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The amorphous indium-gallium-zinc-oxide (a-IGZO) thin films are prepared by radio frequency magnetron sputtering at ambient temperature. The transparent thin film transistors (TFT) fabricated at low temperature (a-IGZO active channel exhibits good electrical properties with a field effect mobility of around 10 cm2·V-1·s-1, subthreshold swing of 0.4 V/decade, and high Ionoff current ratio of over 107. Hysteresis is not observed when gate voltage sweeps forward and reverses. And the dependence of white LED illumination on characteristic of a-IGZO TFT is investigated. The results show that output characteristic is hardly affected, indicating the potential of the devices for transparent electronics In particular, illumination stability is investigated under white LED illumination stress test, and the a-IGZO TFT shows only 04 V shift in threshold voltage. The negative shift can be explained on the basis of trap of interface state.
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Keywords:
- amorphous indium-gallium-zinc-oxide /
- thin film transistors /
- illumination stability /
- hysteresis
[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[2] Jeon S J, Chang J W, Choi K S, Kar J P, Lee T, Myoung J M 2010 Mat. Sci. Semicond. Proc. 13 320
[3] Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yuan Z J, Xu T N 2010 Acta Phys. Sin. 59 5018 (in Chinese) [吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健, 徐天宁 2010 物理学报 59 5018]
[4] Libsch F R, Kanicki J 1993 Appl. Phys. Lett. 62 1286
[5] Estrada M, Cerdeira A, Iniguez B 2012 Microelectron. Reliab. 52 1342
[6] Kim G H, Jeong W H, Kim H J 2010 Phys. Status Solidi A 207 1677
[7] Lee J, Park J S, Pyo Y S, Lee D B, Kim E H 2009 Appl. Phys. Lett. 95 123502
[8] Takechi K, Nakata M, Eguchi T, Yamaguchi H, Kaneko S 2009 Jpn. J. Appl. Phys. 48 011301
[9] Kim M G, Kanatzidis M, Facchetti A, Marks T 2011 Nature Mater. 10 382
[10] Kimura H U.S. Patent 0 283 762 [2009-11-19]
[11] Ito M, Kon M, Miyazaki C, Ugajin Y, Sekine N 2007 IEICE Trans. Electron. E90-C 2105
[12] Huh J Y, Seo S B, Park H S, Jeon J H, Choe H H, Lee K W, Seo J H, Ryu M K, Park S H, Hwang C S 2011 Curr. Appl. Phys. 11 S49
[13] Barquinha P, Fortunato E, Goncalves A, Pimentel A, Marques A, Pereira L, Martins R 2006 Superlatt. Microstat. 39 319
[14] Lee K H, Jung J S, Son K S, Park J S, Kim T S, Choi R, Jung J K, Kwon J Y, Koo B, Lee S 2009 Appl. Phys. Lett. 95 232106
[15] Lee H G, OH S Y, Fuller G 1982 IEEE Trans. Electron Dev. ED-29 346
[16] Park J S, Jeong J K, Mo Y G, Kim H D 2007 Appl. Phys. Lett. 90 262106
[17] Cho I T, Lee J M, Lee J H, Kwon H I 2009 Semicond. Sci. Technol. 24 015013
[18] Chen X X, Yao R H 2012 Acta Phys. Sin. 61 237105 (in Chinese) [陈晓雪, 姚若河 2012 物理学报 61 237105]
[19] Chen T C, Chang T C, Hsieh T Y, Tsai C T, Chen S C, Lin C S, Hung M C, Tu C H, Chang J J, Chen P L 2010 Appl. Phys. Lett. 97 192103
[20] Görrn P, Lehnhardt M, Riedl T, Kowalsky W 2007 Appl. Phys. Lett. 91 193504
[21] Lany S, Zunger A 2005 Phys. Rev. B 72 035215
[22] Janotti A, van de Walle C G. 2007 Phys. Rev. B 76 165202
[23] Clark S J, Robertson J, Lany S, Zunger A 2010 Phys. Rev. B 81 115311
[24] Lee W J, Ryu B, Chang K J 2009 Physica B 404 4794
[25] Chowdhury M D H, Mifliorato P, Jang J 2010 Appl. Phys. Lett. 97 173506
[26] Vygranenko Y, Wang K, Nathan A 2007 Appl. Phys. Lett. 91 263508
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[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488
[2] Jeon S J, Chang J W, Choi K S, Kar J P, Lee T, Myoung J M 2010 Mat. Sci. Semicond. Proc. 13 320
[3] Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yuan Z J, Xu T N 2010 Acta Phys. Sin. 59 5018 (in Chinese) [吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健, 徐天宁 2010 物理学报 59 5018]
[4] Libsch F R, Kanicki J 1993 Appl. Phys. Lett. 62 1286
[5] Estrada M, Cerdeira A, Iniguez B 2012 Microelectron. Reliab. 52 1342
[6] Kim G H, Jeong W H, Kim H J 2010 Phys. Status Solidi A 207 1677
[7] Lee J, Park J S, Pyo Y S, Lee D B, Kim E H 2009 Appl. Phys. Lett. 95 123502
[8] Takechi K, Nakata M, Eguchi T, Yamaguchi H, Kaneko S 2009 Jpn. J. Appl. Phys. 48 011301
[9] Kim M G, Kanatzidis M, Facchetti A, Marks T 2011 Nature Mater. 10 382
[10] Kimura H U.S. Patent 0 283 762 [2009-11-19]
[11] Ito M, Kon M, Miyazaki C, Ugajin Y, Sekine N 2007 IEICE Trans. Electron. E90-C 2105
[12] Huh J Y, Seo S B, Park H S, Jeon J H, Choe H H, Lee K W, Seo J H, Ryu M K, Park S H, Hwang C S 2011 Curr. Appl. Phys. 11 S49
[13] Barquinha P, Fortunato E, Goncalves A, Pimentel A, Marques A, Pereira L, Martins R 2006 Superlatt. Microstat. 39 319
[14] Lee K H, Jung J S, Son K S, Park J S, Kim T S, Choi R, Jung J K, Kwon J Y, Koo B, Lee S 2009 Appl. Phys. Lett. 95 232106
[15] Lee H G, OH S Y, Fuller G 1982 IEEE Trans. Electron Dev. ED-29 346
[16] Park J S, Jeong J K, Mo Y G, Kim H D 2007 Appl. Phys. Lett. 90 262106
[17] Cho I T, Lee J M, Lee J H, Kwon H I 2009 Semicond. Sci. Technol. 24 015013
[18] Chen X X, Yao R H 2012 Acta Phys. Sin. 61 237105 (in Chinese) [陈晓雪, 姚若河 2012 物理学报 61 237105]
[19] Chen T C, Chang T C, Hsieh T Y, Tsai C T, Chen S C, Lin C S, Hung M C, Tu C H, Chang J J, Chen P L 2010 Appl. Phys. Lett. 97 192103
[20] Görrn P, Lehnhardt M, Riedl T, Kowalsky W 2007 Appl. Phys. Lett. 91 193504
[21] Lany S, Zunger A 2005 Phys. Rev. B 72 035215
[22] Janotti A, van de Walle C G. 2007 Phys. Rev. B 76 165202
[23] Clark S J, Robertson J, Lany S, Zunger A 2010 Phys. Rev. B 81 115311
[24] Lee W J, Ryu B, Chang K J 2009 Physica B 404 4794
[25] Chowdhury M D H, Mifliorato P, Jang J 2010 Appl. Phys. Lett. 97 173506
[26] Vygranenko Y, Wang K, Nathan A 2007 Appl. Phys. Lett. 91 263508
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