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Wu Shi-Man, Tao Si-Min, Ji Ai-Chuang, Guan Shao-Hang, Xiao Jian-Rong. Influence of selenization temperature on structure and optical band gap of MoSe2 thin film. Acta Physica Sinica,
2024, 73(19): 196801.
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Lü Yong-Jie, Chen Yan, Ye Fang-Cheng, Cai Li-Bin, Dai Zi-Jie, Ren Yun-Peng. Influcence of external electric field and B/N doping on the band gap of stanene. Acta Physica Sinica,
2024, 73(8): 083101.
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Deng Wen-Juan, Zhou Tian, Wang Zhuang-Fei, Wu Yue-Chuan, Peng Xin-Cun, Zou Ji-Jun. Theoretical modeling and analyzing structural characteristics of AlGaAs/GaAs negative electron affinity array cathode with optically and electrically injected variable bandgap. Acta Physica Sinica,
2022, 71(23): 237901.
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Gu Yan-Ni, Wu Xiao-Shan. Oxygen vacancy induced band gap narrowing of the low-temperature vanadium dioxide phase. Acta Physica Sinica,
2017, 66(16): 163102.
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Hou Qing-Yu, Li Wen-Cai, Zhao Chun-Wang. Effect of In–2N heavy co-doping and preferred orientation on the optical band gap and absorption spectrum of ZnO. Acta Physica Sinica,
2015, 64(6): 067101.
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Xu Zhen-Chao, Hou Qing-Yu. GGA+U study on the effects of Ag doping on the electronic structures and absorption spectra of ZnO. Acta Physica Sinica,
2015, 64(15): 157101.
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Mao Fei, Hou Qing-Yu, Zhao Chun-Wang, Guo Shao-Qiang. First-principle study on the effect of high Pr doping on the optical band gap and absorption spectra of TiO2. Acta Physica Sinica,
2014, 63(5): 057103.
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Hou Qing-Yu, Dong Hong-Ying, Ma Wen, Zhao Chun-Wang. First-principle study on the effect of high Ga doping on the optical band gap and the band-edge of optical absorption of ZnO. Acta Physica Sinica,
2013, 62(15): 157101.
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Yang Shuang-Bo. Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well. Acta Physica Sinica,
2013, 62(15): 157301.
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Luo Xiao-Dong, Di Guo-Qing. Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering. Acta Physica Sinica,
2012, 61(20): 206803.
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Hou Qing-Yu, Dong Hong-Ying, Ying Chun, Ma Wen. First-principles study on the effects of high Al doped on the band gap and absorption spectrum of ZnO. Acta Physica Sinica,
2012, 61(16): 167102.
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Yue Lei-Lei, Chen Yu, Fan Guang-Hui, He Jiao, Zhao De-Xun, Liu Ying-Kai. Influence of defect states on band gaps of the 4340 steel in epoxy in two-dimensional phononic crystal. Acta Physica Sinica,
2011, 60(10): 106103.
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Liu Fan-Yu, Liu Heng-Zhu, Liu Bi-Wei, Liang Bin, Chen Jian-Jun. Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology. Acta Physica Sinica,
2011, 60(4): 046106.
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Zhao Yan, Shi Wei-Hua, Jiang Yue-Jin. Effect of defects outside the centre on dispersive properties of photonic band gap guiding photonic crystal fibers. Acta Physica Sinica,
2010, 59(9): 6279-6283.
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Chen Sheng-Bing, Han Xiao-Yun, Yu Dian-Long, Wen Ji-Hong. Influences of different types of piezoelectric shunting circuits on band gaps of phononic beam. Acta Physica Sinica,
2010, 59(1): 387-392.
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Jiang Ai-Hua, Xiao Jian-Rong, Wang De-An. Influence of annealing on structure and optical band gap of nitrogen doping fluorinated amorphous carbon films. Acta Physica Sinica,
2008, 57(9): 6013-6017.
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Mu Zhong-Fei, Wu Fu-Gen, Zhang Xin, Zhong Hui-Lin. Effect of translation group symmetry on phononic band gaps studied by supercell calculation. Acta Physica Sinica,
2007, 56(8): 4694-4699.
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Xiao Jian-Rong, Xu Hui, Li Yan-Feng, Li Ming-Jun. Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films. Acta Physica Sinica,
2007, 56(7): 4169-4174.
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Ran Guang-Zhao, Chen Yuan, Chen Kai-Ｍao, Zhang Xiao-Lan, Liu Hong-Fei. Highly deep levels in solid C70/p-GaAs structures. Acta Physica Sinica,
2004, 53(10): 3498-3503.
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2002, 51(2): 382-388.
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