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Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica,
2016, 65(1): 018501.
doi: 10.7498/aps.65.018501
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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica,
2015, 64(3): 038501.
doi: 10.7498/aps.64.038501
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica,
2014, 63(23): 237302.
doi: 10.7498/aps.63.237302
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Liu Wei-Feng, Song Jian-Jun. Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor. Acta Physica Sinica,
2014, 63(23): 238501.
doi: 10.7498/aps.63.238501
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Jin Zhao, Qiao Li-Ping, Guo Chen, Wang Jiang-An, Richard C. Liu. Electronic conductivity effective masses along arbitrary directional channel in uniaxial strained Si(001). Acta Physica Sinica,
2013, 62(5): 058501.
doi: 10.7498/aps.62.058501
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Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan. The model of valence-band dispersion for strained Ge/Si1-xGex. Acta Physica Sinica,
2012, 61(13): 137104.
doi: 10.7498/aps.61.137104
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Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan. Anisotropy and isotropy of hole effective mass of strained Ge. Acta Physica Sinica,
2012, 61(23): 237102.
doi: 10.7498/aps.61.237102
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Wang Xiao-Yan, Zhang He-Ming, Song Jian-Jun, Ma Jian-Li, Wang Guan-Yu, An Jiu-Hua. Electron mobility of strained Si/(001)Si1- x Ge x. Acta Physica Sinica,
2011, 60(7): 077205.
doi: 10.7498/aps.60.077205
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Zhao Li-Xia, Zhang He-Ming, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Model of electronical conductivity effective mass of strained Si. Acta Physica Sinica,
2010, 59(9): 6545-6548.
doi: 10.7498/aps.59.6545
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Wu Hui-Ting, Wang Hai-Long, Jiang Li-Ming. Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dot. Acta Physica Sinica,
2009, 58(1): 465-470.
doi: 10.7498/aps.58.465
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Band structure of strained Si1-xGex. Acta Physica Sinica,
2009, 58(11): 7947-7951.
doi: 10.7498/aps.58.7947
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Song Jian-Jun, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Dai Xian-Ying. Anisotropy of hole effective mass of strained Si/(001)Si1-xGex. Acta Physica Sinica,
2009, 58(7): 4958-4961.
doi: 10.7498/aps.58.4958
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Yang Fu-Hua, Tan Jin, Zhou Cheng-Gang, Luo Hong-Bo. Ab initio studies of CiCs and CiOi defects in Si1-xGex alloys. Acta Physica Sinica,
2008, 57(2): 1109-1116.
doi: 10.7498/aps.57.1109
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi. Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica,
2008, 57(9): 5918-5922.
doi: 10.7498/aps.57.5918
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi. Dispersion relation model of valence band in strained Si. Acta Physica Sinica,
2008, 57(11): 7228-7232.
doi: 10.7498/aps.57.7228
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1997, 46(2): 370-374.
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1997, 46(10): 2010-2014.
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1996, 45(1): 107-112.
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