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Yuan Yong-Kai, Chen Qian, Gao Ting-Hong, Liang Yong-Chao, Xie Quan, Tian Ze-An, Zheng Quan, Lu Fei. Molecular dynamics simulations of GaAs crystal growth under different strains. Acta Physica Sinica,
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Pan Feng-Chun, Lin Xue-Ling, Wang Xu-Ming. First-principles study of strain effect on magnetic and optical properties in (Ga, Mo)Sb. Acta Physica Sinica,
2022, 71(9): 096103.
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Jiang Nan, Li Ao-Lin, Qu Shui-Xian, Gou Si, Ouyang Fang-Ping. First principles study of magnetic transition of strain induced monolayer NbSi2N4. Acta Physica Sinica,
2022, 71(20): 206303.
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Lu Qun-Lin, Yang Wei-Huang, Xiong Fei-Bing, Lin Hai-Feng, Zhuang Qin-Qin. Effect of biaxial strain on the gas-sensing of monolayer GeSe. Acta Physica Sinica,
2020, 69(19): 196801.
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Wang Xin, Li Hua, Dong Zheng-Chao, Zhong Chong-Gui. Magnetism and electronic properties of LiFeAs superconducting thin filma under two-dimensional strains effect. Acta Physica Sinica,
2019, 68(2): 027401.
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Deng Chun-Yu, Hou Shang-Lin, Lei Jing-Li, Wang Dao-Bin, Li Xiao-Xiao. Simultaneous measurement on strain and temperature via guided acoustic-wave Brillouin scattering in single mode fibers. Acta Physica Sinica,
2016, 65(24): 240702.
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Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica,
2016, 65(1): 018501.
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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica,
2015, 64(3): 038501.
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Wang Jiang-Jing, Shao Rui-Wen, Deng Qing-Song, Zheng Kun. Study on electrical transport properties of strained Si nanowires by in situ transmission electron microscope. Acta Physica Sinica,
2014, 63(11): 117303.
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Xie Jian-Feng, Cao Jue-Xian. Modulation of the band structure of layered BN film with stain. Acta Physica Sinica,
2013, 62(1): 017302.
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Wu Mu-Sheng, Xu Bo, Liu Gang, Ouyang Chu-Ying. The effect of strain on band structure of single-layer MoS2: an ab initio study. Acta Physica Sinica,
2012, 61(22): 227102.
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Huang Shi-Hao, Li Cheng, Chen Cheng-Zhao, Zheng Yuan-Yu, Lai Hong-Kai, Chen Song-Yan. The optical property of tensile-strained n-type doped Ge. Acta Physica Sinica,
2012, 61(3): 036202.
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Ren Xiao-Dong, Liu Jian-Jun, Zhang Wen-Qing. Strain effect on the intercalation potential of the layered Mn-contained lithium ion batteries cathode materials: a first principles method. Acta Physica Sinica,
2012, 61(18): 183101.
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Gu Fang, Zhang Jia-Hong, Yang Li-Juan, Gu Bin. Molecular dynamics simulation of resonance properties of strain graphene nanoribbons. Acta Physica Sinica,
2011, 60(5): 056103.
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Cui Yu-Ting, You Su-Qin, Wu Liang, Ma Yong, Chen Jing-Lan, Pan Fu-Sheng, Wu Guang-Heng. Two-step thermoelastic martensitic transformation and stress-strain characteristic of Ni53.2Mn22.6Ga24.2 single crystal. Acta Physica Sinica,
2009, 58(12): 8596-8601.
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Yao Wen-Jie, Yu Zhong-Yuan, Liu Yu-Min, Lu Peng-Fei. Effect of wire width on strain distribution and bandgap in quantum-wire nanostructures based on continuum elasticity theory. Acta Physica Sinica,
2009, 58(2): 1185-1189.
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Zhang Kai-Xiao, Chen Dun-Jun, Shen Bo, Tao Ya-Qi, Wu Xiao-Shan, Xu Jin, Zhang Rong, Zheng You-Dou. The effects of passivation and temperature on the barrier strain of Al0.22Ga0.78N/GaN heterostructures. Acta Physica Sinica,
2006, 55(3): 1402-1406.
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Liu Yu-Min, Yu Zhong-Yuan, Yang Hong-Bo, Huang Yong-Zhen. Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field. Acta Physica Sinica,
2006, 55(10): 5023-5029.
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Wang Huan-You, Cao Xiao-Ping, Jiang Yi-Min, Liu Mario. Strain and elasticity of static granular matter. Acta Physica Sinica,
2005, 54(6): 2784-2790.
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Cheng Bu-Wen, Yao Fei, Xue Chun-Lai, Zhang Jian-Guo, Li Chuan-Bo, Mao Rong-Wei, Zuo Yu-Hua, Luo Li-Ping, Wang Qi-Ming. A method to estimate the strain state of SiGe/Si by measuring the bandgap. Acta Physica Sinica,
2005, 54(9): 4350-4353.
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