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Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica,
2022, 71(5): 058502.
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Xiao Wen-Bo, Liu Wei-Qing, Wu Hua-Ming, Zhang Hua-Ming. Review of Parameter extraction methods for single-diode model of solar cell. Acta Physica Sinica,
2018, 67(19): 198801.
doi: 10.7498/aps.67.20181024
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Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2015, 64(11): 118502.
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Liu Jing, Guo Fei, Gao Yong. Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction. Acta Physica Sinica,
2014, 63(4): 048501.
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Gao Xian-Kun, Yao Chuan-An, Gao Xiang-Chuan, Yu Yong-Chang. Accuracy comparison between implicit and explicit single-diode models of photovoltaic cells and modules. Acta Physica Sinica,
2014, 63(17): 178401.
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica,
2013, 62(19): 196104.
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Lu Dong, Jin Dong-Yue, Zhang Wan-Rong, Zhang Yu-Jie, Fu Qiang, Hu Rui-Xin, Gao Dong, Zhang Qing-Yuan, Huo Wen-Juan, Zhou Meng-Long, Shao Xiang-Peng. Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide temperature range. Acta Physica Sinica,
2013, 62(10): 104401.
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Zhou Shou-Li, Li Jia, Ren Hong-Liang, Wen Hao, Peng Yin-Sheng. The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor. Acta Physica Sinica,
2013, 62(17): 178501.
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Yan Guan-Hua, Yan Peng-Cheng, Hou Wei, Wu Hao. A method of abrupt change process analysis based on Logistic model and its applications. Acta Physica Sinica,
2013, 62(7): 079202.
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Si Li-Ming, Hou Ji-Xuan, Liu Yong, Lü Xin. Extraction of effective constitutive parameters of active terahertz metamaterial with negative differential resistance carbon nanotubes. Acta Physica Sinica,
2013, 62(3): 037806.
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Wang Yu-Ling, Sun Yi-Ze, Peng Le-Le, Xu Yang. Parameter extraction for photovoltaic module based on Lambert W function. Acta Physica Sinica,
2012, 61(24): 248402.
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Yang Juan, Bian Bao-Min, Peng Gang, Li Zhen-Hua. The fractal character of two-parameter pulse model for random signal. Acta Physica Sinica,
2011, 60(1): 010508.
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Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun. Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2011, 60(4): 044402.
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica,
2011, 60(1): 017303.
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Wang Fa-Qiang, Zhang Hao, Ma Xi-Kui, Li Xiu-Ming. Analysis of medium-frequency oscillation in the Boost power factor correction converter with average current mode control. Acta Physica Sinica,
2009, 58(10): 6838-6844.
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Cheng Xing-Hua, Tang Long-Gu, Chen Zhi-Tao, Gong Min, Yu Tong-Jun, Zhang Guo-Yi, Shi Rui-Ying. A genetic algorithm research on Lorentz oscillator model in infrared spectra of GaMnN. Acta Physica Sinica,
2008, 57(9): 5875-5880.
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Meng Fan-Yi, Wu Qun, Wu Jian. Design and modeling for 1.7—2.7 GHz broad-band left-handed material with miniaturized unit cell and its characterization. Acta Physica Sinica,
2006, 55(5): 2194-2199.
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Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica,
2006, 55(7): 3617-3621.
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Liu Hai-Wen, Sun Xiao-Wei, Cheng Zhi-Qun, Che Yan-Feng, Li Zheng-Fan. A novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model. Acta Physica Sinica,
2003, 52(9): 2298-2303.
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1999, 48(3): 556-560.
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