| [1] |
Zhang Jian-Wei, Niu Ying, Yan Run-Qi, Zhang Rong-Qi, Cao Meng, Li Yong-Dong, Liu Chun-Liang, Zhang Jia-Wei. Analysis of effect of bulk vacancy defect on secondary electron emission characteristics of Al2O3. Acta Physica Sinica,
2024, 73(15): 157902.
doi: 10.7498/aps.73.20240577
|
| [2] |
Li Lin, Sun Yu-Xuan, Sun Wei-Feng. First-principles study of electronic structure, magnetic and optical properties of laminated molybdenum oxides. Acta Physica Sinica,
2019, 68(5): 057101.
doi: 10.7498/aps.68.20181962
|
| [3] |
Song Qing-Gong, Wang Li-Jie, Zhu Yan-Xia, Kang Jian-Hai, Gu Wei-Feng, Wang Ming-Chao, Liu Zhi-Feng. Effects of Si and Y co-doping on stability and oxidation resistance of γ-TiAl based alloys. Acta Physica Sinica,
2019, 68(19): 196101.
doi: 10.7498/aps.68.20190490
|
| [4] |
Dong Shan, Zhang Yan-Xing, Zhang Xi-Lin, Xu Xiao-Pei, Mao Jian-Jun, Li Dong-Lin, Chen Zhi-Ming, Ma Kuan, Fan Zheng-Quan, Wei Dan-Dan, Yang Zong-Xian. The first-principles study on the interaction of Ni with the yttria-stabilized zirconia and the activity of the interface. Acta Physica Sinica,
2016, 65(6): 068201.
doi: 10.7498/aps.65.068201
|
| [5] |
Fan Hang, Wang Shan-Shan, Li Yu-Hong. Study on the electronic structure and elastic constants of uranium dioxide by first principles. Acta Physica Sinica,
2015, 64(9): 097101.
doi: 10.7498/aps.64.097101
|
| [6] |
Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua. Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica,
2014, 63(11): 118502.
doi: 10.7498/aps.63.118502
|
| [7] |
Ling Zhi-Gang, Tang Yan-Lin, Li Tao, Li Yu-Peng, Wei Xiao-Nan. Molecular structure and properties of zirconiumdioxide under the external electric field. Acta Physica Sinica,
2014, 63(2): 023102.
doi: 10.7498/aps.63.023102
|
| [8] |
Wu Jun-Bo, Tang Xin-Gui, Jia Zhen-Hua, Chen Dong-Ge, Jiang Yan-Ping, Liu Qiu-Xiang. Influences of Y- and La-dopant on the thermal conductive properties and dielectric relaxation of Al2O3-based ceramics. Acta Physica Sinica,
2012, 61(20): 207702.
doi: 10.7498/aps.61.207702
|
| [9] |
Hu Yong-Gang, Xia Feng, Xiao Jian-Zhong, Lei Chao, Li Xiang-Dong. Microstructure evolution model of zirconia solid electrolyte based on AC impedance model analysis. Acta Physica Sinica,
2012, 61(9): 098102.
doi: 10.7498/aps.61.098102
|
| [10] |
Tang Xin, Zhang Qing-Yu, Lü Hai-Feng, Pu Chun-Ying. First-principles study on the electronic structures and structural stability of Cd-doped ZnO. Acta Physica Sinica,
2011, 60(3): 037101.
doi: 10.7498/aps.60.037101
|
| [11] |
Huang Yi-Hua, Jiang Dong-Liang, Zhang Jing-Xian, Lin Qing-Ling. Spectroscopic properties and Judd-Ofelt theory analysis of La, Nd codoped Y2O3 high refractivity transparent ceramics. Acta Physica Sinica,
2010, 59(1): 300-306.
doi: 10.7498/aps.59.300
|
| [12] |
Hou Hai-Hong, Sun Xi-Lian, Shen Yan-Ming, Shao Jian-Da, Fan Zheng-Xiu, Yi Kui. Roughness and light scattering properties of ZrO2 thin films deposited by electron beam evaporation. Acta Physica Sinica,
2006, 55(6): 3124-3127.
doi: 10.7498/aps.55.3124
|
| [13] |
Liu Huang-Qing, Wang Ling-Ling, Qin Wei-Ping. Luminescence of Eu3+ Ions in nanocrystalline zirconia. Acta Physica Sinica,
2004, 53(1): 282-285.
doi: 10.7498/aps.53.282
|
| [14] |
GUOXIN. A GRAIN-BOUNDARY CONDUCTION MODEL FOR STABILIZED-ZIRCONIA. Acta Physica Sinica,
1998, 47(8): 1332-1338.
doi: 10.7498/aps.47.1332
|
| [15] |
CHENG GUANG-XU, ZHANG XING-KUI. VARYING TEMPERATURE RAMAN SCATTERING STUDIES OF 12 mol% Ce TETRAGONAL ZIRCONIA POLYCRYSTAL. Acta Physica Sinica,
1990, 39(8): 162-168.
doi: 10.7498/aps.39.162
|
| [16] |
HU WEI-MIN, MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP. Acta Physica Sinica,
1987, 36(10): 1330-1335.
doi: 10.7498/aps.36.1330
|
| [17] |
ZHU HUI-LONG, HUANG ZU-QIA. MIGRATION OF VACANCIES IN BCC METALS. Acta Physica Sinica,
1987, 36(9): 1122-1132.
doi: 10.7498/aps.36.1122
|
| [18] |
REN SHANG-YUAN, MAO DE-QIANG, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI. Acta Physica Sinica,
1986, 35(11): 1457-1464.
doi: 10.7498/aps.35.1457
|
| [19] |
MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL. Acta Physica Sinica,
1986, 35(6): 808-811.
doi: 10.7498/aps.35.808
|
| [20] |
REN SHANG-YUAN, MAO DE-QIANG, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (Ⅰ)——BASIC EQUATIONS. Acta Physica Sinica,
1985, 34(4): 455-463.
doi: 10.7498/aps.34.455
|
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