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2023, 72(19): 198501.
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
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Wang Chong, Quan Si, Zhang Jin-Feng, Hao Yue, Feng Qian, Chen Jun-Feng. Simulation and experimental investigation of recessed-gate AlGaN/GaN HEMT. Acta Physica Sinica,
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2008, 57(4): 2456-2461.
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
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