[1] |
Chen Long, Chen Cheng-Ke, Li Xiao, Hu Xiao-Jun. Effects of oxidation on silicon vacancy photoluminescence and microstructure of separated domain formed nanodiamond films. Acta Physica Sinica,
2019, 68(16): 168101.
doi: 10.7498/aps.68.20190422
|
[2] |
Wu Xue-Ke, Huang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Qin Chao-Jie. Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states. Acta Physica Sinica,
2016, 65(10): 104202.
doi: 10.7498/aps.65.104202
|
[3] |
Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai. Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica,
2015, 64(14): 148103.
doi: 10.7498/aps.64.148103
|
[4] |
Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui. Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica,
2014, 63(3): 037801.
doi: 10.7498/aps.63.037801
|
[5] |
Wang Xing-He, Zhou Yan-Huai. Photoluminescence properties of Ge-doped silica glass. Acta Physica Sinica,
2009, 58(6): 4239-4242.
doi: 10.7498/aps.58.4239
|
[6] |
Liu Chun-Ming, Fang Li-Mei, Zu Xiao-Tao. Photoluminescence and magnetic properties of cobalt doped SnO2 nano-powder. Acta Physica Sinica,
2009, 58(2): 936-940.
doi: 10.7498/aps.58.936
|
[7] |
Huang Tong-De, Jiang Ben-Xue, Wu Yu-Song, Li Jiang, Shi Yun, Liu Wen-Bin, Pan Yu-Bai, Huang Li-Ping, Guo Jing-Kun. Fabrication of Yb3+,Er3+:YAG transparent ceramics and study of its 1.5 μm fluorescence spectrum. Acta Physica Sinica,
2009, 58(2): 1298-1304.
doi: 10.7498/aps.58.1298
|
[8] |
Wang Jun-Zhuan, Shi Zhuo-Qiong, Lou Hao-Nan, Zhang Xin-Luan, Zuo Ze-Wen, Pu Lin, Ma En, Zhang Rong, Zheng You-Liao, Lu Fang, Shi Yi. Influence of Si crystallization evolution on 1.54 μm luminescence in Er-doped Si/Al2O3 multilayer. Acta Physica Sinica,
2009, 58(6): 4243-4248.
doi: 10.7498/aps.58.4243
|
[9] |
Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing. Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering. Acta Physica Sinica,
2008, 57(6): 3786-3790.
doi: 10.7498/aps.57.3786
|
[10] |
Ding Hong-Lin, Liu Kui, Wang Xiang, Fang Zhong-Hui, Huang Jian, Yu Lin-Wei, Li Wei, Huang Xin-Fan, Chen Kun-Ji. Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure. Acta Physica Sinica,
2008, 57(7): 4482-4486.
doi: 10.7498/aps.57.4482
|
[11] |
Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng. Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica,
2008, 57(6): 3661-3665.
doi: 10.7498/aps.57.3661
|
[12] |
Yao Zhi-Tao, Sun Xin-Rui, Xu Hai-Jun, Jiang Wei-Fen, Xiao Shun-Hua, Li Xin-Jian. The structure and photoluminescence properties of ZnO/silicon nanoporous pillar array. Acta Physica Sinica,
2007, 56(10): 6098-6103.
doi: 10.7498/aps.56.6098
|
[13] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica,
2007, 56(3): 1621-1626.
doi: 10.7498/aps.56.1621
|
[14] |
Wang Jiu-Min, Chen Kun-Ji, Song Jie, Yu Lin-Wei, Wu Liang-Cai, Li Wei, Huang Xin-Fan. Double-level charge storage in self-aligned doubly-stacked Si nanocrystals in SiNx dielectric. Acta Physica Sinica,
2006, 55(11): 6080-6084.
doi: 10.7498/aps.55.6080
|
[15] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
doi: 10.7498/aps.55.1407
|
[16] |
Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai. The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak. Acta Physica Sinica,
2005, 54(12): 5738-5742.
doi: 10.7498/aps.54.5738
|
[17] |
Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou. Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica,
2004, 53(4): 1236-1242.
doi: 10.7498/aps.53.1236
|
[18] |
Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica,
2003, 52(10): 2558-2562.
doi: 10.7498/aps.52.2558
|
[19] |
MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE. COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica,
2001, 50(8): 1580-1584.
doi: 10.7498/aps.50.1580
|
[20] |
LIANG JIAN-JUN, WANG YONG-QIAN, CHEN WEI-DE, WANG ZHAN-GUO, CHANG YONG. PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS SiOx(0. Acta Physica Sinica,
2000, 49(7): 1386-1389.
doi: 10.7498/aps.49.1386
|