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Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica,
2016, 65(1): 018501.
doi: 10.7498/aps.65.018501
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Liu Wei-Feng, Song Jian-Jun. Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor. Acta Physica Sinica,
2014, 63(23): 238501.
doi: 10.7498/aps.63.238501
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Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric. Acta Physica Sinica,
2014, 63(24): 248502.
doi: 10.7498/aps.63.248502
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Jin Zhao, Qiao Li-Ping, Guo Chen, Wang Jiang-An, Richard C. Liu. Electronic conductivity effective masses along arbitrary directional channel in uniaxial strained Si(001). Acta Physica Sinica,
2013, 62(5): 058501.
doi: 10.7498/aps.62.058501
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica,
2013, 62(10): 108501.
doi: 10.7498/aps.62.108501
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo. Acta Physica Sinica,
2013, 62(15): 158502.
doi: 10.7498/aps.62.158502
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Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan. The model of valence-band dispersion for strained Ge/Si1-xGex. Acta Physica Sinica,
2012, 61(13): 137104.
doi: 10.7498/aps.61.137104
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Wang Cheng, Wang Guan-Yu, Zhang He-Ming, Song Jian-Jun, Yang Chen-Dong, Mao Yi-Fei, Li Yong-Mao, Hu Hui-Yong, Xuan Rong-Xi. Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si. Acta Physica Sinica,
2012, 61(4): 047203.
doi: 10.7498/aps.61.047203
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Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate. Acta Physica Sinica,
2012, 61(10): 107301.
doi: 10.7498/aps.61.107301
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Wang Guan-Yu, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Ma Jian-Li, Wang Xiao-Yan. Analytical dispersion relation model for conduction band of uniaxial strained Si. Acta Physica Sinica,
2012, 61(9): 097103.
doi: 10.7498/aps.61.097103
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Wang Xiao-Yan, Wang Guan-Yu. Hole scattering mechanism in tetragonal strained Si. Acta Physica Sinica,
2012, 61(5): 057304.
doi: 10.7498/aps.61.057304
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Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan. Anisotropy and isotropy of hole effective mass of strained Ge. Acta Physica Sinica,
2012, 61(23): 237102.
doi: 10.7498/aps.61.237102
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Xuan Rong-Xi, Hu Hui-Yong, Wang Guan-Yu. Densities of states of strained Si in different crystal systems. Acta Physica Sinica,
2011, 60(4): 047106.
doi: 10.7498/aps.60.047106
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Model of intrinsic carrier concentration of strained Si/(001）Si1－xGex. Acta Physica Sinica,
2010, 59(3): 2064-2067.
doi: 10.7498/aps.59.2064
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Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica,
2010, 59(11): 8131-8136.
doi: 10.7498/aps.59.8131
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Zhao Li-Xia, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Model of electronical conductivity effective mass of strained Si. Acta Physica Sinica,
2010, 59(9): 6545-6548.
doi: 10.7498/aps.59.6545
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Model of hole effective mass of strained Si1－xGex/(111)Si. Acta Physica Sinica,
2010, 59(1): 579-582.
doi: 10.7498/aps.59.579
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi. Dispersion relation model of valence band in strained Si. Acta Physica Sinica,
2008, 57(11): 7228-7232.
doi: 10.7498/aps.57.7228
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1996, 45(1): 107-112.
doi: 10.7498/aps.45.107
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