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Liu Ju, Cao Yi-Wei, Lv Quan-Jiang, Yang Tian-Peng, Mi Ting-Ting, Wang Xiao-Wen, Liu Jun-Lin. Influence of period number of superlattice electron barrier layer on the performance of AlGaN-based deep ultraviolet LED. Acta Physica Sinica,
2024, 73(12): 128503.
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Wu Xiao-Xu, Long Jun-Hua, Sun Qiang-Jian, Wang Xia, Chen Zhi-Tao, Yu Meng-Lu, Luo Xiao-Long, Li Xue-Fei, Zhao Hu-Yin, Lu Shu-Long. Study of flexible packing and stability of GaInP/GaAs solar cells. Acta Physica Sinica,
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Jiang Xian-Wei, Dai Guang-Zhen, Lu Shi-Bin, Wang Jia-Yu, Dai Yue-Hua, Chen Jun-Ning. Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles study. Acta Physica Sinica,
2015, 64(9): 091301.
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Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng. Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica,
2015, 64(8): 086101.
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Li Ri, Wang Jian, Zhou Li-Ming, Pan Hong. The reliability analysis of using the volume averaging method to simulate the solidification process in a ingot. Acta Physica Sinica,
2014, 63(12): 128103.
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2009, 58(11): 7716-7721.
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2008, 57(4): 2524-2528.
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2008, 57(7): 3989-3995.
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Wang Jun, Wang Lei, Dong Ye-Min, Zou Xin, Shao Li, Li Wen-Jun, Steve Yang. Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors. Acta Physica Sinica,
2008, 57(7): 4492-4496.
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2007, 56(6): 3192-3197.
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2006, 55(3): 1384-1389.
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2006, 55(6): 3003-3006.
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2005, 54(12): 5867-5871.
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2003, 52(10): 2576-2579.
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