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Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode. Acta Physica Sinica,
2023, 72(17): 178501.
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Wu Peng, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Investigation of AlGaN/GaN Schottky barrier diodes on free-standing GaN substrate with low leakage current. Acta Physica Sinica,
2022, 71(15): 158503.
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Chen Qian, Li Qun, Yang Ying. Effects of AlGaN interlayer on scattering mechanisms in InAlN/AlGaN/GaN heterostructures. Acta Physica Sinica,
2019, 68(1): 017301.
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Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica,
2016, 65(8): 088501.
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Wang Kai, Xing Yan-Hui, Han Jun, Zhao Kang-Kang, Guo Li-Jian, Yu Bao-Ning, Deng Xu-Guang, Fan Ya-Ming, Zhang Bao-Shun. Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica,
2016, 65(1): 016802.
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Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong. Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica,
2014, 63(8): 080202.
doi: 10.7498/aps.63.080202
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
doi: 10.7498/aps.62.157202
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Liu Hong-Xia, Gao Bo, Zhuo Qing-Qing, Wang Yong-Huai. Influence of polarization effects on photoelectric response of AlGaN/GaN heterojunction p-i-n photodetectors. Acta Physica Sinica,
2012, 61(5): 057802.
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Ding Guo-Jian, Guo Li-Wei, Xing Zhi-Gang, Chen Yao, Xu Pei-Qiang, Jia Hai-Qiang, Zhou Jun-Ming, Chen Hong. Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers. Acta Physica Sinica,
2010, 59(8): 5724-5729.
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Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue. The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica,
2009, 58(5): 3409-3415.
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Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng. Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs. Acta Physica Sinica,
2009, 58(7): 4925-4930.
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Wang Xin-Juan, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue. Analysis of structure parameters and current conduction mechanisms of AlGaN/GaN Schottky contacts. Acta Physica Sinica,
2008, 57(5): 3171-3175.
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Ni Jin-Yu, Zhang Jin-Cheng, Hao Yue, Yang Yan, Chen Hai-Feng, Gao Zhi-Yuan. Comparison of measuring methods of sheet carrier density in AlGaN/GaN heterostructures. Acta Physica Sinica,
2007, 56(11): 6629-6633.
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
doi: 10.7498/aps.55.6085
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Zhang Kai-Xiao, Chen Dun-Jun, Shen Bo, Tao Ya-Qi, Wu Xiao-Shan, Xu Jin, Zhang Rong, Zheng You-Dou. The effects of passivation and temperature on the barrier strain of Al0.22Ga0.78N/GaN heterostructures. Acta Physica Sinica,
2006, 55(3): 1402-1406.
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Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica,
2006, 55(6): 2977-2981.
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Yao Wei, Qiu Zhi-Jun, Gui Yong-Sheng, Zheng Ze-Wei, Lü Jie, Tang Ning, Shen Bo, Chu Jun-Hao. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure. Acta Physica Sinica,
2005, 54(5): 2247-2251.
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Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi. Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica,
2004, 53(7): 2320-2324.
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Zheng Ze-Wei, Shen Bo, Gui Yong-Sheng, Qiu Zhi-Jun, Tang Ning, Jiang Chun-Ping, Zhang Rong, Shi Yi, Zheng You-Dou, Guo Shao-Lin, Chu Jun-Hao. Study on the subband properties of AlxGa1-x N/GaN modulation-doped heterostructures. Acta Physica Sinica,
2004, 53(2): 596-600.
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LIU HONG-XIA, HAO YUE. STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(9): 1769-1773.
doi: 10.7498/aps.50.1769
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