Study on electrical transport properties of strained Si nanowires by in situ transmission electron microscope

Wang Jiang-Jing; Shao Rui-Wen; Deng Qing-Song; Zheng Kun

doi:10.7498/aps.63.117303

Abstract

Strain engineering in semiconductor nanostructure has been received great attention because their ultra-large elastic limit can induce a broad tuning range of the physical properties. Here, we report how the electrical transport properties of the p-type -oriented Si nanowires may be tuned by bending strain and affected by the plastic deformation in a transmission electron microscope. These freestanding nanowires were prepared from commercial silicon-on-insulator materials using the focusing ion beam technique. Results show that the conductivity of these Si nanowires is improved remarkably by bending strain when the strain is lower than 2%, while the improvement is nearly saturated when the strain approaches to 2%. The electric current will reduce a little sometimes when strain exceeds 3%, which may result from plastic events. Our experimental results may be helpful to Si strain engineering.

Keywords:

Authors and contacts

1.
Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11004004, 11374029, 11234011), the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 201214), and the Beijing Nova Program, China (Grant No. Z121103002512017).

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[38]	Svensson K, Jompol Y, Olin H, Olsson E 2003 Rev. Sci. Instrum. 74 4945
[39]	Shao R W, Zheng K, Wei B, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Nanoscale 4 4936
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[41]	Han X D, Zheng K, Zhang Y F, Zhang X N, Zhang Z, Wang Z L 2007 Adv. Mater. 19 2112
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Cited By

[1]	Zhao J, Zhang G Y, Shi D X 2013 Chin. Phys. B 22 057701
[2]	Liu Z Y, Zhang J C, Duan H T, Xue J S, Lin Z Y, Ma J C, Xue X Y, Hao Y 2011 Chin. Phys. B 20 097701
[3]	Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese)[宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 物理学报 61 057304]
[4]	Rima K, Andersonb R, Boydb D, Cardonea F, Chana K, Chenb H, Christansena S, Chua J, Jenkinsa K, Kanarskyb T, Koestera S, Leeb B H, Leea K, Mazzeob V, Mocutab A, Mocutab D, Mooneya P M, Oldigesb P, Otta J, Ronsheimb P, Roya R, Steegenb A, Yanga M, Zhub H, Ieongb M, Wonga H S P 2003 Solid-State Electronics 47 1133
[5]	Wang D, Ninomiya Masaharu, Nakamae Masahiko, Nakashima Hiroshi 2005 Appl. Phys. Lett. 86 122111
[6]	Nayak D K, Woo J C S, Park J S, Wang K L, MacWilliams, K P 1993 Appl. Phys. Lett. 62 2853
[7]	Stan G, Krylyuk S, Davydov A V, Levin I, Cook R F 2012 Nano Lett. 12 2599
[8]	Smith D A, Holmberg V C, Korgel B A 2010 ACS Nano 4 2356
[9]	Wei B, Zheng K, Ji Y, Zhang Y F, Zhang Z, Han X D 2012 Nano Lett. 12 4595
[10]	Pang C Y, Lee G Y, Kim T, Kim S M, Kim H N, Ahn S H, Suh K Y 2012 Nat. Mater. 11 795
[11]	Bai X D, Golberg D Y, Bando C, Zhi Y, Tang C C, Mitome M, Kurashima K 2007 Nano Lett. 7 632
[12]	Wang Z L, Song J H 2006 Science 312 242
[13]	Han X B, Kou L Z, Lang X L, Xia J B, Wang N, Qin R, Lu J, Xu J, Liao Z M, Zhang X Z, Shan X D, Song X F, Gao J Y, Guo W L, Yu D P 2009 Adv. Mater. 21 4937
[14]	Han X B, Kou L Z, Zhang Z Y, Zhu X L, Xu J, Liao Z M, Guo W L, Yu D P 2012 Adv. Mater. 24 4707
[15]	Xu S G, Guo W H, Du S W, Loy M M T, Wang N 2012 Nano Lett. 12 5802
[16]	Signorello G, Karg S, Björk M T 2013 Nano Lett. 13 917
[17]	Shao R W, Zheng K, Zhang Y F, Li Y J, Zhang Z, Han X D 2012 Appl. Phys. Lett. 101 233109
[18]	Wang J, Rahman A, Ghosh A, Klimeck, Lundstrom G M 2005 Appl. Phys. Lett. 86 093113
[19]	Hong K, Kim J, Lee S, Shin J K 2008 Nano Lett. 8 1335
[20]	Shiri K, Kong Y, Buin A, Anantram M P 2008 Appl. Phys. Lett. 93 073114
[21]	Sajjad R N, Alam K 2009 J. Appl. Phys. 105 044307
[22]	Jin Z, Qiao L P, Guo C, Wang J A, Liu C 2013 Acta Phys. Sin. 62 058501 (in Chinese)[靳钊, 乔丽萍, 郭晨, 王江安, 刘策 2013 物理学报 62 058501]
[23]	Zhang J H, Huang Q A, Yu H, Lei S Y 2009 Sensors 9 2746
[24]	Cao J X, Gong X G, Wu R Q 2007 Phys. Rev. B 75 233302
[25]	Leu P W, Svizhenko A, Cho K 2008 Phys. Rev. B 77 235305
[26]	Zhao L X, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 6545 (in Chinese)[赵丽霞, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 物理学报 59 6545]
[27]	Niquet Y M, Delerue C, Krzeminski C 2012 Nano Lett. 12 3545
[28]	Fishchetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[29]	Feste S F, Knoch J, Habicht S, Buca D, Zhao Q T, Mantl S 2009 Solid-state Electronics 53 1257
[30]	Toriyama T, Funai D, Sugiyama S 2003 J. Appl. Phys. 93 561
[31]	Yang Y L, Li X X 2011 Nanotech. 22 015501
[32]	Neuzil P, Wong C C, Rebound J 2010 Nano Lett. 10 1248
[33]	Lugstein A, Steinmair M, Steiger A, Kosina H, Bertagnolli E 2010 Nano Lett. 10 3204
[34]	He R H, Yang P D 2006 Nat. Nanotech. 1 42
[35]	Milne J S, Rowe A C H, Arscott S, Renner C 2010 Phys. Rev. Lett. 105 226802
[36]	Qin Y, Zhang X N, Zheng K, Li H, Han X D, Zhang Z 2008 Appl. Phys. Lett. 93 063104
[37]	Zheng K, Shao R W, Deng Q S, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Appl. Phys. Lett. 104 013111
[38]	Svensson K, Jompol Y, Olin H, Olsson E 2003 Rev. Sci. Instrum. 74 4945
[39]	Shao R W, Zheng K, Wei B, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Nanoscale 4 4936
[40]	Han X D, Zhang Y F, Zheng K, Zhang X N, Zhang Z, Hao Y J, Guo X Y, Yuan J, Wang Z L 2007 Nano Lett. 7 452
[41]	Han X D, Zheng K, Zhang Y F, Zhang X N, Zhang Z, Wang Z L 2007 Adv. Mater. 19 2112
[42]	Zheng K, Han X D, Wang L H, Zhang Y F, Yue Y H, Qin Y, Zhang X N, Zhang Z 2009 Nano Lett. 9 2471
[43]	Wang L H, Zheng K, Zhang Z, Han X D 2011 Nano Lett. 11 2382

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Vol. 63, Issue 11 - 2014-06-05

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