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Liu Ju, Cao Yi-Wei, Lv Quan-Jiang, Yang Tian-Peng, Mi Ting-Ting, Wang Xiao-Wen, Liu Jun-Lin. Influence of period number of superlattice electron barrier layer on the performance of AlGaN-based deep ultraviolet LED. Acta Physica Sinica,
2024, 73(12): 128503.
doi: 10.7498/aps.73.20231969
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Wu Xiao-Xu, Long Jun-Hua, Sun Qiang-Jian, Wang Xia, Chen Zhi-Tao, Yu Meng-Lu, Luo Xiao-Long, Li Xue-Fei, Zhao Hu-Yin, Lu Shu-Long. Study of flexible packing and stability of GaInP/GaAs solar cells. Acta Physica Sinica,
2023, 72(13): 138803.
doi: 10.7498/aps.72.20230352
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Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue. Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica,
2022, 71(5): 057301.
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Xu Da-Lin, Wang Yu-Qi, Li Xin-Hua, Shi Tong-Fei. Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier. Acta Physica Sinica,
2021, 70(6): 067301.
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Yang Chu-Ping, Geng Yi-Nan, Wang Jie, Liu Xing-Nan, Shi Zhen-Gang. Breakdown voltage of high pressure helium parallel plates and effect of field emission. Acta Physica Sinica,
2021, 70(13): 135102.
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Fu Min, Wen Shang-Sheng, Xia Yun-Yun, Xiang Chang-Ming, Ma Bing-Xu, Fang Fang. Failure analysis of GaN-based Light-emitting diode with hole vertical structure. Acta Physica Sinica,
2017, 66(4): 048501.
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Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng. Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica,
2015, 64(8): 086101.
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Yue Shan, Liu Xing-Nan, Shi Zhen-Gang. Experimental study on breakdown voltage between parallel plates in high-pressure helium. Acta Physica Sinica,
2015, 64(10): 105101.
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Duan Bao-Xing, Yang Yin-Tang. Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica,
2014, 63(5): 057302.
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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica,
2012, 61(22): 227302.
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Song Wei-Cai, Zhang Yong-Jin. Reliability of multi-state and multi-subsystem below stress-strength interference. Acta Physica Sinica,
2011, 60(2): 021201.
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Yang Yin-Tang, Geng Zhen-Hai, Duan Bao-Xing, Jia Hu-Jun, Yu Cen, Ren Li-Li. Characteristics of a SiC SBD with semi-superjunction structure. Acta Physica Sinica,
2010, 59(1): 566-570.
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Zhou Wen, Liu Hong-Xia. Quantitative analysis on median-time-to-fail of copper interconnect with lose object defects. Acta Physica Sinica,
2009, 58(11): 7716-7721.
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Zhang Yong-Jin, Wang Zhong-Zhi. Cumulative damage model and parameter estimate about a kind of time-sharing redundant system. Acta Physica Sinica,
2009, 58(9): 6074-6079.
doi: 10.7498/aps.58.6074
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Wang Jun, Wang Lei, Dong Ye-Min, Zou Xin, Shao Li, Li Wen-Jun, Steve Yang. Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors. Acta Physica Sinica,
2008, 57(7): 4492-4496.
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu. The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica,
2008, 57(4): 2524-2528.
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Li Qi, Li Zhao-Ji, Zhang Bo. Analytical model for the surface electrical field distribution of double RESURF device with surface implanted P-top region. Acta Physica Sinica,
2007, 56(11): 6660-6665.
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Xie Guo-Feng, He Xu-Hong, Tong Jie-Juan, Zheng Yan-Hua. Calculating physical failure probability of HTR-10’s residual heat removal system by response surface method. Acta Physica Sinica,
2007, 56(6): 3192-3197.
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Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica,
2007, 56(5): 2895-2899.
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Liu Hong-Xia, Zheng Xue-Feng, Hao Yue. Generation mechanism of stress induced leakage current in flash memory cell. Acta Physica Sinica,
2005, 54(12): 5867-5871.
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