Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer

Duan Bao-Xing; Yang Yin-Tang; Kevin J. Chen

doi:10.7498/aps.61.247302

Abstract

In order to optimize the surface electric field of the traditional AlGaN/GaN high electron mobility transistor and improve the breakdown voltage and reliability, a new AlGaN/GaN high electron mobility transistor is proposed with the partial fixed positive charges in the Si3N4 passivation layer in this paper. The partial fixed positive charges of the Si3N4 passivation layer do not affect the polarization effect of the AlGaN/GaN heterojunction. The surface electric field tends to the uniform distribution due to the new electric field peak formed by the partial fixed positive charges, which modulates the surface electric field by applying the electric field modulation effect. The high electric fields near the gate and drain electrode decrease due to the new electric field peak. The breakdown voltage is improved from the 296V for the traditional structure to the 650V for the new structure proposed. The reliability of the device is improved due to the uniform surface electric field. The effect of the electric field modulation is explained by the horizontal and vertical electric field distribution between the Si3N4 and AlGaN interface, which provides a scientific basis for designing the new structure with the partial fixed positive charges in the Si3N4 layer. Because of the fixed positive charge compensation, the two-dimensional electron gas concentration increases, and the on-resistance decreases. So, the output current of the new structure increases compared with that of the traditional AlGaN/GaN High Electron Mobility Transistor.

Keywords:

Authors and contacts

1.
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2.
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
Funds: Project supported by the State Key Program of National Natural Science of China (Grant No. 61234006), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61106076, 61006052).

References

[1]	Chu R M, Zhou Y G, Liu J, Wang D L, Chen K J, Lau K M 2005 IEEE Transactions on Electron Devices 52 438
[2]	Anderson T J, Ren F, Covert L, Lin J, Pearton S J, Dalrymple T W, Bozada C, Fitch R C, Moser N, Bedford R G, Schimpf M 2006 J. Electronic Materials 35 675
[3]	Corrion A L, Poblenz C, Wu F, Speck J S 2008 J. Appl. Phys. 130 093529
[4]	Aubry R, Jacquet J C, Dessertenne B, Chartier E, Adam D, Cordier Y, Semond E, Massies J, Diforte M A, Romann A, Delage S L 2003 Eur. Phys. J. AP 22 77
[5]	Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344
[6]	Shreepad K, Michael S S, Grigory S 2005 Transactions on Electron Devices 52 2534
[7]	Wataru S, Masahiko K, Yoshiharu T 2005 IEEE Transactions on Electron Devices 52 106
[8]	Duan B X, Yang Y T 2012 Micro & Nano Lett. 7 9
[9]	Duan B X, Yang Y T 2012 Sci China Inf. Sci. 55 473
[10]	Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201-1
[11]	Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329
[12]	Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305
[13]	Duan B X, Yang Y T 2011 IEEE Transactions on Electron Devices 58 2057
[14]	Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685
[15]	Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087
[16]	Zhang Y F, Singh J 1999 J. Appl. Phys. 85 587
[17]	Marso M, Bernat J, Javorka P, Kordos P 2004 Appl. Phys. Lett. 85 2928
[18]	Polyakov V M, Schwierz F 2005 J. Appl. Phys. 98 023709
[19]	Wang W F, Derluyn J 2006 Japanese J. Appl. Phys. 45 L224
[20]	Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Solid State Electronics 51 130
[21]	Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439
[22]	Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan S C 2001 Appl. Phys. Lett. 78 757
[23]	Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth 251 481
[24]	Subramaniam A, Takashi E, Lawrence S, Hiroyasu I 2006 Japanese J. Appl. Phys. 45 L220
[25]	Bardwell J A, Haffouz S, McKinnon W R, Storey C, Tang H, Sproule G I, Roth D, Wang R 2007 Electrochemical and Solid-State Lett. 10 H46
[26]	Duan B X,Yang Y T, Kevin J C 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 物理学报 61 227302]

Cited By

[1]	Chu R M, Zhou Y G, Liu J, Wang D L, Chen K J, Lau K M 2005 IEEE Transactions on Electron Devices 52 438
[2]	Anderson T J, Ren F, Covert L, Lin J, Pearton S J, Dalrymple T W, Bozada C, Fitch R C, Moser N, Bedford R G, Schimpf M 2006 J. Electronic Materials 35 675
[3]	Corrion A L, Poblenz C, Wu F, Speck J S 2008 J. Appl. Phys. 130 093529
[4]	Aubry R, Jacquet J C, Dessertenne B, Chartier E, Adam D, Cordier Y, Semond E, Massies J, Diforte M A, Romann A, Delage S L 2003 Eur. Phys. J. AP 22 77
[5]	Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344
[6]	Shreepad K, Michael S S, Grigory S 2005 Transactions on Electron Devices 52 2534
[7]	Wataru S, Masahiko K, Yoshiharu T 2005 IEEE Transactions on Electron Devices 52 106
[8]	Duan B X, Yang Y T 2012 Micro & Nano Lett. 7 9
[9]	Duan B X, Yang Y T 2012 Sci China Inf. Sci. 55 473
[10]	Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201-1
[11]	Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329
[12]	Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305
[13]	Duan B X, Yang Y T 2011 IEEE Transactions on Electron Devices 58 2057
[14]	Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685
[15]	Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087
[16]	Zhang Y F, Singh J 1999 J. Appl. Phys. 85 587
[17]	Marso M, Bernat J, Javorka P, Kordos P 2004 Appl. Phys. Lett. 85 2928
[18]	Polyakov V M, Schwierz F 2005 J. Appl. Phys. 98 023709
[19]	Wang W F, Derluyn J 2006 Japanese J. Appl. Phys. 45 L224
[20]	Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Solid State Electronics 51 130
[21]	Heikman S, Keller S, DenBaars S P, Mishra U K 2002 Appl. Phys. Lett. 81 439
[22]	Tang H, Webb J B, Bardwell J A, Raymond S, Salzman J, Uzan S C 2001 Appl. Phys. Lett. 78 757
[23]	Katzer D S, Storm D F, Binari S C, Roussos J A, Shanabrook B V, Glaser E R 2003 J. Cryst. Growth 251 481
[24]	Subramaniam A, Takashi E, Lawrence S, Hiroyasu I 2006 Japanese J. Appl. Phys. 45 L220
[25]	Bardwell J A, Haffouz S, McKinnon W R, Storey C, Tang H, Sproule G I, Roth D, Wang R 2007 Electrochemical and Solid-State Lett. 10 H46
[26]	Duan B X,Yang Y T, Kevin J C 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 物理学报 61 227302]

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Vol. 61, Issue 24 - 2012-12-20

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