Grant No. 11-2-4-3-(1)-jch).
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  • [1]

    Yablonovitch E 1987 Phys. Rev. Lett. 58 2059

    [2]

    John S 1987 Phys. Rev. Lett. 58 2486

    [3]

    Tocci M D, Bloemer M J, Scalora M, Dowling J P, Bowden C M 1995 Appl. Phys. Lett. 66 2324

    [4]

    Knight J C, Broeng J, Birks T A, Russell P S J 1998 Science 282 1476

    [5]

    Dowling J P, Scalora M, Bloemer M J, Bowden C M 1994 J. Appl. Phys. 75 1896

    [6]

    Kopp V I, Fan B, Vithana H K M, Genack A Z 1998 Opt. Lett. 23 1707

    [7]

    Matsui T, Ozaki R, Funamoto K, Ozaki M, Yoshino K 2002 Appl. Phys. Lett. 81 3741

    [8]

    Matsuhisa Y, Huang Y, Zhou Y, Wu S T, Ozaki R, Takao Y, Fujii A, Ozaki M 2007 Appl. Phys. Lett. 90 091114

    [9]

    Komikado T, Yoshida S, Umegaki S 2006 Appl. Phys. Lett. 89 061123

    [10]

    Yoon J, Lee W, Caruge J, Bawendi M, Thomas E L, Kooi S, Prasad P N 2006 Appl. Phys. Lett. 88 091102

    [11]

    Yang H, Xie P, Chan S K, Lu W X, Zhang Z Q, Sou I K, Wong G K L, Wong K S 2006 IEEE J. Quantum Electron. 42 447

    [12]

    Nagawa M, Ichikawa M, Koyama T, Shirai H, Taniguchi Y, Hongo A, Tsuji S, Nakano Y 2000 Appl. Phys. Lett. 77 2641

    [13]

    Wang X, Ng C Y, Tam W Y, Chan C T, Sheng P 2003 Adv. Mater. 15 1526

    [14]

    Wang X, Xu J, Lee J C W, Pang Y K, Tam W Y, Chan C T, Sheng P 2006 Appl. Phys. Lett. 88 051901

    [15]

    Wang X, Tam W Y 2006 Acta Phys. Sin. 55 5398 (in Chinese) [王霞, 谭永炎 2006 物理学报 55 5398]

    [16]

    L H, Zhao Q L, Zhang Q Y, Niu D J, Wang X 2012 Appl. Opt. 51 302

    [17]

    Kok M H, Lu W X, Lee J C W, Tam W Y, Wong G K L, Chen C T 2008 Appl. Phys. Lett. 92 151108

计量
  • 文章访问数:  5343
  • PDF下载量:  572
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-07-30
  • 修回日期:  2012-09-10
  • 刊出日期:  2013-02-05

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