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2021, 70(16): 166101.
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2016, 65(16): 168501.
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Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue. Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment. Acta Physica Sinica,
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Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing. Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load. Acta Physica Sinica,
2016, 65(15): 158501.
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Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min. Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stress. Acta Physica Sinica,
2015, 64(12): 127303.
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Liu Jing, Guo Fei, Gao Yong. Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction. Acta Physica Sinica,
2014, 63(4): 048501.
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Wang Yuan, Zhang Li-Zhong, Cao Jian, Lu Guang-Yi, Jia Song, Zhang Xing. Research on electrostatic discharge characteristics of tunnel field effect transistors. Acta Physica Sinica,
2014, 63(17): 178501.
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica,
2013, 62(19): 196104.
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2013, 62(6): 068501.
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Chen Xiao-Xue, Yao Ruo-He. DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica,
2012, 61(23): 237104.
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Hong Wu, Liang Lin, Yu Yue-Hui. Two-step switching method improved turn-on characteristic in reversely switching dynistor. Acta Physica Sinica,
2012, 61(5): 058501.
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Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen. Study of zinc tin oxide thin-film transistor. Acta Physica Sinica,
2011, 60(3): 037305.
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Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang. The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse. Acta Physica Sinica,
2010, 59(11): 8118-8124.
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Yang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru, Lou Zhi-Dong. Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors. Acta Physica Sinica,
2009, 58(5): 3427-3432.
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Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Xu Na, Sun Qin-Jun, Xu Xu-Rong. Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage. Acta Physica Sinica,
2009, 58(7): 4941-4947.
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica,
2007, 56(7): 4117-4121.
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Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica,
2007, 56(2): 1105-1109.
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