| [1] |
Zhao Yi-Mo, Huang Zhi-Wei, Peng Ren-Miao, Xu Peng-Peng, Wu Qiang, Mao Yi-Chen, Yu Chun-Yu, Huang Wei, Wang Jian-Yuan, Chen Song-Yan, Li Cheng. Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation. Acta Physica Sinica,
2021, 70(17): 178506.
doi: 10.7498/aps.70.20210138
|
| [2] |
Yang Chu-Ping, Geng Yi-Nan, Wang Jie, Liu Xing-Nan, Shi Zhen-Gang. Breakdown voltage of high pressure helium parallel plates and effect of field emission. Acta Physica Sinica,
2021, 70(13): 135102.
doi: 10.7498/aps.70.20210086
|
| [3] |
Zhao Wen-Jing, Ding Meng-Guang, Yang Xiao-Li, Hu Hai-Yun. Nonequilibrium statistical theoretical analysis method of TDDB of gate oxide. Acta Physica Sinica,
2020, 69(10): 100502.
doi: 10.7498/aps.69.20200108
|
| [4] |
Li Ping, Xu Yu-Tang. Monte Carlo simulation of time-dependent dielectric breakdown of oxide caused by migration of oxygen vacancies. Acta Physica Sinica,
2017, 66(21): 217701.
doi: 10.7498/aps.66.217701
|
| [5] |
Yue Shan, Liu Xing-Nan, Shi Zhen-Gang. Experimental study on breakdown voltage between parallel plates in high-pressure helium. Acta Physica Sinica,
2015, 64(10): 105101.
doi: 10.7498/aps.64.105101
|
| [6] |
Liu Yu, Zhou Jin, Lin Zhi-Yong. Ramp-induced oblique detonation wave with an incoming boudary layer effect. Acta Physica Sinica,
2014, 63(20): 204701.
doi: 10.7498/aps.63.204701
|
| [7] |
Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica,
2014, 63(20): 208501.
doi: 10.7498/aps.63.208501
|
| [8] |
Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue. Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor. Acta Physica Sinica,
2010, 59(12): 8877-8882.
doi: 10.7498/aps.59.8877
|
| [9] |
Li Qi, Zhang Bo, Li Zhao-Ji. A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica,
2008, 57(3): 1891-1896.
doi: 10.7498/aps.57.1891
|
| [10] |
Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica,
2007, 56(5): 2895-2899.
doi: 10.7498/aps.56.2895
|
| [11] |
Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica,
2007, 56(5): 2900-2904.
doi: 10.7498/aps.56.2900
|
| [12] |
Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju. The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica,
2006, 55(11): 6118-6122.
doi: 10.7498/aps.55.6118
|
| [13] |
Wang Yan-Gang, Xu Ming-Zhen, Tan Chang-Hua, Duan Xiao-Rong. Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown. Acta Physica Sinica,
2005, 54(8): 3884-3888.
doi: 10.7498/aps.54.3884
|
| [14] |
Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica,
2003, 52(8): 2046-2051.
doi: 10.7498/aps.52.2046
|
| [15] |
Liu Hong-Xia, Zheng Xue-Feng, Hao Yao. . Acta Physica Sinica,
2002, 51(1): 163-166.
doi: 10.7498/aps.51.163
|
| [16] |
ZHANG JIN-CHENG, HAO YUE, ZHU ZHI-WEI. STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE. Acta Physica Sinica,
2001, 50(8): 1585-1589.
doi: 10.7498/aps.50.1585
|
| [17] |
LIU HONG-XIA, HAO YUE. STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(9): 1769-1773.
doi: 10.7498/aps.50.1769
|
| [18] |
LIU HONG-XIA, FANG JIAN-PING, HAO YUE. EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(6): 1172-1177.
doi: 10.7498/aps.50.1172
|
| [19] |
LIU HONG-XIA, HAO YUE. STUDY ON PARAMETER CHARACTERIZATION OF THIN GATE OXIDE TDDB BREAKDOWN. Acta Physica Sinica,
2000, 49(6): 1163-1167.
doi: 10.7498/aps.49.1163
|
| [20] |
LI JING-HUI, HUANG ZU-QIA, WANG CUN-YU. THE STOCHASTIC RESONANCE AND CHAOS IN THE EVOLUTION OF THE CONSEQUENT ROCK BLOCK SLOPE (INCLINED AND VERTICAL). Acta Physica Sinica,
1998, 47(3): 382-390.
doi: 10.7498/aps.47.382
|
下载:
