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超宽禁带AlN材料具有禁带宽度大、击穿电场高、热导率高、直接带隙等优势，被广泛应用于光电子器件和电力电子器件等领域.AlN材料的质量影响着AlN基器件的性能，为此研究人员提出了多种方法来提高异质外延AlN晶体的质量，但是这些方法工艺复杂且成本高昂.因此，本文提出了诱导成核的新方法来获得高质量的AlN材料.首先，对纳米图案化的蓝宝石衬底注入不同剂量的N离子进行预处理，随后基于该衬底用金属有机化学气相沉积法外延AlN基板，并在其上生长多量子阱结构，最后基于此多量子阱结构制备紫外发光二极管.研究结果表明，在注入N离子剂量为1×1013 cm-2的衬底上外延获得的AlN基板，其表面粗糙度最小且位错密度最低.由此可见，适当剂量的N离子注入促进了AlN异质外延过程中的横向生长与合并过程；这可能是因为N离子的注入，抑制了初期成核过程中形成的扭曲的镶嵌结构，有效降低了AlN的螺位错以及刃位错密度.此外，基于该基板制备的多量子阱结构，其残余应力最小，光致发光强度提高到无注入样品的152%.此外，紫外发光二极管的光电性能大幅提高，当注入电流为100 mA时，光输出功率和电光转换效率分别提高了63.8%和61.7%.
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关键词:
- 氮化铝 /
- 离子注入 /
- 金属有机化学气相淀积 /
- 发光二极管
AlN materials are widely used in optoelectronic, power electronic, and radio frequency applications. However, the significant lattice and thermal mismatch between heteroepitaxial AlN and its substrate leads to a high threading dislocations (TDs) density, which degrades the performance of device. In this work，we introduces a novel, cost-effective, and stable approach for the epitaxial growth of AlN. We injects different doses of nitrogen ions into nano patterned sapphire substrates, followed by the deposition of an AlN layer using metal-organic chemical vapor deposition. Ultraviolet light-emitting diodes (UV-LEDs) with a luminescence wavelength of 395 nm were fabricated on it, and the optoelectronic properties were evaluated. Compared with the sample prepared by traditional method, the screw TDs density of the sample injected with N ions at a dose of 1×1013 cm-2 decreased by 82%, while having the lowest roughness and a 52% increase in photoluminescence intensity. It can be seen that appropriate doses of N ion implantation can promote the lateral growth and merging process in AlN heteroepitaxy. This is due to the process of implantation of N ions can suppress the tilt and twist of the nucleation islands, effectively reducing the density of TDs in AlN. Furthermore, in comparison to the control LED, the light output power and wall plug efficiency of the LED prepared on the high quality AlN template increased by 63.8% and 61.7%, respectively. The observed enhancement in device performance is attributed to the decreased TDs density of the epitaxial layer, which effectively reduces the nonradiative recombination centers. In summary, this study suggests that ion implantation can significantly improve the quality of epitaxial AlN, thereby facilitating the development of high-performance AlN-based UV-LEDs. -
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