[1] |
Yu Sen, Xu Sheng-Rui, Tao Hong-Chang, Wang Hai-Tao, An Xia, Yang He, Xu Kang, Zhang Jin-Cheng, Hao Yue. Ion implantation induced nucleation and epitaxial growth of high-quality AlN. Acta Physica Sinica,
2024, 73(19): 196101.
doi: 10.7498/aps.73.20240674
|
[2] |
Jiang Xing-Dong, Guan Xing-Yin, Huang Juan-Juan, Fan Xiao-Long, Xue De-Sheng. Recovering in-plane six-fold magnetic symmetry of epitaxial Fe films by N+ implantation. Acta Physica Sinica,
2019, 68(12): 126102.
doi: 10.7498/aps.68.20190131
|
[3] |
Liu Jie, Wang Lu, Sun Ling, Wang Wen-Qi, Wu Hai-Yan, Jiang Yang, Ma Zi-Guang, Wang Wen-Xin, Jia Hai-Qiang, Chen Hong. Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector. Acta Physica Sinica,
2018, 67(12): 128101.
doi: 10.7498/aps.67.20180588
|
[4] |
Zhang Zeng-Xing, Li Dong. Novel p-n junctions based on ambipolar two-dimensional crystals. Acta Physica Sinica,
2017, 66(21): 217302.
doi: 10.7498/aps.66.217302
|
[5] |
Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting. Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica,
2013, 62(3): 037703.
doi: 10.7498/aps.62.037703
|
[6] |
Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting. Effects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO: Mn thin film. Acta Physica Sinica,
2012, 61(16): 168101.
doi: 10.7498/aps.61.168101
|
[7] |
Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica,
2010, 59(7): 4831-4836.
doi: 10.7498/aps.59.4831
|
[8] |
Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao. Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica,
2009, 58(10): 7108-7113.
doi: 10.7498/aps.58.7108
|
[9] |
Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica,
2007, 56(8): 4930-4935.
doi: 10.7498/aps.56.4930
|
[10] |
Wang Nan, Kong Chun-Yang, Zhu Ren-Jiang, Qin Guo-Ping, Dai Te-Li, Nan Mao, Ruan Hai-Bo. Preparation and characteristics research of p-type ZnO films. Acta Physica Sinica,
2007, 56(10): 5974-5978.
doi: 10.7498/aps.56.5974
|
[11] |
Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
doi: 10.7498/aps.55.4353
|
[12] |
Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei. Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica,
2006, 55(4): 2073-2077.
doi: 10.7498/aps.55.2073
|
[13] |
Hou Juan, Zheng Yu-Feng, Dong You-Zhong, Kuang Dai-Hong, Sun Yan-Fei, Li Qiang. Investigation on the crystal structure, optical and electrical properties of Er3+ implanted CdTe thin film. Acta Physica Sinica,
2006, 55(12): 6684-6690.
doi: 10.7498/aps.55.6684
|
[14] |
Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica,
2006, 55(10): 5487-5493.
doi: 10.7498/aps.55.5487
|
[15] |
Man Bao-Yuan, Zhang Yun-Hai, Lü Guo-Hua, Liu Ai-Hua, Zhang Qing-Gang, Guzman L., Adami M., Miotello A.. Study on surface modification of polytetrafluoroethylene by N+ ion implantation. Acta Physica Sinica,
2005, 54(2): 837-841.
doi: 10.7498/aps.54.837
|
[16] |
Fang Zhi-Jun, Xia Yi-Ben, Wang Lin-Jun, Zhang Wei-Li, Ma Zhe-Guo, Zhang Ming-Long. Study of the stress observed in diamond films on carbon-implanted alumina surfaces. Acta Physica Sinica,
2003, 52(4): 1028-1033.
doi: 10.7498/aps.52.1028
|
[17] |
Chen Gui-Bin, Li Zhi-Feng, Cai Wei-Ying, He Li, Hu Xiao-Ning, Lu Wei, Shen Xue-Chu. Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe. Acta Physica Sinica,
2003, 52(6): 1496-1499.
doi: 10.7498/aps.52.1496
|
[18] |
Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
doi: 10.7498/aps.51.629
|
[19] |
Liu Xue-Qin, Wang Yin-Yue, Zhen Cong-Mian, Zhang Jing, Yang Ying-Hu, Guo Yong-Ping. . Acta Physica Sinica,
2002, 51(10): 2340-2343.
doi: 10.7498/aps.51.2340
|
[20] |
Li Xiao-Na, Nie Dong, Dong Chuang, Ma Teng-Cai, Jin Xing, Zhang Zhe. . Acta Physica Sinica,
2002, 51(1): 115-124.
doi: 10.7498/aps.51.115
|