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The corona discharge process in low pressure N2 in stepped impedance transformer (SIT) is simulated using 3-D particle-in-cell (PIC) software (VORPAL). The evolution of the charged particle spatial distribution during the discharge is obtained. The two main discharge mechanisms, i.e., multipactor and corona discharge, are analyzed. From the simulation results, it can be found that the threshold voltage of breakdown of the SIT first decreases and then increases. In addition, with the increase of the pressure, the multipactor effect weakens while the corona discharge effect strengthens. Through the comparison of the threshold voltages between two kinds of wall materials, i.e., Ag and Cu, the critical pressures between the two discharge mechanisms are achieved.
[1] Oraizi H 1996 IEEE Trans. Microwave Theory Tech. 44 389
[2] Rasch J, Anderson D, Lisak M, Semenov V E, Puech J 2009 J. Phys. D: Appl. Phys. 42 055210
[3] Frigui K, Baillargeat D, Verdeyme S, Bila S, Catherinot A, Puech J, Pacaud D 2008 IEEE Trans. Microwave Theory Tech. 56 3072
[4] Sorolla E, Mattes M 2010 Microwave Rev 16 41
[5] Ortega T P, Monge J, Marini S, Sanz J, Sorolla E, Mattes M, Vicente M, Gil J, Boria V E, Gimeno B 2010 IEEE Microwave Compon. Lett. 20 214
[6] Wang R, Zhang N, Li Y, Cui W Z 2011 2011 International Conference on Electronics, Communications and Control (ICECC) Ningbo, China, September 9, 2011 p4517
[7] Frigui K, Baillargeat D, Verdeyme S, Bila S, Catherinot A, Puech J, Pacaud D, Herren J J 2008 2008 IEEE MTT-S International Microwave Symposium Digest Limoges, France, June 15, 2008 p735
[8] Rodney J, Vaughan M 1988 IEEE Trans. Electron Devices 35 1172
[9] Udiljak R 2007 Multipactor in Low Pressure Gas and in Nonuniform RF Field Structures (Sweden: Chalmers University of Technology)
[10] Nieter C, Cary J R 2004 J. Comput. Phys. 196 448
[11] Furman M A, Pivi M 2002 Phys. Rev. ST Accel. Beams 5 124404
[12] Raju G G 2006 Gaseous Electronics-Theory and Practice (1st Ed) (Florida: CRC Press) p230
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[1] Oraizi H 1996 IEEE Trans. Microwave Theory Tech. 44 389
[2] Rasch J, Anderson D, Lisak M, Semenov V E, Puech J 2009 J. Phys. D: Appl. Phys. 42 055210
[3] Frigui K, Baillargeat D, Verdeyme S, Bila S, Catherinot A, Puech J, Pacaud D 2008 IEEE Trans. Microwave Theory Tech. 56 3072
[4] Sorolla E, Mattes M 2010 Microwave Rev 16 41
[5] Ortega T P, Monge J, Marini S, Sanz J, Sorolla E, Mattes M, Vicente M, Gil J, Boria V E, Gimeno B 2010 IEEE Microwave Compon. Lett. 20 214
[6] Wang R, Zhang N, Li Y, Cui W Z 2011 2011 International Conference on Electronics, Communications and Control (ICECC) Ningbo, China, September 9, 2011 p4517
[7] Frigui K, Baillargeat D, Verdeyme S, Bila S, Catherinot A, Puech J, Pacaud D, Herren J J 2008 2008 IEEE MTT-S International Microwave Symposium Digest Limoges, France, June 15, 2008 p735
[8] Rodney J, Vaughan M 1988 IEEE Trans. Electron Devices 35 1172
[9] Udiljak R 2007 Multipactor in Low Pressure Gas and in Nonuniform RF Field Structures (Sweden: Chalmers University of Technology)
[10] Nieter C, Cary J R 2004 J. Comput. Phys. 196 448
[11] Furman M A, Pivi M 2002 Phys. Rev. ST Accel. Beams 5 124404
[12] Raju G G 2006 Gaseous Electronics-Theory and Practice (1st Ed) (Florida: CRC Press) p230
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