Ferromagnetism of Zn0.97Cr0.03O synthesized by PLD

Xie Ling-Ling; Chen Shui-Yuan; Liu Feng-Jin; Zhang Jian-Min; Lin Ying-Bin; Huang Zhi-Gao

doi:10.7498/aps.63.077102

Abstract

Four Zn0.97Cr0.03O films were deposited on quartz wafers in various oxygen environment (0, 0.05, 0.15 and 0.2 Pa) using pulsed laser deposition (PLD). The films were characterized by XRD, PL, XPS, magnetic and electrical properties. Experimental results indicate that: (1) All the films are well crystallized and display a pure orientation. (2) All the films have ferromagnetism, and the film deposited at 0.15 Pa has the biggest Ms. (3) There exist VZn, Oi, Zni, VZn- and VO defects in the four films above, and the percentage of resonance peak area for VZn to the total area of all defects as a function of oxygen pressure is similar to Ms, which means that the magnetizations of the samples are closely related to Zn vacancy VZn. There is a Cr3+ state in the four films when the content of Cr3+ is the largest at 0.15 Pa. To sum up, the experimental results indicate that the substitutive Cr in the oxidation state of t3 and the neutral Zn vacancy in the Zn0.97Cr0.03O films is the most favorable defect complex to maintain a high stability of ferromagnetic order, which is consistent with the calculated results by the first-principle calculations.

Keywords:

Authors and contacts

1.
College of Physics and Energy Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350108, China
Funds: Project supported by the National Fundamental Research Program of China (Grant No. 2011CBA00200), and the National Science Foundation of China (Grant No. 11074039).

References

[1]	Pearton S J, Abernathy C R, Overerg M E, Thaler G T, Norton D P, Theodoropoulou N, Hebard A F, Park Y D, Ren F, Kim J, Boatner L A 2003 J. Appl. Phys. 93 1
[2]	Özgr , Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J, Morko? H 2005 J. Appl. Phys 98 041301
[3]	Liu C, Yun F, Morkoc H 2005 J. Mater. Sci.: Mater. Electr 16 597
[4]	Janisch R, Gopall P, Spaldin N A 2005 J. Phys.: Condens. Matter 17 R657
[5]	Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[6]	Sato K, Yoshida H K 2000 Jpn. J. Appl. Phys. 39 L555
[7]	Sato K, Yoshida H K 2002 Semicond. Sci. Technol. 17 367
[8]	Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
[9]	Saeki H, Tabata H, Kawai T 2001 Solid State Commun. 120 439
[10]	Han S J, Jang T H, Kim Y B, Park B G, Park J H, Jeong Y H 2003 Appl. Phys. Lett. 83 920
[11]	Ramachandran S, Tiwari A, Narayan J 2004 Appl. Phys. Lett. 84 5255
[12]	Cheng X M, Chien C L 2003 J. Appl. Phys. 93 7876
[13]	Gupta P S A, Rao K V, Owens F J, Sharma R 2003 Nature Mater. 2 673
[14]	Kundaliya D C, Ogale S B, Lofland S E, Dhar S, Metting C J 2004 Nature Mater. 3 709
[15]	Sati P, Hayn R, Kuzian R, Ré gnier S, Schäfer S, Stepanov A, Morhain C, Deparis C, Lagt M, Goiran M, Golacki Z 2006 Phys. Rev. Lett. 96 017203
[16]	Norton D P, Overberg M E, Pearton S J, Pruessner K, Budai J D, Boatner L A, Chisholm M F, Lee J S, Khim Z G, Park Y D, Wilson R G 2003 Appl. Phys. Lett. 83 5488
[17]	Jung S W, An S J, Yi G C, Jung C U, Lee S I, Cho S 2002 Appl. Phys. Lett. 80 4561
[18]	Lee H J, Jeong S Y, Cho C R, Park C H 2002 Appl. Phys. Lett. 81 4020
[19]	Yan L, Ong C K, Rao X S 2004 J. Appl. Phys. 96 508
[20]	Ando K, Saito H, Jin Z W, Jin T, Kawasaki M, Matsumoto Y, Koinuma H 2001 J. Appl. Phys. 89 7284
[21]	Jin Z W, Fukumura T, Kawasaki M, Ando K, Saito H, Sekiguchi T, Yoo Y Z, Murakami M, Matsumoto Y, Hasegawa T, Koinuma H 2001 Appl. Phys. Lett. 78 3824
[22]	Weng Z Z, Zhang J M, Huang Z G, Lin W X 2011 Chin. Phys. B 20 027103
[23]	Pan H, Yi J B, Shen L, Wu R Q, Yang J H, Lin J Y, Feng Y P, Ding J, Van L H, Yin J H 2007 Phys. Rev. Lett. 99 127201
[24]	Chen S, Wu Q Y, Chen Z G, Xu G G, Huang Z G 2009 Acta Phys. Sin. 58 2011 (in Chinese)[陈珊, 吴青云, 陈志高, 许桂贵, 黄志高2009 物理学报58 2011]
[25]	Zhan P, Wang W P, Liu C, Hu Y, Li Z C, Zhang Z J, Wang B Y, Cao X Z 2012 J. Appl. Phys. 111 033501
[26]	Phadnis C, Darshana Y I, Igor D, Arjun P, Naushad A, Shailaja M 2011 J. Appl. Phys. 110 114316
[27]	Zhang B Y, Yao B, Li Y F, Liu A M, Zhang Z Z, Li B H, Xing G Z, Wu T, Qin X B, Zhao D, Shan C X, She D Z 2011 Appl. Phys. Lett. 99 182503
[28]	Kataoka T, Yamazaki Y, Singh V R, Fujimori A, ChangF H, Lin H J, Chen D C, Huang T J, Xing G Z, Seo J W, Panagopoulos C, Wu T 2011 Phys. Rev. B 84 153203
[29]	Xiong Z, Liu X C Zhuo S Y, Yang J H, Shi E W, Yan W S 2011 Appl. Phys. Lett. 99 052513
[30]	Liu W J, Li W W, Hu Z G, Tang Z, Tang X D 2011 J. Appl. Phys. 110 013901
[31]	Punnoose A, Seehra M S, Park W K, Moodera J S 2003 J. Appl. Phys. 93 7867
[32]	Sato H, Yoshida H K 2001 J. Appl. Phys 40 334
[33]	Yang L, Yang J H 2009 Journal of Alloys and Compounds 486 835
[34]	Weng Z Z, Huang Z G, Lin W X 2012 J. Appl. Phys. 111 113915
[35]	Wang Q, Sun Q, Jena P, Kawazoe Y 2005 Appl. Phys. Lett. 87 162509
[36]	Lee H J, Jeong SY, Hwang J Y, Cho C R 2003 Europhys. Lett. 64 797
[37]	Liu H, Zhang X, Li L, Wang YX, Li K H, Gao Z Q, Zheng R K, Ringer S P, Zhang B, Zhang X X 2007 Appl. Phys. Lett. 91 072511
[38]	Hu Y M, Li S S, Chia C H 2011 Appl. Phys. Lett. 98 052503
[39]	Wang B, Iqbal J, Shan X, Huang G, Fu H, Yu R, Yu D 2009 Mater. Chem. Phys. 113 103
[40]	Xiong Z, Liu X C, Zhuo S Y, Yang J H, Shi E W, Yan W S, Yao S D, Pan H P 2013 Appl. Phys. Lett. 102 022414
[41]	Ghosh S, Khan G G, Das B, Mandal K 2011 J. Appl. Phys. 109 123927
[42]	Kong Y C, Yu D P, Zhang B, Fang W, Feng S Q 2001 Appl. Phys. Lett. 78 407
[43]	Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A, Gnade B E 1996 J. Appl. Phys. 79 7983
[44]	Djurisic A B, Leung Y H 2006 Small 2 944
[45]	Borseth T M, Svensson B G, Kuznetsov A Y 2006 Appl. Phys. Lett. 89 262112-l
[46]	Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Science China 30 358 (in Chinese)[徐彭寿, 孙玉明, 施朝淑, 徐法强, 潘海斌2001 中国科学30 358]
[47]	Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[48]	Clark S J, Robertson J, Lany S Zunger A 2010 Phys. Rev. B 81 115311
[49]	Yilmaz S, Parlak S Özcan, Altunbas M, McGlynn E, Bacaksz E 2011 Applied Surface Science 257 9293
[50]	Liu H L, Fei L H, Yang J H, Xin J, Liu Y, Liu X Y, Gao M 2011 Solid State Communications 151 1864
[51]	Lin Y B, Yang Y M, Zhuang M, Huang S L, Wu L P, Huang Z G Zhang F M, Du Y W 2008 J. Phys. D: Appl. Phys. 41 195007

Cited By

[1]	Pearton S J, Abernathy C R, Overerg M E, Thaler G T, Norton D P, Theodoropoulou N, Hebard A F, Park Y D, Ren F, Kim J, Boatner L A 2003 J. Appl. Phys. 93 1
[2]	Özgr , Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J, Morko? H 2005 J. Appl. Phys 98 041301
[3]	Liu C, Yun F, Morkoc H 2005 J. Mater. Sci.: Mater. Electr 16 597
[4]	Janisch R, Gopall P, Spaldin N A 2005 J. Phys.: Condens. Matter 17 R657
[5]	Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[6]	Sato K, Yoshida H K 2000 Jpn. J. Appl. Phys. 39 L555
[7]	Sato K, Yoshida H K 2002 Semicond. Sci. Technol. 17 367
[8]	Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
[9]	Saeki H, Tabata H, Kawai T 2001 Solid State Commun. 120 439
[10]	Han S J, Jang T H, Kim Y B, Park B G, Park J H, Jeong Y H 2003 Appl. Phys. Lett. 83 920
[11]	Ramachandran S, Tiwari A, Narayan J 2004 Appl. Phys. Lett. 84 5255
[12]	Cheng X M, Chien C L 2003 J. Appl. Phys. 93 7876
[13]	Gupta P S A, Rao K V, Owens F J, Sharma R 2003 Nature Mater. 2 673
[14]	Kundaliya D C, Ogale S B, Lofland S E, Dhar S, Metting C J 2004 Nature Mater. 3 709
[15]	Sati P, Hayn R, Kuzian R, Ré gnier S, Schäfer S, Stepanov A, Morhain C, Deparis C, Lagt M, Goiran M, Golacki Z 2006 Phys. Rev. Lett. 96 017203
[16]	Norton D P, Overberg M E, Pearton S J, Pruessner K, Budai J D, Boatner L A, Chisholm M F, Lee J S, Khim Z G, Park Y D, Wilson R G 2003 Appl. Phys. Lett. 83 5488
[17]	Jung S W, An S J, Yi G C, Jung C U, Lee S I, Cho S 2002 Appl. Phys. Lett. 80 4561
[18]	Lee H J, Jeong S Y, Cho C R, Park C H 2002 Appl. Phys. Lett. 81 4020
[19]	Yan L, Ong C K, Rao X S 2004 J. Appl. Phys. 96 508
[20]	Ando K, Saito H, Jin Z W, Jin T, Kawasaki M, Matsumoto Y, Koinuma H 2001 J. Appl. Phys. 89 7284
[21]	Jin Z W, Fukumura T, Kawasaki M, Ando K, Saito H, Sekiguchi T, Yoo Y Z, Murakami M, Matsumoto Y, Hasegawa T, Koinuma H 2001 Appl. Phys. Lett. 78 3824
[22]	Weng Z Z, Zhang J M, Huang Z G, Lin W X 2011 Chin. Phys. B 20 027103
[23]	Pan H, Yi J B, Shen L, Wu R Q, Yang J H, Lin J Y, Feng Y P, Ding J, Van L H, Yin J H 2007 Phys. Rev. Lett. 99 127201
[24]	Chen S, Wu Q Y, Chen Z G, Xu G G, Huang Z G 2009 Acta Phys. Sin. 58 2011 (in Chinese)[陈珊, 吴青云, 陈志高, 许桂贵, 黄志高2009 物理学报58 2011]
[25]	Zhan P, Wang W P, Liu C, Hu Y, Li Z C, Zhang Z J, Wang B Y, Cao X Z 2012 J. Appl. Phys. 111 033501
[26]	Phadnis C, Darshana Y I, Igor D, Arjun P, Naushad A, Shailaja M 2011 J. Appl. Phys. 110 114316
[27]	Zhang B Y, Yao B, Li Y F, Liu A M, Zhang Z Z, Li B H, Xing G Z, Wu T, Qin X B, Zhao D, Shan C X, She D Z 2011 Appl. Phys. Lett. 99 182503
[28]	Kataoka T, Yamazaki Y, Singh V R, Fujimori A, ChangF H, Lin H J, Chen D C, Huang T J, Xing G Z, Seo J W, Panagopoulos C, Wu T 2011 Phys. Rev. B 84 153203
[29]	Xiong Z, Liu X C Zhuo S Y, Yang J H, Shi E W, Yan W S 2011 Appl. Phys. Lett. 99 052513
[30]	Liu W J, Li W W, Hu Z G, Tang Z, Tang X D 2011 J. Appl. Phys. 110 013901
[31]	Punnoose A, Seehra M S, Park W K, Moodera J S 2003 J. Appl. Phys. 93 7867
[32]	Sato H, Yoshida H K 2001 J. Appl. Phys 40 334
[33]	Yang L, Yang J H 2009 Journal of Alloys and Compounds 486 835
[34]	Weng Z Z, Huang Z G, Lin W X 2012 J. Appl. Phys. 111 113915
[35]	Wang Q, Sun Q, Jena P, Kawazoe Y 2005 Appl. Phys. Lett. 87 162509
[36]	Lee H J, Jeong SY, Hwang J Y, Cho C R 2003 Europhys. Lett. 64 797
[37]	Liu H, Zhang X, Li L, Wang YX, Li K H, Gao Z Q, Zheng R K, Ringer S P, Zhang B, Zhang X X 2007 Appl. Phys. Lett. 91 072511
[38]	Hu Y M, Li S S, Chia C H 2011 Appl. Phys. Lett. 98 052503
[39]	Wang B, Iqbal J, Shan X, Huang G, Fu H, Yu R, Yu D 2009 Mater. Chem. Phys. 113 103
[40]	Xiong Z, Liu X C, Zhuo S Y, Yang J H, Shi E W, Yan W S, Yao S D, Pan H P 2013 Appl. Phys. Lett. 102 022414
[41]	Ghosh S, Khan G G, Das B, Mandal K 2011 J. Appl. Phys. 109 123927
[42]	Kong Y C, Yu D P, Zhang B, Fang W, Feng S Q 2001 Appl. Phys. Lett. 78 407
[43]	Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A, Gnade B E 1996 J. Appl. Phys. 79 7983
[44]	Djurisic A B, Leung Y H 2006 Small 2 944
[45]	Borseth T M, Svensson B G, Kuznetsov A Y 2006 Appl. Phys. Lett. 89 262112-l
[46]	Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2001 Science China 30 358 (in Chinese)[徐彭寿, 孙玉明, 施朝淑, 徐法强, 潘海斌2001 中国科学30 358]
[47]	Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[48]	Clark S J, Robertson J, Lany S Zunger A 2010 Phys. Rev. B 81 115311
[49]	Yilmaz S, Parlak S Özcan, Altunbas M, McGlynn E, Bacaksz E 2011 Applied Surface Science 257 9293
[50]	Liu H L, Fei L H, Yang J H, Xin J, Liu Y, Liu X Y, Gao M 2011 Solid State Communications 151 1864
[51]	Lin Y B, Yang Y M, Zhuang M, Huang S L, Wu L P, Huang Z G Zhang F M, Du Y W 2008 J. Phys. D: Appl. Phys. 41 195007

[1]	Yang Rui-Long, Zhang Yu-Ying, Yang Ke, Jiang Qi-Tao, Yang Xiao-Ting, Guo Jin-Zhong, Xu Xiao-Hong. Growth and magnetic properties of two-dimensional vanadium-doped Cr₂S₃ nanosheets. Acta Physica Sinica, 2024, 0(0): 0-0. doi: 10.7498/aps.73.20231229
[2]	Yang Rui-Long, Zhang Yu-Ying, Yang Ke, Jiang Qi-Tao, Yang Xiao-Ting, Guo Jin-Zhong, Xu Xiao-Hong. Growth and magnetic properties of two-dimensional vanadium-doped Cr₂S₃ nanosheets. Acta Physica Sinica, 2023, 72(24): 247501. doi: 10.7498/aps.72.20231229
[3]	Zhang Jian-Hui, Han Ji-Gang. Tuning the photoluminescence, magnetism and cytotoxicity of ZnO by tailoring the nanostructures. Acta Physica Sinica, 2015, 64(9): 097702. doi: 10.7498/aps.64.097702
[4]	Wu Jian-Bang, Zhou Min-Jie, Wang Xue-Min, Wang Yu-Ying, Xiong Zheng-Wei, Cheng Xin-Lu, Marie-José Casanove, Christophe Gatel, Wu Wei-Dong. Epitaxial growth micro-structure and magnetic studies of FePt nanoparticles：MgO multi-layer composite thin films. Acta Physica Sinica, 2014, 63(16): 166801. doi: 10.7498/aps.63.166801
[5]	Wang Wei, Tang Jia-Wei, Wang Le-Tian, Chen Xiao-Bing. High-temperature piezoelectirc thin films of 0.20BiInO3-0.80PbTiO3 deposited by pulsed laser deposition（Retracted Article). Acta Physica Sinica, 2013, 62(23): 237701. doi: 10.7498/aps.62.237701
[6]	Xu Yun, Li Yun-Peng, Jin Lu, Ma Xiang-Yang, Yang De-Ren. Low-threshold electrically pumped ultraviolet random lasing from ZnO film prepared by pulsed laser deposition. Acta Physica Sinica, 2013, 62(8): 084207. doi: 10.7498/aps.62.084207
[7]	Gu Jian-Jun, Sun Hui-Yuan, Liu Li-Hu, Qi Yun-Kai, Xu Qin. Influence of structural phase transition on Ferromagnetism in Fe-doped TiO2 thin films. Acta Physica Sinica, 2012, 61(1): 017501. doi: 10.7498/aps.61.017501
[8]	Ding Bin-Feng, Xiang Feng-Hua, Wang Li-Ming, Wang Hong-Tao. Amending the ferromagnetic properties of Ga0.94Mn0.06As films by He+ irradiation. Acta Physica Sinica, 2012, 61(4): 046105. doi: 10.7498/aps.61.046105
[9]	Wang Shu-Fang, Chen Shan-Shan, Chen Jing-Chun, Yan Guo-Ying, Qiao Xiao-Qi, Liu Fu-Qiang, Wang Jiang-Long, Ding Xue-Cheng, Fu Guang-Sheng. The effects of substrate temperature and oxygen pressure on the crystal strcture and transport properties of Bi2Sr2Co2Oy thermoelectric films deposited by pulsed laser deposition. Acta Physica Sinica, 2012, 61(6): 066804. doi: 10.7498/aps.61.066804
[10]	Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei. Photoluminescence and Raman properties of Sb-doped ZnO thin film. Acta Physica Sinica, 2012, 61(24): 247701. doi: 10.7498/aps.61.247701
[11]	Li Ming-Biao, Zhang Tian-Xian, Shi Li-Bin. Magnetic properties of N-doped(1120) ZnO thin films. Acta Physica Sinica, 2011, 60(9): 097504. doi: 10.7498/aps.60.097504
[12]	Tao Ye-Wei, Li Shi-Shuai, Feng Xiu-Peng, Huang Jin-Zhao, Liu Chun-Yan, Zhang Zhong. Growth and chracterization of Zn1- x-y Na x Co y O thinfilms prepared by pulsed laser deposition. Acta Physica Sinica, 2011, 60(5): 057105. doi: 10.7498/aps.60.057105
[13]	Chu Hai-Feng, Li Jie, Li Shao, Li Song-Lin, Wang Jia, Gao Yan-Li, Deng Hui, Wang Ning, Zhang Yu, Wu Yu-Lin, Zheng Dong-Ning. Glassy magnetic behaviors in oxygen-deficient Sr2CoO4-δ films. Acta Physica Sinica, 2010, 59(9): 6585-6592. doi: 10.7498/aps.59.6585
[14]	Fang Qing-Qing, Wang Wei-Na, Zhou Jun, Wang Sheng-Nan, Yan Fang-Liang, Liu Yan-Mei, Li Yan, Lü Qing-Rong. Photoluminescence characteristics of Zn1-xMgxO films. Acta Physica Sinica, 2009, 58(8): 5836-5841. doi: 10.7498/aps.58.5836
[15]	Liu Ting, Tan Song-Lin, Zhang Hui, Qin Yi, Zhang Peng-Xiang. Oxygen pressure effect on lattice parameters of SrTiO3 and SrNb0.2Ti0.8O3 thin films and laser-induced thermoelectric voltages effect. Acta Physica Sinica, 2008, 57(7): 4424-4427. doi: 10.7498/aps.57.4424
[16]	Zhou Jun, Fang Qing-Qing, Wang Bao-Ming, Liu Yan-Mei, Li Mao, Yan Fang-Liang, Wang Sheng-Nan. Effect of annealing and Mg content on the microstructure and optical properties of Zn1-xMgxO films. Acta Physica Sinica, 2008, 57(10): 6614-6619. doi: 10.7498/aps.57.6614
[17]	Liu Zhen, Wang Shu-Fang, Zhao Song-Qing, Zhou Yue-Liang. Pulsed laser deposition of epitaxial CeO2 thin films on biaxially textured Ni substrate. Acta Physica Sinica, 2005, 54(12): 5820-5823. doi: 10.7498/aps.54.5820
[18]	Xia Hong-Xu, Yan Jun, Yu Jiang-Ying, Zhang Shi-Yuan. Magnetic properties and colossal magnetoresistance effect in perovskite-type manganite Ca(Mn2Cu1)Mn4O12. Acta Physica Sinica, 2004, 53(7): 2342-2346. doi: 10.7498/aps.53.2342
[19]	Peng Xing-Ping, Lan Wei, Tan Yong-Sheng, Tong Li-Guo, Wang Yin-Yue. Photoluminescent properties of Cu-doped ZnO thin films. Acta Physica Sinica, 2004, 53(8): 2705-2709. doi: 10.7498/aps.53.2705
[20]	FU GUANG-SHENG, YU WEI, WANG SHU-FANG, LI XIAO-WEI, ZHANG LIAN-SHUI, HAN LI. CARBON NITRIDE THIN FILMS PREPARED BY PULSED XeCl EXCIMERLASER DEPOSITION ASSISTED BY DC GLOW DISCHARGE. Acta Physica Sinica, 2001, 50(11): 2263-2268. doi: 10.7498/aps.50.2263

Catalog

Vol. 63, Issue 7 - 2014-04-05

Metrics

Abstract views: 6393
PDF Downloads: 485
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板