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The p-type N doped ZnO thin films are fabricated using radio-frequency magnetron sputtering technique in O-rich growth condition together with the direct N+ ion-implantation and annealing. The conductivities and Raman scattering properties of the samples are studied by Hall measurements and Raman spectra respectively. Hall measurements indicate that the optimal p-type ZnO film can be obtained when the sample is annealed at 600 ℃ for 120 min in N2 ambience, and its hole concentration is about 2.527×1017 cm-3. N+-implantation induces three additional vibrational modes in ZnO, which are located at 274.2, 506.7 and 640.4 cm-1 respectively. In the process of the annealing, by comparing the electrical properties and Raman speetra of the samples, we find that the competition between intrinsic donor defects and the activation of N acceptors plays a crucial role in the p-type formation of ZnO:N films during annealing.
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Keywords:
- O-rich ZnO /
- ion-implantation /
- p-type conductivity /
- Raman spectrum
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[18] Bundesmann C, Ashkenov N, Shubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[19] Friedrich F, Gluba M A, Nickel N H 2009 Appl. Phys. Lett. 95 141903
[20] Wang J B, Zhong H M, Li Z F, Liu W 2006 Appl. Phys. Lett. 88 101913
[21] Wang X Q, Yang S R, Wang J Z, Li M T, Jiang X Y, Du G T, Liu Y, Chang R P H 2001 J. Cryst. Growth 226 27
[22] Liu W W, Yao B, Zhang Z Z, Li Y F, Li B H, Shan C X, Zhang J Y, Shen D Z, Fan X W 2011 J. Appl. Phys. 109 093518
[23] Chen X Y, Zhang Z Z, Yao B, Jiang M M, Wang S P, Li B H, Shan C X, Liu L, Zhao D X, Zhao H F, Shen D Z 2011 J. Appl. Phys. 110 053305
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[1] Look D C 2001 Mater. Sci. Eng. B 80 383
[2] Park C H, Zhang S B, Wei S H 2002 Phys. Rev. B 66 073202
[3] Barnes T M, Olson K, Wolden C A 2005 Appl. Phys. Lett. 86 112112
[4] Lee E C, Kim Y S, Jin Y G, Chang K J 2001 Phys. Rev. B 64 058120
[5] Wang N, Kong C Y, Zhu R J, Qin G P, Dai T L, Nan M, Ruan H B 2007 Acta Phys. Sin. 56 5974 (in Chinese) [王楠, 孔春阳, 朱仁江, 秦国平, 戴特力, 南貌, 阮海波 2007 物理学报 56 5974]
[6] Ohta Y, Haga T, Abe Y 1997 Jpn. J. Appl. Phys. 36 L1040
[7] Lu J G, Liang Q N, Zhang Y Z, Ye Z Z, Fujita S Z 2007 J. Phys. D: Appl. Phys. 40 3179
[8] Li X H, Xu H Y, Zhang X T, Liu Y C, Sun J W, Lu Y M 2009 Appl. Phys. Lett. 95 191903
[9] Esmaili-Sardari S, Berkovich A, Alliadis A 2012 Appl. Phys. Lett. 100 053503
[10] Du G T, Ma Y, Zhang Y T, Yang T P 2005 Appl. Phys. Lett. 87 213103
[11] Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[12] Kumar A, Kumar M, Singh B P 2010 Opt. Commun. 283 3996
[13] Zang H, Wang Z G, Pang L L, Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B 2010 Acta Phys. Sin. 59 4832 (in Chinese) [臧航, 王志光, 庞立龙, 魏孔芳, 姚存峰, 申铁龙, 孙建荣, 马艺准, 缑洁, 盛彦斌, 朱亚滨 2010 物理学报 59 4832]
[14] Samanta K, Bhattacharya P, Katiyar R S, Lwamoto W, Pagliuso P G, Rettori C 2006 Phys. Rev. B 73 245213
[15] Asmar A R, Atanas J P, Ajaka M, Zaatar Y, Ferblantier G, Sauvajol J L, Jabbour J, Juillaget S, Foucaran A 2005 J. Cryst. Growth 279 399
[16] Zeferino R S, Flores M B, Pal U 2011 J. Appl. Phys. 109 014308
[17] Kaschner A, Haboeck U, Martin S, Matthias S, Kaczmarczyk G, Hoffmann A, Thomsen C, Zeuner Z, Alves H R, Hofmann D M, Meyer B K 2002 Appl. Phys. Lett. 80 1909
[18] Bundesmann C, Ashkenov N, Shubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[19] Friedrich F, Gluba M A, Nickel N H 2009 Appl. Phys. Lett. 95 141903
[20] Wang J B, Zhong H M, Li Z F, Liu W 2006 Appl. Phys. Lett. 88 101913
[21] Wang X Q, Yang S R, Wang J Z, Li M T, Jiang X Y, Du G T, Liu Y, Chang R P H 2001 J. Cryst. Growth 226 27
[22] Liu W W, Yao B, Zhang Z Z, Li Y F, Li B H, Shan C X, Zhang J Y, Shen D Z, Fan X W 2011 J. Appl. Phys. 109 093518
[23] Chen X Y, Zhang Z Z, Yao B, Jiang M M, Wang S P, Li B H, Shan C X, Liu L, Zhao D X, Zhao H F, Shen D Z 2011 J. Appl. Phys. 110 053305
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