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Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue. Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica,
2022, 71(5): 057301.
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Xu Da-Lin, Wang Yu-Qi, Li Xin-Hua, Shi Tong-Fei. Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier. Acta Physica Sinica,
2021, 70(6): 067301.
doi: 10.7498/aps.70.20201558
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Yang Chu-Ping, Geng Yi-Nan, Wang Jie, Liu Xing-Nan, Shi Zhen-Gang. Breakdown voltage of high pressure helium parallel plates and effect of field emission. Acta Physica Sinica,
2021, 70(13): 135102.
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Zhao Yi-Han, Duan Bao-Xing, Yuan Song, Lü Jian-Mei, Mei Yang. Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer. Acta Physica Sinica,
2017, 66(7): 077302.
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Cao Zhen, Duan Bao-Xing, Yuan Xiao-Ning, Yang Yin-Tang. Complete three-dimensional reduced surface field super junction lateral double-diffused metal-oxide-semiconductor field-effect transistor with semi-insulating poly silicon. Acta Physica Sinica,
2015, 64(18): 187303.
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Duan Bao-Xing, Li Chun-Lai, Ma Jian-Chong, Yuan Song, Yang Yin-Tang. New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer. Acta Physica Sinica,
2015, 64(6): 067304.
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Yue Shan, Liu Xing-Nan, Shi Zhen-Gang. Experimental study on breakdown voltage between parallel plates in high-pressure helium. Acta Physica Sinica,
2015, 64(10): 105101.
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Yuan Song, Duan Bao-Xing, Yuan Xiao-Ning, Ma Jian-Chong, Li Chun-Lai, Cao Zhen, Guo Hai-Jun, Yang Yin-Tang. Experimental research on the new Al0.25Ga0.75N/GaN HEMTs with a step AlGaN layer. Acta Physica Sinica,
2015, 64(23): 237302.
doi: 10.7498/aps.64.237302
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Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong, Zhang Wei-Hua, Dai Hong-Li. A dual-trench silicon on insulator high voltage device with an L-shaped source field plate. Acta Physica Sinica,
2014, 63(23): 237305.
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Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong. A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plate. Acta Physica Sinica,
2014, 63(10): 107302.
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Duan Bao-Xing, Cao Zhen, Yuan Song, Yuan Xiao-Ning, Yang Yin-Tang. New super junction lateral double-diffused MOSFET with electric field modulation by differently doping the buffered layer. Acta Physica Sinica,
2014, 63(24): 247301.
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Liu Wei-Li, Zou Xiao-Bing, Fu Yang-Yang, Wang Peng, Wang Xin-Xin. On-line measurement on surface electric field of insulator in vacuum based on Kerr effect. Acta Physica Sinica,
2014, 63(9): 095207.
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Duan Bao-Xing, Cao Zhen, Yuan Xiao-Ning, Yang Yin-Tang. New REBULF super junction LDMOS with the N type buffered layer. Acta Physica Sinica,
2014, 63(22): 227302.
doi: 10.7498/aps.63.227302
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Duan Bao-Xing, Yang Yin-Tang. Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica,
2014, 63(5): 057302.
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Wang Xiao-Wei, Luo Xiao-Rong, Yin Chao, Fan Yuan-Hang, Zhou Kun, Fan Ye, Cai Jin-Yong, Luo Yin-Chun, Zhang Bo, Li Zhao-Ji. Mechanism and optimal design of a high-k dielectric conduction enhancement SOI LDMOS. Acta Physica Sinica,
2013, 62(23): 237301.
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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica,
2012, 61(22): 227302.
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Huang Qian, Zhang De-Kun, Xiong Shao-Zhen, Zhao Ying, Zhang Xiao-Dan. Research on reduction of parasitic absorption caused by surface plasmon polariton. Acta Physica Sinica,
2012, 61(21): 217301.
doi: 10.7498/aps.61.217301
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Yang Yin-Tang, Geng Zhen-Hai, Duan Bao-Xing, Jia Hu-Jun, Yu Cen, Ren Li-Li. Characteristics of a SiC SBD with semi-superjunction structure. Acta Physica Sinica,
2010, 59(1): 566-570.
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Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica,
2007, 56(5): 2895-2899.
doi: 10.7498/aps.56.2895
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Zhao Yi, Wan Xing-Gong. Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process. Acta Physica Sinica,
2006, 55(6): 3003-3006.
doi: 10.7498/aps.55.3003
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