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ZnO thin films with good visible emissions were deposited on Al2O3 substrates by pulsed laser deposition and subsequently annealed at different temperatures in oxygen ambient. The visible emission property of the films varied significantly with different annealing temperatures. The resistivity, carrier concentration and mobility of the films showed certain rules. From the results of X-ray diffraction, scanning electron microscope, photoluminescence and Hall measurements, the mechanism of visible emission and the reason of showing n-type conductivity in native ZnO thin films were analyzed in this paper.
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Keywords:
- ZnO thin films /
- visible emission /
- n-type conductivity
[1] Choi Y S, Kang J W, Hwang D K, Park S J 2010 IEEE T. Electron. 57 2641
[2] Qin J M, Tian L F, Zhao D X, Jiang D Y, Cao J M, Ding M, Guo Z 2011 Acta Phys. Sin. 60 113 (in Chinese) [秦杰明, 田立飞, 赵东旭, 蒋大勇, 曹建明, 丁梦, 郭振 2011 物理学报 60 113]
[3] Kashiwaba Y, Sugawara K, Haga K 2002 Thin Solid Films 411 8790
[4] Ko H J, Chen Y F, Zhu Z 2000 Appl. Phys. Lett. 76 19051907
[5] Natsume Y, Sakata H 2000 Thin Solid Films 372 3036
[6] Tsoutsouva M G, Panagopoulos C N, Papadimitriou D, Fasaki I, Kompitsas M 2011 Mater. Sci. Eng. B-Adv. Funct. Solid-state Mater. 176 480483
[7] Bentes L, Ayouchi R, Santos C, Schwarz R, Sanguino P, Conde O, Peres M, Monteiro T, Teodoro O 2007 Superlattice. Microst. 42 152157
[8] Ttipathi S, Choudhary R J, Tripathi A, Baranwal V, Pandey A C, Gerlach J W, Dar C, Kanjilal D 2008 Nucl. Instrum. Meth. B 266 15331536
[9] McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 0711017
[10] Kuo F L, Lin M T, Mensah B A, Scharf T W, Shepherd N D 2010 Phys. Status Solidi A-Appl. Mater. Sci. 207 24872491
[11] Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 0535165
[12] Sardari S E, Iliadis A A, Stamataki M, Tsamakis D, Konofaos N 2010 Solid-state Electron. 54 11501154
[13] Look D C, Farlow G C, Reunchan P, Limpijumnong S, Zhang S B, Nordlund K 2005 Phys. Rev. Lett. 95 22550222
[14] Zhu B L, Zhao X Z, Su F H, Li G H, Wu X G, Wu J, Wu R 2010 Vacuum 84 12801286
[15] Fernandez-Hevia D, de Frutos J, Caballero A C, Fernandez J F 2003 Appl. Phys. Lett. 83 26922694
[16] Ye J D, Gu S L, Qin F, Zhu S M, Liu S M, Zhou X, Liu W, Hu L Q, Zhang R, Shi Y, Zheng Y D 2005 Appl. Phys. A: Mater. Sci. Process. 81 759762
[17] Liu J, Zhao Y, Jiang Y J, Liu Y L 2010 Chin. Phys. B 19 0878018
[18] Wang J, Du G T, Zhang Y T, Zhao B J, Yang X T, Liu D L 2004 J. Cryst. Growth 263 269272
[19] Heo Y W, Norton D P, Pearton S J 2005 J. Appl. Phys. 98 0735027
[20] Clatot J, Campet G, Zeinert A, Labrugere C, Rougier A 2011 Appl. Surf. Sci. 257 51815184
[21] Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phy. D-Appl. Phys. 45 19510419
[22] Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 12650112
[23] Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 16520216
[24] Janotti A, Van de Walle C G 2005 Appl. Phys. Lett. 87 12210212
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[1] Choi Y S, Kang J W, Hwang D K, Park S J 2010 IEEE T. Electron. 57 2641
[2] Qin J M, Tian L F, Zhao D X, Jiang D Y, Cao J M, Ding M, Guo Z 2011 Acta Phys. Sin. 60 113 (in Chinese) [秦杰明, 田立飞, 赵东旭, 蒋大勇, 曹建明, 丁梦, 郭振 2011 物理学报 60 113]
[3] Kashiwaba Y, Sugawara K, Haga K 2002 Thin Solid Films 411 8790
[4] Ko H J, Chen Y F, Zhu Z 2000 Appl. Phys. Lett. 76 19051907
[5] Natsume Y, Sakata H 2000 Thin Solid Films 372 3036
[6] Tsoutsouva M G, Panagopoulos C N, Papadimitriou D, Fasaki I, Kompitsas M 2011 Mater. Sci. Eng. B-Adv. Funct. Solid-state Mater. 176 480483
[7] Bentes L, Ayouchi R, Santos C, Schwarz R, Sanguino P, Conde O, Peres M, Monteiro T, Teodoro O 2007 Superlattice. Microst. 42 152157
[8] Ttipathi S, Choudhary R J, Tripathi A, Baranwal V, Pandey A C, Gerlach J W, Dar C, Kanjilal D 2008 Nucl. Instrum. Meth. B 266 15331536
[9] McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 0711017
[10] Kuo F L, Lin M T, Mensah B A, Scharf T W, Shepherd N D 2010 Phys. Status Solidi A-Appl. Mater. Sci. 207 24872491
[11] Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 0535165
[12] Sardari S E, Iliadis A A, Stamataki M, Tsamakis D, Konofaos N 2010 Solid-state Electron. 54 11501154
[13] Look D C, Farlow G C, Reunchan P, Limpijumnong S, Zhang S B, Nordlund K 2005 Phys. Rev. Lett. 95 22550222
[14] Zhu B L, Zhao X Z, Su F H, Li G H, Wu X G, Wu J, Wu R 2010 Vacuum 84 12801286
[15] Fernandez-Hevia D, de Frutos J, Caballero A C, Fernandez J F 2003 Appl. Phys. Lett. 83 26922694
[16] Ye J D, Gu S L, Qin F, Zhu S M, Liu S M, Zhou X, Liu W, Hu L Q, Zhang R, Shi Y, Zheng Y D 2005 Appl. Phys. A: Mater. Sci. Process. 81 759762
[17] Liu J, Zhao Y, Jiang Y J, Liu Y L 2010 Chin. Phys. B 19 0878018
[18] Wang J, Du G T, Zhang Y T, Zhao B J, Yang X T, Liu D L 2004 J. Cryst. Growth 263 269272
[19] Heo Y W, Norton D P, Pearton S J 2005 J. Appl. Phys. 98 0735027
[20] Clatot J, Campet G, Zeinert A, Labrugere C, Rougier A 2011 Appl. Surf. Sci. 257 51815184
[21] Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phy. D-Appl. Phys. 45 19510419
[22] Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 12650112
[23] Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 16520216
[24] Janotti A, Van de Walle C G 2005 Appl. Phys. Lett. 87 12210212
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