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The Si+ self-ion-implanted and annealing experiments are conducted on the Si film based on the silicon-on-insulator wafers. The photoluminescence (PL) spectroscopy is used to investigate the luminescence properties of these Si film samples. Plentiful optical structures are observed in the PL spectra, including the D1, D2, D3, X, and the sharp W lines. By comparing the normalized PL intensities recorded by the same spectral experiments, we obtain the optimum self-ion-implanted and thermal annealing parameters. In addition, the defect origins and optical properties of the series of the D peaks and W line are well discussed.
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Keywords:
- SOI structure /
- self-ion-implantation /
- W line emission /
- near-infrared light emission device
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[2] Ding J N, Wu J X, Yuan N Y, Kan B, Chen X S 2010 Chin. Phys. B 19 077103
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[5] [6] [7] Ng W L, Lourenco M A, Shao G, Homewood K P 2001 Nature 410 192
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[22] [23] Bao J M, Yu N F, Capasso F, Belyanin A 2007 Appl. Phys. Lett. 91 131103
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[38] [39] Yang Y, Wang C, Yang R D, Xiong F, Bao J M 2009 Chin. Phys. B 18 4906
[40] [41] Wang C, Yang Y, Yang R D, Li L, Xiong F. Bao J M 2011 Chin. Phys. B 20 026802
[42] [43] Leong D, Harry M, Reeson K J, Homewood K P 1997 Nature 387 686
[44] [45] Yu X, Seifert W, Vyvenko O F, Reiche M 2008 Appl. Phys. Lett. 93 041108
[46] Sauer R, Weber J, Stolz J, Weber E R, Alexander H 1985 Appl. Phys. A 36 1
[47] [48] [49] Tkachev V D, Mudryi A V 1977 Inst. Phys. Conf. Ser. 31 231
[50] Davies G, Lightowlers E C, Ciechanowska 1987 J. Phys. C 20 191
[51] [52] [53] Jones C R, Coutinho J, Briddon P R 2005 Phys. Rev. B 72 155208
[54] [55] Pierreux D, Stetsmans A 2005 Phys. Rev. B 71 115204
[56] Davice G 1989 Phys. Rep. 176 83
[57] [58] [59] Giri P K, Coffa S, Rimini E 2001 App. Phys. Lett. 78 291
[60] [61] Schutz P J, Thompson T D, Eillman R G 1992 Appl. Phys. Lett. 60 59
[62] [63] Bao J M, Charnvanichborikarn S, Yang Y, Tabball M, Shin B, Williams J S, Aziz M J, Capasso F 2008 Proc. SPIE 6800 68000T
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[1] Park J H, Gu L, Maltzahn G, Bhatia S N, Sailor M J 2009 Nat. Mater. 8 331
[2] Ding J N, Wu J X, Yuan N Y, Kan B, Chen X S 2010 Chin. Phys. B 19 077103
[3] [4] Cloutier S G, Kossyrev P A, Xu J M 2005 Nat. Mater. 4 887
[5] [6] [7] Ng W L, Lourenco M A, Shao G, Homewood K P 2001 Nature 410 192
[8] Geis M W, Spector S J, Grein M E, Schulein R T, Yoon J U, Lennon D M 2007 IEEE Photon. Tech. Lett. 19 152
[9] [10] [11] Yang Y, Bao J M, Wang C, Aziz M J 2010 J. Appl. Phys. 107 123109
[12] Davies G, Hayama S, Murin L Sengupta A, Karpenko A 2006 Phys. Rev. B 73 165202
[13] [14] Nakamura M, Nagai S 2002 Phys. Rev. B 66 155204
[15] [16] [17] Nakamura M, Nagai S 2003 Appl. Phys. Lett. 94 3075
[18] [19] Tyschenko I E, Talochkin A B, Bagaev E M, Cherkov A G, Popov V P, Yankov R A 2007 J. Appl. Phys. 102 074312
[20] [21] He J H, Wu W W, Lee S W, Chen L J, Chueh Y L, Chou L J 2005 Appl. Phys. Lett. 86 263109
[22] [23] Bao J M, Yu N F, Capasso F, Belyanin A 2007 Appl. Phys. Lett. 91 131103
[24] Recht D, Capasso F, Aziz M J 2009 Appl. Phys. Lett. 94 251113
[25] [26] [27] Bao J M, Tabbal M, Kim T, Aziz M J, Capasso F 2007 Opt. Express 15 6728
[28] Sveinbjornsson E O, Weber J 1996 Appl. Phys. Lett. 69 2686
[29] [30] [31] Lourenco M A, Homewood K P 2005 Appl. Phys. Lett. 87 201105
[32] Coomer B J, Goss J P, Jones R, Oberg S, Broddon P R 2001 J. Phys.: Condens. Matter 13 L1
[33] [34] [35] Giri P K 2005 Semicond. Sci. Technol. 20 638
[36] [37] Brger N, Thonke K, Sauer R, Pensl G 1984 Phys. Rev. Lett. 52 1645
[38] [39] Yang Y, Wang C, Yang R D, Xiong F, Bao J M 2009 Chin. Phys. B 18 4906
[40] [41] Wang C, Yang Y, Yang R D, Li L, Xiong F. Bao J M 2011 Chin. Phys. B 20 026802
[42] [43] Leong D, Harry M, Reeson K J, Homewood K P 1997 Nature 387 686
[44] [45] Yu X, Seifert W, Vyvenko O F, Reiche M 2008 Appl. Phys. Lett. 93 041108
[46] Sauer R, Weber J, Stolz J, Weber E R, Alexander H 1985 Appl. Phys. A 36 1
[47] [48] [49] Tkachev V D, Mudryi A V 1977 Inst. Phys. Conf. Ser. 31 231
[50] Davies G, Lightowlers E C, Ciechanowska 1987 J. Phys. C 20 191
[51] [52] [53] Jones C R, Coutinho J, Briddon P R 2005 Phys. Rev. B 72 155208
[54] [55] Pierreux D, Stetsmans A 2005 Phys. Rev. B 71 115204
[56] Davice G 1989 Phys. Rep. 176 83
[57] [58] [59] Giri P K, Coffa S, Rimini E 2001 App. Phys. Lett. 78 291
[60] [61] Schutz P J, Thompson T D, Eillman R G 1992 Appl. Phys. Lett. 60 59
[62] [63] Bao J M, Charnvanichborikarn S, Yang Y, Tabball M, Shin B, Williams J S, Aziz M J, Capasso F 2008 Proc. SPIE 6800 68000T
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