搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

质子辐射损伤对单结GaAs/Ge太阳电池暗特性参数的影响

岳龙 吴宜勇 张延清 胡建民 孙承月 郝明明 兰慕杰

引用本文:
Citation:

质子辐射损伤对单结GaAs/Ge太阳电池暗特性参数的影响

岳龙, 吴宜勇, 张延清, 胡建民, 孙承月, 郝明明, 兰慕杰

Effect of irradiation damage on the dark electric properties of single junction GaAs/Ge solar cells

Yue Long, Wu Yi-Yong, Zhang Yan-Qing, Hu Jian-Min, Sun Cheng-Yue, Hao Ming-Ming, Lan Mu-Jie
PDF
导出引用
  • 基于p-n结暗特性双指数模型,对经质子辐射后的单结GaAs/Ge太阳电池的暗特性I-V曲线进行数值拟合,确定了单结GaAs/Ge太阳电池在辐射前后的四个暗特性特征参数,即串联电阻Rs、并联电阻Rsh、扩散电流Is1和复合电流Is2. 研究结果表明,质子辐射后单结GaAs/Ge太阳电池的Rs,Rsh,Is1和Is2四个暗特性参数均发生显著变化. 经低能质子辐射后,单结GaAs/Ge太阳电池的Rsh随位移损伤剂量的增加而减小,而Rs,Is1 和Is2三个参数随位移损伤剂量的增加而增大,其中串联电阻随位移损伤剂量线性增加而与辐射质子能量无关. 理论分析表明,上述参数的变化与质子辐射损伤区域分布有关. 基区和发射区的损伤主要引起单结电池串联电阻和扩散电流的增加;结区的损伤导致并联电阻减小,复合电流增大.
    In this paper, the dark electrical properties are studied by measuring the dark current-voltage characteristics of a type of domestic single-junction (SJ) GaAs/Ge solar cell after proton irradiation. Using a double exponential mode for the dark electrical properties of p-n junction, the dark I-V curves of the proton-irradiated SJ cells are mathematically fitted, and there are four kinds of typical parameters, namely serious resistance (Rs), parallel resistance (Rsh), diffusion current (Is1), and recombination current (Is2), which are determined to characterize the irradiation effects. Hence, four parameters such as Rs, Rsh, Is1 and Is2 are significantly changed after proton irradiation, where Rs, Rsh, Is1 increase while Rsh decreases with increasing the displacement damage dose. In addition, R_{s } increases with displacement damage dose, which is unrelated to proton energies. Theoretical analysis indicates that the above-mentioned changes of the parameters result from the damage distributions in different regions of the solar cells. Irradiation-induced damage in the base and emitter regions of the cells could induce Rs and Is1 to augment, while junction-region damage causes the Rsh to decrease but the Is2 to increase.
    • 基金项目: 国防科工局技术基础科研项目(批准号:Z1620120003)、工业和信息化部电子第五研究所发展基金青年计划专项(批准号:13F06)和工业和信息化部电子第五研究所所发展C类项目(批准号:13C05)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. Z1620120003), the Youth Foundation of The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, China (Grant No.13F06) and Class C (Grant No. 13C05).
    [1]

    Bissels G M M W, Asselbergs M A H, Bauhuis G J, Mulder P, Haverkamp E J, Vlieg E, Schermer J J 2012 Sol. Energy Mater. Sol. Cells 104 97

    [2]

    Fedoseyev, Alex, Marek Turowski, Timothy Bald, Ashok RamanJeffrey, H Warner 2013 Proceedings SPIE 8876, Nanophotonics and Macrophotonics for Space Environments VⅡ San Diego, United States, September 24, 2013, p88760W-14

    [3]

    Hu, J M, Wu Y Y, Zhang Z W, Yang D Z, He S Y 2008 Nucl. Instrum. Methods Phys. Res. B 266 3577

    [4]

    Imaizumi M, Yuri Y, Bolton P R, Sato S, Ohshima T 2012 Photovoltaic Specialists Conference, 2012 38th IEEE Astin, United States, June 3-8, 2012 p002831

    [5]

    Wu Y Y, Yue L, Hu J M, Lan M J, Xiao J D, Yang D Z, He S Y, Zhang Z W, Wang X C, Qian Y, Chen M B 2011 Acta Phys. Sin. 60 098110(in Chinese)[吴宜勇, 岳龙, 胡建民, 兰慕杰, 肖景东, 杨德庄, 何世禹, 张忠卫, 王训春, 钱勇, 陈鸣波 2011 物理学报 60 098110]

    [6]

    Anspaugh B E 1996 GaAs Solar Cell Radiation Handbook (Vol. 1) (California: JPL Publication) pp1-28

    [7]

    Gao X, Yao S S, Xue Y X, Li K, Li D M, Wang Y, Wang Y F, Feng Z Z 2009 Chin. Phys. B 18 5015

    [8]

    Xiong C, Yao R H, Geng K W 2011 Chin. Phys. B 20 057302

    [9]

    Werner J H 1988 Appl. Phys. A 47 291

    [10]

    Ortiz-Conde A, Ma Y S, Thomson J, Santos E, Liou J J, García Sánchez F J, Lei M, Finol J, Layman P 1999 Solid-State Electron. 43 845

    [11]

    Kaminski A, Marchand J J, Fave A, Laugier A 1997 Photovoltaic Specialists Conference Anaheim, United States, Sep 29-Oct 3, 1997 p203

    [12]

    Wang Q H, Lord K J, Woodyard R 2000 Photovoltaic Specialists Conference Anchorage, United States, Sep. 15-22, 2000 p1057

    [13]

    Lord K R, Walters M R, Woodyard J R 1993 Photovoltaic Specialists Conference Louisville, United States, May 10-14, 1993 p1448

    [14]

    Walters R J, Messenger S R, Cotal H L, Summers G P 1996 J. Appl. Phys. 80 4315

    [15]

    Ziegler J F, Ziegler M D, Biersack J P 2010 Nucl. Instrum. Methods Phys. Res. B 268 1818

  • [1]

    Bissels G M M W, Asselbergs M A H, Bauhuis G J, Mulder P, Haverkamp E J, Vlieg E, Schermer J J 2012 Sol. Energy Mater. Sol. Cells 104 97

    [2]

    Fedoseyev, Alex, Marek Turowski, Timothy Bald, Ashok RamanJeffrey, H Warner 2013 Proceedings SPIE 8876, Nanophotonics and Macrophotonics for Space Environments VⅡ San Diego, United States, September 24, 2013, p88760W-14

    [3]

    Hu, J M, Wu Y Y, Zhang Z W, Yang D Z, He S Y 2008 Nucl. Instrum. Methods Phys. Res. B 266 3577

    [4]

    Imaizumi M, Yuri Y, Bolton P R, Sato S, Ohshima T 2012 Photovoltaic Specialists Conference, 2012 38th IEEE Astin, United States, June 3-8, 2012 p002831

    [5]

    Wu Y Y, Yue L, Hu J M, Lan M J, Xiao J D, Yang D Z, He S Y, Zhang Z W, Wang X C, Qian Y, Chen M B 2011 Acta Phys. Sin. 60 098110(in Chinese)[吴宜勇, 岳龙, 胡建民, 兰慕杰, 肖景东, 杨德庄, 何世禹, 张忠卫, 王训春, 钱勇, 陈鸣波 2011 物理学报 60 098110]

    [6]

    Anspaugh B E 1996 GaAs Solar Cell Radiation Handbook (Vol. 1) (California: JPL Publication) pp1-28

    [7]

    Gao X, Yao S S, Xue Y X, Li K, Li D M, Wang Y, Wang Y F, Feng Z Z 2009 Chin. Phys. B 18 5015

    [8]

    Xiong C, Yao R H, Geng K W 2011 Chin. Phys. B 20 057302

    [9]

    Werner J H 1988 Appl. Phys. A 47 291

    [10]

    Ortiz-Conde A, Ma Y S, Thomson J, Santos E, Liou J J, García Sánchez F J, Lei M, Finol J, Layman P 1999 Solid-State Electron. 43 845

    [11]

    Kaminski A, Marchand J J, Fave A, Laugier A 1997 Photovoltaic Specialists Conference Anaheim, United States, Sep 29-Oct 3, 1997 p203

    [12]

    Wang Q H, Lord K J, Woodyard R 2000 Photovoltaic Specialists Conference Anchorage, United States, Sep. 15-22, 2000 p1057

    [13]

    Lord K R, Walters M R, Woodyard J R 1993 Photovoltaic Specialists Conference Louisville, United States, May 10-14, 1993 p1448

    [14]

    Walters R J, Messenger S R, Cotal H L, Summers G P 1996 J. Appl. Phys. 80 4315

    [15]

    Ziegler J F, Ziegler M D, Biersack J P 2010 Nucl. Instrum. Methods Phys. Res. B 268 1818

  • [1] 曹宇, 刘超颖, 赵耀, 那艳玲, 江崇旭, 王长刚, 周静, 于皓. 双电子传输层结构硫硒化锑太阳电池的界面特性优化. 物理学报, 2022, 71(3): 038802. doi: 10.7498/aps.71.20211525
    [2] 曹宇, 王长刚, 于皓. 双电子传输层结构硫硒化锑太阳电池的界面特性优化研究. 物理学报, 2021, (): . doi: 10.7498/aps.70.20211525
    [3] 李俊炜, 王祖军, 石成英, 薛院院, 宁浩, 徐瑞, 焦仟丽, 贾同轩. GaInP/GaAs/Ge三结太阳电池不同能量质子辐照损伤模拟. 物理学报, 2020, 69(9): 098802. doi: 10.7498/aps.69.20191878
    [4] 郑建东, 牛锦超, 钟红仙, 龚自正, 曹燕. 太阳电池阵二级轻气炮超高速撞击特性研究. 物理学报, 2019, 68(22): 220201. doi: 10.7498/aps.68.20191132
    [5] 陈培专, 于莉媛, 牛萍娟, 付贤松, 杨广华, 张建军, 侯国付. 锥形二维光子晶体太阳电池数值模拟. 物理学报, 2018, 67(2): 028802. doi: 10.7498/aps.67.20171689
    [6] 汪波, 李豫东, 郭旗, 刘昌举, 文林, 任迪远, 曾骏哲, 玛丽娅. 质子辐射下互补金属氧化物半导体有源像素传感器暗信号退化机理研究. 物理学报, 2015, 64(8): 084209. doi: 10.7498/aps.64.084209
    [7] 王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖. 非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究. 物理学报, 2013, 62(5): 058801. doi: 10.7498/aps.62.058801
    [8] 梁磊, 徐琴芳, 忽满利, 孙浩, 向光华, 周利斌. 晶体硅太阳电池表面纳米线阵列减反射特性研究. 物理学报, 2013, 62(3): 037301. doi: 10.7498/aps.62.037301
    [9] 刘伟庆, 寇东星, 胡林华, 戴松元. 染料敏化太阳电池内部光路折转对电子传输特性的影响. 物理学报, 2012, 61(16): 168201. doi: 10.7498/aps.61.168201
    [10] 徐炜炜, 胡林华, 罗向东, 刘培生, 戴松元. 基于薄膜电极溶胶修饰的染料敏化太阳电池光电特性研究. 物理学报, 2012, 61(8): 088801. doi: 10.7498/aps.61.088801
    [11] 奚小网, 胡林华, 徐炜炜, 戴松元. TiCl4处理多孔薄膜对染料敏化太阳电池中电子传输特性影响研究. 物理学报, 2011, 60(11): 118203. doi: 10.7498/aps.60.118203
    [12] 黄阳, 戴松元, 陈双宏, 胡林华, 孔凡太, 寇东星, 姜年权. 大面积染料敏化太阳电池的串联阻抗特性研究. 物理学报, 2010, 59(1): 643-648. doi: 10.7498/aps.59.643
    [13] 梁林云, 戴松元, 胡林华, 戴俊, 刘伟庆. TiO2颗粒尺寸对染料敏化太阳电池内电子输运特性影响研究. 物理学报, 2009, 58(2): 1338-1343. doi: 10.7498/aps.58.1338
    [14] 赵慧杰, 何世禹, 孙彦铮, 孙强, 肖志斌, 吕伟, 黄才勇, 肖景东, 吴宜勇. 100 keV质子辐照对空间GaAs/Ge太阳电池光电效应的影响. 物理学报, 2009, 58(1): 404-410. doi: 10.7498/aps.58.404
    [15] 金 鑫, 张晓丹, 雷志芳, 熊绍珍, 宋 峰, 赵 颖. 薄膜太阳电池用纳米上转换材料制备及其特性研究. 物理学报, 2008, 57(7): 4580-4584. doi: 10.7498/aps.57.4580
    [16] 梁林云, 戴松元, 方霞琴, 胡林华. 染料敏化太阳电池中TiO2膜内电子传输和背反应特性研究. 物理学报, 2008, 57(3): 1956-1962. doi: 10.7498/aps.57.1956
    [17] 宋慧瑾, 郑家贵, 冯良桓, 蔡 伟, 蔡亚萍, 张静全, 李 卫, 黎 兵, 武莉莉, 雷 智, 鄢 强. CdTe太阳电池的不同背电极和背接触层的特性研究. 物理学报, 2007, 56(3): 1655-1661. doi: 10.7498/aps.56.1655
    [18] 杨学文, 郑家贵, 张静全, 冯良桓, 蔡 伟, 蔡亚平, 李 卫, 黎 兵, 雷 智, 武莉莉. CdTe/CdS太阳电池I-V,C-V特性研究. 物理学报, 2006, 55(5): 2504-2507. doi: 10.7498/aps.55.2504
    [19] 胡志华, 廖显伯, 刁宏伟, 夏朝凤, 许 玲, 曾湘波, 郝会颖, 孔光临. 非晶硅太阳电池光照J-V特性的AMPS模拟. 物理学报, 2005, 54(5): 2302-2306. doi: 10.7498/aps.54.2302
    [20] 王渭源, 徐景阳, 倪企民, 谭儒环, 刘月琴, 邱月英. 砷化镓中质子注入之研究. 物理学报, 1979, 28(5): 86-95. doi: 10.7498/aps.28.86
计量
  • 文章访问数:  5855
  • PDF下载量:  787
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-05-05
  • 修回日期:  2014-05-19
  • 刊出日期:  2014-09-05

/

返回文章
返回