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We report on the magnetic field (up to 53 T) dependence of photoluminescence (PL) spectra occurring as a spacially direct optical transition of the ZnSe layer in undoped ZnSe/BeTe/ZnSe type-II quantum structures at a low temperature (4.2 K). With magnetic field increasing, the PL intensity (IX) of exciton (X) shows an oscillation feature opposite to the PL intensity (IX－) of charged exciton (X－). As IX- increases, IX decreases, but as IX－ decreases, IX increases. In all fields, the oscillation behaviour shows a periodic change approximately with magnetic field interval. The results are attributed to the periodic resonance of the Fermi level with the Landau level, which results in the modulation of the density of states of the 2DEG system at the Fermi energy.
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Keywords:
- luminescence /
- two-dimensional electron gas /
- charged exciton /
- type-Ⅱ quantum well
[1] Song Y X, Zhang W M, Liu J, Chu N N, Li S M 2009 Acta Phys. Sin. 58 6471 (in Chinese ) [宋迎新、郑卫民、刘 静、初宁宁、李素梅 2009 物理学报 58 6471]
[2] Cai C F, Wu H Z, Si J X, Sun Y, Dai N 2009 Acta Phys. Sin. 58 3560 (in Chinese ) [蔡春锋、吴惠桢、斯剑霄、孙 艳、戴 宁 2009 物理学报 58 3560]
[3] Ji Z W, Lu Y, Chen J X, Mino H, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 1214 (in Chinese)[冀子武、鲁 云、陈锦祥、三野弘文、秋本良一、嶽山正二郎 2008 物理学报 57 1214]
[4] Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[5] Ji Z W, Yamamoto H, Mino H, Akimoto R, Takeyama S 2004 Physica E 22 632
[6] Ji Z W, Mino H, Kojima E, Akimoto R, Takeyama S 2008 Acta Phys. Sin.57 3260 (in Chinese )[冀子武、三野弘文、小映二、秋本良一、嶽山正二郎 2008 物理学报 57 3260]
[7] Ji Z W, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 6609 (in Chinese)[冀子武、三野弘文、音贤一、室清文、秋本良一、嶽山正二郎 2008 物理学报 57 6609]
[8] Mino H, Fujikawa A, Akimoto R, Takeyama S 2004 Physica E 22 640
[9] Ji Z W, Takeyama S, Mino H, Oto K, Muro K, Akimoto R 2008 Appl. Phys. Lett. 92 093107
[10] Ji Z W, Mino H, Oto K, Akimoto R 2009 Semicond. Sci. Technol. 24 095016
[11] Maksimov A. A, Tartakovskii I I, Yakovlev D R, Bayer M, Waag A 2006 JETP Lett. 83 141
[12] Haetty J, Lee E H, Luo H, Petrou A, Warnock J 1998 Solid State Commun. 108 205
[13] Manassen A, Cohen E, Ron Arza, Linder E, Pfeiffer L N 1996 Phys. Rev. B 54 10609
[14] Homburg O, Sebald K, Michler P, Gutowski J, Wenisch H, Hommel D 2000 Phys. Rev. B 62 7413
[15] Ji Z W, Enya Y, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2006 J. Phys: Conf. Seri. 51 427
[16] Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[17] Enyal Y H 2007 Graduate School of Engineering Faculty of Engneering, the University of Tokyo Master Paper p116(in Chinese)[塩谷陽平 2007 東京大学大学院工学系研究科物理工学专攻硕士论文 p116]
[18] Lematre A, Testelin C, Rigaux C, Wojtowicz T, Karczewski G 2000 Phys. Rev. B 62 5059
[19] Yamashita K, Kita T, Matsuura Y, Wada O, Geng C, Scholz F, Schweizer H, Oe K 2002 Phys. Rev. B 66 195317
[20] Nomura S, Nakanishi T, Aoyagi Y 2001 Phys. Rev. B 63 165330
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[1] Song Y X, Zhang W M, Liu J, Chu N N, Li S M 2009 Acta Phys. Sin. 58 6471 (in Chinese ) [宋迎新、郑卫民、刘 静、初宁宁、李素梅 2009 物理学报 58 6471]
[2] Cai C F, Wu H Z, Si J X, Sun Y, Dai N 2009 Acta Phys. Sin. 58 3560 (in Chinese ) [蔡春锋、吴惠桢、斯剑霄、孙 艳、戴 宁 2009 物理学报 58 3560]
[3] Ji Z W, Lu Y, Chen J X, Mino H, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 1214 (in Chinese)[冀子武、鲁 云、陈锦祥、三野弘文、秋本良一、嶽山正二郎 2008 物理学报 57 1214]
[4] Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[5] Ji Z W, Yamamoto H, Mino H, Akimoto R, Takeyama S 2004 Physica E 22 632
[6] Ji Z W, Mino H, Kojima E, Akimoto R, Takeyama S 2008 Acta Phys. Sin.57 3260 (in Chinese )[冀子武、三野弘文、小映二、秋本良一、嶽山正二郎 2008 物理学报 57 3260]
[7] Ji Z W, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2008 Acta Phys. Sin. 57 6609 (in Chinese)[冀子武、三野弘文、音贤一、室清文、秋本良一、嶽山正二郎 2008 物理学报 57 6609]
[8] Mino H, Fujikawa A, Akimoto R, Takeyama S 2004 Physica E 22 640
[9] Ji Z W, Takeyama S, Mino H, Oto K, Muro K, Akimoto R 2008 Appl. Phys. Lett. 92 093107
[10] Ji Z W, Mino H, Oto K, Akimoto R 2009 Semicond. Sci. Technol. 24 095016
[11] Maksimov A. A, Tartakovskii I I, Yakovlev D R, Bayer M, Waag A 2006 JETP Lett. 83 141
[12] Haetty J, Lee E H, Luo H, Petrou A, Warnock J 1998 Solid State Commun. 108 205
[13] Manassen A, Cohen E, Ron Arza, Linder E, Pfeiffer L N 1996 Phys. Rev. B 54 10609
[14] Homburg O, Sebald K, Michler P, Gutowski J, Wenisch H, Hommel D 2000 Phys. Rev. B 62 7413
[15] Ji Z W, Enya Y, Mino H, Oto K, Muro K, Akimoto R, Takeyama S 2006 J. Phys: Conf. Seri. 51 427
[16] Ji Z W, Mino H, Oto K, Akimoto R, Ono K, Takeyama S 2006 Semicond. Sci. Technol. 21 87
[17] Enyal Y H 2007 Graduate School of Engineering Faculty of Engneering, the University of Tokyo Master Paper p116(in Chinese)[塩谷陽平 2007 東京大学大学院工学系研究科物理工学专攻硕士论文 p116]
[18] Lematre A, Testelin C, Rigaux C, Wojtowicz T, Karczewski G 2000 Phys. Rev. B 62 5059
[19] Yamashita K, Kita T, Matsuura Y, Wada O, Geng C, Scholz F, Schweizer H, Oe K 2002 Phys. Rev. B 66 195317
[20] Nomura S, Nakanishi T, Aoyagi Y 2001 Phys. Rev. B 63 165330
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