DC characteristic research based on surface potential for a-Si:H thin-film transistor

Chen Xiao-Xue; Yao Ruo-He

doi:10.7498/aps.61.237104

Abstract

In this paper, based on the surface potential model, taking into account both the deep and tail state distributions simultaneously, and using the simplified Fermi-Dirac function, a unified local-state model is obtained. Using the effective characteristic temperature, the unified current-voltage (I-V) model for a-Si:H thin-film transistor a-Si:H TFT is developed. This model can describes all operating regions including subthreshold region, linear area and saturated zone through a single equation. By comparison with the experimental data, it is shown that this model can accurately describe the current voltage characteristic of the a-Si:H TFT.

Keywords:

Authors and contacts

1.
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61274085).

References

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Cited By

[1]	Rahn J T, Lemmi F, Lu J P, Mei P, Apte R B, Street R A 1999 IEEE Trans. Nucl. Sci. 46 457
[2]	Ibaraki N 1994 Mater. Res. Soc. Symp. Proc. 336 749
[3]	Shur M, Hack M 1984 J. Appl. Phys. 55 3831
[4]	Leroux T 1986 Solid-State Electronics 29 47
[5]	Chung K Y, Neudeck G W 1987 J. Appl. Phys. 62 4617
[6]	Colalongo L 2001 Solid-State Electronics 45 1525
[7]	Khakzar K, Luder E H 1992 IEEE Trans. Electron Devices 39 1428
[8]	Valdinoci M, Gnudi A, Rudan M, Fortunato G 1994 Numerical Modeling of Processes and Devices for Integrated Circuits International Workshop on Honolulu, HI, USA, June 5-6 1994 p19
[9]	Shaw J G, Hack M 1988 J. Appl. Phys. 64 4562
[10]	Chen S S, Kuo J B 1994 IEEE Trans. Electron Devices 41 1169
[11]	Shur M, Hack M, Shaw J G 1989 J. Appl. Phys. 66 3372
[12]	Liu Y, Yao R H, Li B, Deng W L 2008 J. Dis. Tech. 4 180
[13]	Hafdi Z, Aida M S 2005 Jpn. J. Appl. Phys. 44 1192

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Catalog

Vol. 61, Issue 23 - 2012-12-05

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