-
Metal oxide thin film transistor has been widely used in flat panel display industry because of its low leakage current, high mobility and large area uniformity. Besides with the development of printed display technology, inkjet printing process can fabricate the customizable patterns on diverse substrates without the need for vacuum or lithography, can significantly reduce cost and has received more and more attention. In this paper, we fabricate a bottom gate bottom contact structure thin film transistor (TFT) with indium-zinc-tin-oxide (IZTO) semiconductor using inkjet printing process. The surface morphology of the printed IZTO film is modified by adjusting the solvent composition and solute concentration of the printing precursor ink. The experimental result show that the use of binary solvents can effectively overcome the coffee ring shape caused by the accumulation of solute edge during the volatilization process of a single solvent, and finally show a uniform and flat contour surface. Further increase in solute concentration is in favor of formation of convex surface topology. The reason for the formation of the flat surface of the oxide film is the balance between the inward Marangoni reflux of the solute and the outward capillary flow during volatilization. In addition, using binary solvents printed IZTO thin film transistor exhibit excellent electrical properties. The ratio of width/length=50/30 exhibit a high on-off ratio of 1.21×109,a high saturation field-effect mobility of 16.6 cm2·V-1·s-1,a low threshold voltage of 0.84 V and subthreshold swing of 0.24 V/dec. The uniform and flat active layer thin film pattern can form good contact with the source leakage electrode, and the contact resistance of TFT devices with different width-to-length ratios is less than 1000 Ω, which can achieve the basic conditions of high mobility thin film transistors prepared by inkjet printing. Therefore, using mixture solvents provides a universal and facile way to print oxide films with desired surface topology and provide a visible path for inkjet printing of high-mobility thin film transistors.
-
[1] Jing B, Xu M, Peng C, Chen L L, Zhang J H, Li X F 2022 Acta Phys. Sin. 71 138502 (in Chinese)[荆斌,徐萌,彭聪,陈龙龙,张建华,李喜峰 2022 物理学报 71 138502]
[2] Chu S, Hollberg L, Bjorkholm J E, Bolot S, Fuchs P, Knobelspies S, Temel O, Sevilla G T, Gilshtein E, Andres C, Shorubalko I, Liu Y, Troester G, Tiwari A A N, Romanyuk Y E 2019 Adv. Electron. Mater.5 1800843
[3] Song O, Rhee D, Kim J, Jeon Y, Mazánek V, Söll A, Kwon Y A, Cho J H, Kim Y H, Kang J, Sofer Z 2022 npj 2D Mater. Appl.6 64
[4] Liang K, Li D W, Ren H H, Zhao M M, Wang H, Ding M F, Xu G W, Zhao X L, Long S B, Zhu S Y, Sheng P, Li W B, Lin X, Zhu B W 2021 Nano-Micro Lett.13 164
[5] Kwon J, Baek S, Lee Y, Tokito S, Jung S 2021 Langmuir37 10692
[6] Deegan R D, Bakajin O, Dupont T F, Huber G, Nagel S R, Witten T A 1997 Nature389 827
[7] Lan L, Chen B, Peng J, Cao Y 2021 Polymer Materials Science & Engineering 37 150 (in Chinese)[兰林峰, 陈宝中, 彭俊彪, 曹镛 2021 高分子材料科学与工程 37 150]
[8] Li Y, Lan L, Gao P, He P, Dai X, Cao H, Liang L, Peng J 2019 IEEE Electron Device Lett. 40 228
[9] Ryu S O, Ha C H, Jun H Y, Ryu S O 2020 Journal of Electronic Materials49 2003
[10] Gillan L, Li S, Lahtinen J, Chang C H, Alastalo A, Leppäniemi J 2021 Adv. Mater. Interfaces 8 2100728
[11] Matavz A, Ursic U, Mocivnik J, Richter D, Humar M, Copar S, Malic B, Bobnar V 2022 J. Colloid Interface Sci. 608 1718
[12] Sun D W, Chen C H, Zhang J, Wu X M, Chen H P, Guo T L 2018 Appl. Phys. Lett.112 012102
[13] Zhu Z N, Zhang J H, Zhou Z W, Ning H L, Cai W, Wei J L, Zhou S X, Yao R H, Lu X B, Peng J B A 2019 ACS Appl. Mater. Interfaces11 5193
[14] Zhu Z N, Ning H L, Cai W, Wei J L, Zhou S X, Yao R H, Lu X B, Zhang J H, Zhou Z W, Peng J B A 2018 Langmuir34 6413
[15] Still T, Yunker P J, Yodh A G 2012 Langmuir28 4984
[16] Hu H, Zhu J, Chen M, Guo T, Li F 2018 Appl. Surf. Sci.441 295
[17] Zhong X, Duan F 2016 Eur. Phys. J. B39 18
[18] Oh G, Jeong W, Jung N, Kang S H, Weon B M 2022 Phys. Rev. Appl.17 024010
[19] Kim D, Jeong S, Park B K, Moon J 2006 Appl. Phys. Lett.89 264101
[20] Kim M G, Kim H S, Ha Y G, He J Q, Kanatzidis M G, Facchetti A, Marks T J 2010 J. Am. Chem. Soc. 132 10352
[21] Zhu L Y, Gao Y N, Zhang J H, Li X F 2015 Acta Phys. Sin. 64 168501 (in Chinese)[朱乐永, 高娅娜, 李喜峰, 张建华 2014 物理学报 64 168501]
[22] Choi S, Kim K T, Park S K, Kim Y H 2019 Materials 12 852
[23] Friederich A, Binder J R, Bauer W 2013 J. Am. Ceram. Soc.96 2093
[24] Ishizuka H, Fukai J 2018 Exp. Fluids 59 4
[25] Li Y Z, He P H, Chen S T, Lan L F, Dai X Q, Peng J B 2019 ACS Appl. Mater. Interfaces11 28052
[26] Park J, Moon J 2006 Langmuir22 3506
[27] Huang H, Hu H L, Zhu J G, Guo T L 2017 J. Electron. Mater.46 4497
[28] Sun D, Chen C, Zhang J, Wu X, Chen H, Guo T 2018 Appl. Phys. Lett. 112 1
[29] Tao H, Luo H D, Ning H L, Yao R H, Cai W, Zheng X F, Wang Y, Wang B, Cao H, Peng, J B 2021 Chin. J. Liq. Cryst. Disp. 36 663 (in Chinese)[陶洪, 罗浩德, 宁洪龙, 姚日晖, 蔡炜, 郑喜凤, 汪洋, 王铂, 曹慧, 彭俊彪 2021 液晶与显示 36 663]
[30] Chen S, Li Y, Lin Y, He P, Long T, Deng C, Chen Z, Chen G, Tao H, Lan L, Peng J 2020 Coatings 10 425
[31] Fan C L, Hsin T C, Yu X W, Lin Z C 2024 Mater. Sci. Semicond. Process. 172 1396
[32] Weber C, Oberberg M, Weber D, Bock C, Pham D V, Kunze U 2014 Adv. Mater. Interfaces 1 1400137
[33] Lin Y L, Chen S T, Wu Y B, Lan L F, Peng J B A 2021 Chin. J. Liq. Cryst. Disp. 36 1239 (in Chinese)[林奕龙,陈思婷,吴永波,兰林锋,彭俊彪 2021 液晶与显示 36 9
Metrics
- Abstract views: 150
- PDF Downloads: 8
- Cited By: 0