Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers

Duan Bao-Xing; Yang Yin-Tang

doi:10.7498/aps.63.057302

Abstract

In order to optimize the surface electric field of AlGaN/GaN high electron mobility transistors (HEMTs), a novel AlGaN/GaN HEMT has been grown with a step AlGaN layer, made for the first time as far as we know, to improve the breakdown voltage. The discipline of the 2DEG concentration varying with the thickness of the AlGaN epitaxy layer has been applied to the new AlGaN/GaN HEMTs with AlGaN/GaN heterostructure. By thinning the AlGaN layer near the gate edge, the 2DEG concentration in the channel is made to form the low concentration region near the gate edge. New electric field peak has appeared at the corner of the step AlGaN layer. The high electric field has been decreased effectively due to the emergence of new electric field peak; this optimizes the surface electric field of the new AlGaN/GaN HEMTs. Then the breakdown voltage is improved to 640 V in the new AlGaN/GaN HEMTs with the step AlGaN layer as compared with 446 V for the conventional structure. In order to let the breakdown curve consistent with the test results, a certain concentration of the acceptor-like traps is added to the GaN buffer to capture the leaking current coming from the source electrode. Simulation results verify the causes for doping acceptor type ions to the GaN buffer, given by foreign researchers. The breakdown curves have been obtained which are consistent with the test results in this paper.

Keywords:

Authors and contacts

1.
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2014CB339900), the National Natural Science Foundation of China (Grant No. 61234006), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106076).

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[22]	Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302
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Cited By

[1]	Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri R W, Hussain M A, Dipankar Saha 2012 IEEE Electron Device Lett. 33 1690
[2]	Hidetoshi Ishida, Daisuke Shibata, Manabu Yanagihara, Yasuhiro Uemoto, Hisayoshi Matsuo, Tetsuzo Ueda, Tsuyaoshi Tanaka, Daisuke Ueda 2008 IEEE Transactions on Electron Devices 29 1087
[3]	Tongde Huang, Xueliang Zhu, Ka Ming Wong, Kei May Lau 2012 IEEE Electron Device Lett. 33 212
[4]	Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl Phy 130 093529-1
[5]	Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087
[6]	Chunhua Zhou, Qimeng Jiang, Sen Huang, Chen K J 2012 IEEE Electron Device Lett. 33 1132
[7]	Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl. Phys. 130 093529
[8]	Lee J H, Yoo J K, Kang H S, Lee J H 2012 IEEE Electron Device Lett. 33 1171
[9]	Lee H S, Daniel Piedra, Min Sun, Xiang Gao, Shiping Guo, Tomas Palacios 2012 IEEE Electron Device Lett. 33 982
[10]	Duan B X, Yang Y T 2012 Sci. China Inf. Sci. 55 473
[11]	Duan B X, Yang Y T 2012 Micro & Nano Letter 7 9
[12]	Subramaniam Arulkumaran, Takashi Egawa, Lawrence Selvaraj, Hiroyasu Ishikawa 2006 Japanese Jouranl of Applied Physics 45 L220
[13]	Benbakhti B, Rousseau M, De Jaeger J C 2007 Microelectronics Jouranl 38 7
[14]	Jha S, Jelenkovic E V, Pejovic M M, Ristic G S, Pejovic M, Tong K Y, Surya C, Bello I, Zhang W J 2009 Microelectronic Engineering 86 37
[15]	Arulkumaran S, Liu Z H, Ng G I, Cheong W C, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan C L 2007 Thin Solid Films. 515 4517
[16]	Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344
[17]	Duan B X, Zhang B, Li Z J 2006 IEEE Electron Device Lett. 27 377
[18]	Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329
[19]	Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305
[20]	Duan B X, Yang Y T 2011 IEEE TRANSACTIONS ON Electron Devices 58 2057
[21]	Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685
[22]	Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302
[23]	Duan B X, Yang Y T, Kevin J. Chen 2012 Acta Phys. Sin. 61 227302
[24]	Udrea F, Popescu A, Milne W I 1998 Electronics Letters 34 808
[25]	Smorchkova I P, Elsass C R, Ibbetson J P, Heying B, Fini P, DenBaars S P, Speck J S, Mishra U K 1999 Journal of Applied Physics 86 4520
[26]	Yifei Zhang, Smorchkova I P, Elsass C R, Stacia Keller, Ibbetson J P, Jasprit Singh 2000 Appl. Phys. Lett. 87 7981
[27]	Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 77 250
[28]	Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439
[29]	Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan-Saguy C 2001 Appl. Phys. Lett. 78 757
[30]	Webb J B, Tang H, Rolfe S, Bardwell J A 1999 Appl. Phys. Lett. 75 953
[31]	Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth. 251 481
[32]	Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra U K, Speck J S 2004 J. Vac. Sci. Technol. B 22 114

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Vol. 63, Issue 5 - 2014-03-05

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