Characteristics of the photovoltaic device with nanohole array antireflection coating layer

Wang Ning; Zhu Yong; Wei Wei; Chen Jian-Jun; Li Ping; Wen Yu-Mei

doi:10.7498/aps.61.038801

Abstract

The optical characteristic of the nanohole array film is analyzed by using rigorous coupled wave, and the nanohole array film is proposed to serve as photovoltaic device anti-reflection film to improve the device absorption and efficiency. According to theoretical analysis, nanohole array anti-reflection film has a better anti-reflection effect than the monofilm and can better enhance the photovoltaic device's efficiency, especially in a speetral range of 400 nm600 nm; the optimal period of the nanohole array is 500 nm, the optimal filling factor of the nanohole array is 0.2 and the optimal thickness of the nanohole array is 110 nm. In order to testify the optical effect of nanohole array, the nanohole arrays of different sizes are made by the micro-nano processing technology in the anti-reflection film of the 200 m Si Detector, and a relevant experimental system is set up. With the optimized nanohole arrays, the short circuit currents of the experimental sample are increased ～6% in a 4001100 nm spectral range, especially, increased ～15% in a 400 nm-600 nm spectral range.

Keywords:

Authors and contacts

1.
Key Laboratory for Optoelectronic Technology and System, Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Funds: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 50830202) and the National Natural Science Foundation of China (Grant No. 60707010).

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Cited By

[1]	Catchpole K R, Polman A 2008 Opt. Express 16 21793
[2]	Walheim S, Schäffer E, Mlynek J, Steiner U 1999 Science 283 520
[3]	Stupca M, Alsalhi M, AlSaud T. Almuhanna A, Nayfeh M H 2007Appl. Phys. Lett. 91 063107
[4]	Zhang H X, Gu Y, Gong Q H 2008 Chin. Phys. B 17 2567
[5]	Pillai S, Catchpole K R, Trupke T, Green M A 2007 J. Appl. Phys.101 093105
[6]	Song Y M, Yu J S, Lee Y T 2010 Opt. Lett. 35 276
[7]	Han T, Meng F Y, Zhang S, Wang J Q, Cheng X M 2011 ActaPhys. Sin. 60 027303 (in Chinese) [韩涛,孟凡英,张松,汪建强,程雪梅 2011 物理学报 60 027303]
[8]	Hu L, Chen G 2007 Nano Lett. 7 3249
[9]	Han S E, Chen G 2010 Nano Lett. 10 1012
[10]	Her T H, Finlay R J, Wu C 1998 Appl. Phys. Lett. 73 1673
[11]	Mei H, Wang C, Yao J 2011 Opt. Commun. 284 1072
[12]	Zhao H J, Yang S L, Zhang D, Liang K Y, Cheng Z F, Shi D P2009 Acta Phys. Sin. 58 6236 (in Chinese) [赵华君,赵守良,张东,梁康有,程正富,石东平 2009 物理学报 58 6236]
[13]	Kong W J, Yun M J, Sun X, Liu J H, Fan Z X, Shao J D 2008 ActaPhys. Sin. 57 4904 (in Chinese) [孔伟金,云茂金,孙欣,刘均海,范正修,劭建达 2008 物理学报 57 4904]
[14]	Yu W X, Lu Z W, Wang P 2001 Acta Photon. Sin. 30 331(inChinese) [鱼卫星,卢振武,王鹏 2001 光子学报 30 331]
[15]	Zhou C H, Wang L, Nie Y, Wang Z H 2002 Acta Phys. Sin. 51 68(in Chinese) [周传宏,王磊,聂娅, 王植恒 2002 物理学报 51 68]
[16]	Yu W X, Lu Z W, Wang P 2001 Acta Optica Sin. 30 331(in Chinese) [鱼卫星,卢振武,王鹏 2001 光学学报 21 980]
[17]	Yu Y Q 1999 Concise Course of Electrodynamics (Beijing: PekingUniversity Press) p12 (in Chinese) [俞允强 1999 电动力学简明教程(北京: 北京大学出版社) 第12页]
[18]	Palik E D 1985 Handbook of Optical Constants of Solids (3rd Ed)(Orlando, FL:Academic) p531
[19]	Feng N N, Michel J, Zeng L 2007 IEEE Trans. Electron Dev. 541926
[20]	Yang G G 2008 Micro-Optics and System (Zhejiang: ZhejiangUniversity Press) p82 (in Chinese) [杨国光 2008 微光学与系统(杭州: 浙江大学出版社) 第82页]
[21]	Ni X Y 2007 Preparation of Nano-Material (Beijing: ChemicalIndustry Press) p97 (in Chinese) [倪星元 2007 纳米材料制备技术(北京: 化学工业出版社) 第97页]

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Vol. 61, Issue 3 - 2012-02-05

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