[1] |
Yu Sen, Xu Sheng-Rui, Tao Hong-Chang, Wang Hai-Tao, An Xia, Yang He, Xu Kang, Zhang Jin-Cheng, Hao Yue. Ion implantation induced nucleation and epitaxial growth of high-quality AlN. Acta Physica Sinica,
2024, 73(19): 196101.
doi: 10.7498/aps.73.20240674
|
[2] |
Qin Xi-Feng, Ma Gui-Jie, Shi Shu-Hua, Wang Feng-Xiang, Fu Gang, Zhao Jin-Hua. Investigation on range distribution of Er ions implanted in silicon-on-insulator. Acta Physica Sinica,
2014, 63(17): 176101.
doi: 10.7498/aps.63.176101
|
[3] |
Zhu He, Zhang Bing-Po, Wang Miao, Hu Gu-Jin, Dai Ning, Wu Hui-Zhen. Influence of high dose As ion implantation on electrical properties of high resistivity silicon. Acta Physica Sinica,
2014, 63(13): 136803.
doi: 10.7498/aps.63.136803
|
[4] |
Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting. Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica,
2013, 62(3): 037703.
doi: 10.7498/aps.62.037703
|
[5] |
Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju. Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica,
2011, 60(6): 066101.
doi: 10.7498/aps.60.066101
|
[6] |
Pan Feng, Ding Bin-Feng, Fa Tao, Cheng Feng-Feng, Zhou Sheng-Qiang, Yao Shu-De. Superparamagnetic nanoparticles formed in Fe-implanted ZnO. Acta Physica Sinica,
2011, 60(10): 108501.
doi: 10.7498/aps.60.108501
|
[7] |
Qin Xi-Feng, Wang Feng-Xiang, Liang Yi, Fu Gang, Zhao You-Mei. Investigation of the lateral spread of Er ions implanted in 6H-SiC. Acta Physica Sinica,
2010, 59(9): 6390-6393.
doi: 10.7498/aps.59.6390
|
[8] |
Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica,
2010, 59(3): 1632-1637.
doi: 10.7498/aps.59.1632
|
[9] |
Zhang Da-Cheng, Shen Yan-Yan, Huang Yuan-Jie, Wang Zhuo, Liu Chang-Long. Theoretical study of nanoparticles in insulators fabricated by metal ion implantation. Acta Physica Sinica,
2010, 59(11): 7974-7978.
doi: 10.7498/aps.59.7974
|
[10] |
Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica,
2010, 59(7): 4831-4836.
doi: 10.7498/aps.59.4831
|
[11] |
Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao. Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica,
2009, 58(10): 7108-7113.
doi: 10.7498/aps.58.7108
|
[12] |
Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng, Zhang Li-Qing. Synthesis of metallic nanoparticles in spinel via defects induced by the inert-gas-ion implantation. Acta Physica Sinica,
2009, 58(1): 399-403.
doi: 10.7498/aps.58.399
|
[13] |
Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng. A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica,
2008, 57(8): 5165-5169.
doi: 10.7498/aps.57.5165
|
[14] |
Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica,
2007, 56(8): 4930-4935.
doi: 10.7498/aps.56.4930
|
[15] |
Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
doi: 10.7498/aps.55.4353
|
[16] |
Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei. Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica,
2006, 55(4): 2073-2077.
doi: 10.7498/aps.55.2073
|
[17] |
Liu Xiang-Fei, Jiang Chang-Zhong, Ren Feng, Fu Qiang. Optical absorption, Raman spectra and TEM study of Ag nanoparticles formed by ion implantation into a-SiO2. Acta Physica Sinica,
2005, 54(10): 4633-4637.
doi: 10.7498/aps.54.4633
|
[18] |
Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Mai Yao-Hua, Gao Yan-Tao, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon. Acta Physica Sinica,
2005, 54(4): 1895-1898.
doi: 10.7498/aps.54.1895
|
[19] |
Wang Wen-Wu, Xie Er-Qing, He De-Yan. Structure and infrared absorption characterizations of yttrium silicides formed by ion beam synthesis. Acta Physica Sinica,
2003, 52(1): 233-236.
doi: 10.7498/aps.52.233
|
[20] |
Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
doi: 10.7498/aps.51.629
|