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Ga掺杂对ZnO纳米结构可见光发射的抑制效应

沈庆鹤 高志伟 丁怀义 张光辉 潘楠 王晓平

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Ga掺杂对ZnO纳米结构可见光发射的抑制效应

沈庆鹤, 高志伟, 丁怀义, 张光辉, 潘楠, 王晓平

Suppression of visible light emission of ZnO nanostructures by Ga-doping

Shen Qing-He, Gao Zhi-Wei, Ding Huai-Yi, Zhang Guang-Hui, Pan Nan, Wang Xiao-Ping
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  • 采用碳热还原反应和原位掺杂的方法制备了不同Ga掺杂浓度的ZnO纳米结构. X射线衍射 显示掺杂纳米结构中为单一的氧化锌纤锌矿结构. 扫描电子显微镜 观测发现随掺杂浓度的增大, 纳米结构的形貌逐渐从纳米六棱柱变为纳米锥.光致发光 和X射线光电子能谱 测量分别发现随着掺杂浓度升高, 纳米结构的可见发光强度和其中空位 氧峰相对强度逐渐减小直至消失, 两者存在很强的相关性. 上述结果为ZnO可见光发射的氧空位机理提供了新的实验证据. 对Ga掺杂抑制纳米结构中氧空位的原因进行了分析.
    Ga-doped ZnO nanostructures with various doping concentrations are prepared by using carbon thermal reduction reaction and in situ doping method. X-ray diffraction measurement reveals only wurzite structures existing in Ga-doped ZnO nanostructures. Scaning electron microscopy observations show that with the increase of Ga doping concentration, the morphology of ZnO nanstrucuture varies gradually from nanorods to nanocones. From the photoluminescence, we find that the visible light emission of ZnO nanostructures can be suppressed obviously and even disappears with the increase of Ga doping concentration. Moreover, the suppression of visible light emission is correlated well with the behavior, and X-ray photoelectron spectroscopy measurement reveals that the vacancy oxygen in ZnO nanostructure decreases drastically with the increase of Ga doping concentration. This result offers a new strong evidence for the mechanism that the visible light emission of ZnO nanostructures is caused by the oxygen vacancy defects. This work also demonstrates that a little Ga incorporation into ZnO nanostructures can effectively reduce the oxygen vacancy defects occurring.
    • 基金项目: 国家重点基础研究发展计划(批准号: 2011CB921403)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant No. 2011CB921403).
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    McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101

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    Ahn C H, Han W S, Kong B H, Cho H K 2009 Nanotechnology 20 015601

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    Yuan G D, Zhang W J, Jie J S, Fan X, Tang J X, Shafiq I, Ye Z Z, Lee C S, Lee S T 2008 Adv. Mater. 20 168

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    Zhong J, Muthukumar S, Chen Y, Lu Y, Ng H M, Jiang W, Garfunkel E L 2003 Appl. Phys. Lett. 83 3401

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    Huang M H, Wu Y Y, Feick H, Tran N, Weber E, Yang P D 2001 Adv. Mater. 13 133

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    Chang L W, Yeh J W, Cheng C L, Shieu F S, Shih H C 2011 Appl. Surf. Sci. 257 3145

    [24]

    Song Y W, Lee S Y 2009 Thin Solid Films 518 1323

    [25]

    Lee S Y, Song Y W, Jeon K A 2008 J. Cryst. Growth 310 4477

    [26]

    Zhu L P, Li J S, Ye Z Z, He H P, Chen X J, Zhao B H 2008 Opt. Mater. 31 237

    [27]

    Wang H H, Baek S, Song J J, Lee J, Lim S W 2008 Nanotechnology 19 075607

    [28]

    Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 84 1540

    [29]

    Patra M K, Manzoor K, Manoth M, Vadera S P, Kumar N 2008 J. Lumin. 128 267

    [30]

    Pan N, Wang X P, Zhang K, Hu H L, Xu B, Li F Q, Hou J G 2005 Nanotechnology 16 1069

    [31]

    Pan N, Wang X P, Li M, Li F Q, Hou J G 2007 J. Phys. Chem. C 111 17265

    [32]

    Chen M, Wang X, Yu Y H, Pei Z L, Bai X D, Sun C, Huang R F, Wen L S 2000 Appl. Surf. Sci. 158 134

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    Escobedo-Morales A, Pal U 2008 Appl. Phys. Lett. 93 193120

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    Zhang S B, Wei S H, Alex Z 2001 Phys. Rev. B 63 075205

  • [1]

    Ahsanulhaq Q, Umar A, Hahn Y B 2007 Nanotechnology 18 115603

    [2]

    Shen G Z, Chen P C, Ryu K M, Zhou C W 2009 J. Mater. Chem. 19 828

    [3]

    Song J H, Wang X D, Riedo E, Wang Z L 2005 J. Phys. Chem. B 109 9869

    [4]

    Umar A, Karunagaran B, Suh E K, Hahn Y B 2006 Nanotechnology 17 4072

    [5]

    Liu J Z, Ahn Y H, Park J Y, Koh K H, Lee S 2009 Nanotechnology 20 5203

    [6]

    Djurišić A B, Ng A M C, Chen X Y 2010 Prog. Quant. Electron. 34 191

    [7]

    Djurišić A B, Leung Y H 2006 Small 2 944

    [8]

    Zhang G B, Shi C S, Han Z F, Shi J Y, Fu Z X, Kirm M, Zimmerer G 2001 Chin. Phys. Lett. 18 441

    [9]

    Dai L, Chen X L, Wang W J, Zhou T, Hu B Q 2003 J. Phys. Condens. Matter 15 2221

    [10]

    Qiu J, Li X, He W, Park S J, Kim H K, Hwang Y H, Lee J H, Kim Y D 2009 Nanotechnology 20 155603

    [11]

    Guo C X, Fu Z X, Shi C S 1999 Chin. Phys. Lett. 16 146

    [12]

    Chen X L, Xu C S, Liu Y X, Qiao H Q, Xu H T, Ning Y H, Liu Y C 2010 J. Nanosci. Nanotechnol. 10 2185

    [13]

    Liu X, Wu X, Cao H, Chang R P H 2004 J. Appl. Phys. 95 3141

    [14]

    Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞, 傅竹西, 贾云波, 廖桂红 2001 物理学报 50 2208]

    [15]

    Garces N Y, Wang L, Bai L, Giles N C, Halliburton L E, Cantwell G 2002 Appl. Phys. Lett. 81 662

    [16]

    Xue H Z, Pan N, Zeng R G, Li M, Sun X, Ding Z J, Wang X P, Hou J G 2009 J. Phys. Chem. C 113 12715

    [17]

    McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101

    [18]

    Ahn C H, Han W S, Kong B H, Cho H K 2009 Nanotechnology 20 015601

    [19]

    Yuan G D, Zhang W J, Jie J S, Fan X, Tang J X, Shafiq I, Ye Z Z, Lee C S, Lee S T 2008 Adv. Mater. 20 168

    [20]

    Zhou M J, Zhu H J, Jiao Y, Rao Y Y, Hark S, Liu Y, Peng L M, Li Q 2009 J. Phys. Chem. C 113 8945

    [21]

    Zhong J, Muthukumar S, Chen Y, Lu Y, Ng H M, Jiang W, Garfunkel E L 2003 Appl. Phys. Lett. 83 3401

    [22]

    Huang M H, Wu Y Y, Feick H, Tran N, Weber E, Yang P D 2001 Adv. Mater. 13 133

    [23]

    Chang L W, Yeh J W, Cheng C L, Shieu F S, Shih H C 2011 Appl. Surf. Sci. 257 3145

    [24]

    Song Y W, Lee S Y 2009 Thin Solid Films 518 1323

    [25]

    Lee S Y, Song Y W, Jeon K A 2008 J. Cryst. Growth 310 4477

    [26]

    Zhu L P, Li J S, Ye Z Z, He H P, Chen X J, Zhao B H 2008 Opt. Mater. 31 237

    [27]

    Wang H H, Baek S, Song J J, Lee J, Lim S W 2008 Nanotechnology 19 075607

    [28]

    Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 84 1540

    [29]

    Patra M K, Manzoor K, Manoth M, Vadera S P, Kumar N 2008 J. Lumin. 128 267

    [30]

    Pan N, Wang X P, Zhang K, Hu H L, Xu B, Li F Q, Hou J G 2005 Nanotechnology 16 1069

    [31]

    Pan N, Wang X P, Li M, Li F Q, Hou J G 2007 J. Phys. Chem. C 111 17265

    [32]

    Chen M, Wang X, Yu Y H, Pei Z L, Bai X D, Sun C, Huang R F, Wen L S 2000 Appl. Surf. Sci. 158 134

    [33]

    Escobedo-Morales A, Pal U 2008 Appl. Phys. Lett. 93 193120

    [34]

    Zhang S B, Wei S H, Alex Z 2001 Phys. Rev. B 63 075205

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出版历程
  • 收稿日期:  2011-12-31
  • 修回日期:  2012-02-04
  • 刊出日期:  2012-08-05

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