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采用脉冲激光沉积法制备了0.20BiInO3-0.80PbTiO3（20BI-PT）高温压电薄膜，并与0.15BiInO3-0.85PbTiO3（15BI-PT）样品进行了比较研究. X射线衍射谱显示，20BI-PT样品100峰出现了明显的劈裂，显示样品具有更高的四方对称性. FESEM图显示，20BI-PT样品中出现了部分111取向的三角形晶粒. 20BI-PT样品的铁电剩余极化（Pr）为～28 C/cm2，矫顽场（Ec）为～120 kV/cm，相较15BI-PT样品，Pr略有增加，但同时Ec也有增加. 20BI-PT样品的横向压电系数（e31，f）约为4.70.6 C/m2，和15BI-PT相比几乎一样. 介电温度谱显示，20BI-PT 样品的居里温度比15BI-PT增加了约30 ℃，达590 ℃，且介电峰没有明显的频率依赖性. Rayleigh分析显示，20BI-PT样品中内在本征因素及可翻转畴对介电非线性的贡献和15BI-PT基本相同，但是外在因素的贡献没有15BI-PT的贡献大，这可能和20BI-PT样品中晶粒111相对取向率较高有关.High-temperature piezoelectric thin films of 0.20BiInO3-0.80PbTiO3 (20BI-PT) were prepared via pulsed laser deposition and investigated by comparison with 0.15BiInO3-0.85PbTiO3(15BI-PT). XRD patterns show that (100) peak of 20BI-PT has been split, indicating a higher tetragnality than in 15BI-PT. FESEM images reveal some triangular grains corresponding to [111]-oriented grains in 20BI-PT. The remanent polarization (Pr) and coercive field (Ec) of 20BI-PT are ～ 28 C/cm2 and ～120 kV/cm, respectively. It is shown that the transverse piezoelectric coefficient e31, f keeps almost the same in 20BI-PT and 15BI-PT. The temperature dependence of dielectric permittivity in 20BI-PT reveals a higher Curie temperature (590 ℃) than that in 15BI-PT and no apparent frequency dependence is detected. Rayleigh analyses are performed to identify the extrinsic contributions to dielectric nonlinearity for different x. It is seen that x=0.15 exhibits greater extrinsic contributions to dielectric nonlinearity than the other compositions.
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Keywords:
- thin films /
- pulsed laser deposition /
- ferroelectricity /
- piezoelectricity
[1] Randall C A, Eitel R E, Stringer C, Song T H, Zhang S J, Shrout T R 2004 High Performance, High Temperature Perovskite Piezoelectric Ceramics in Piezoelectric Single Crystals edited by S. Trolier-McKinstry (The Pennsylvania State University, University Park, 2004)
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[4] Eitel R E, Randall C A, Shrout T R 2001 Jpn. J. Appl. Phys. Part 1 40 5999
[5] Eitel R E, Randall C A, Shrout T R 2002 Jpn. J. Appl. Phys. Part 1 41 2099
[6] Nino J C, Trolier-McKinstry S 2004 J. Mater. Res. 19 568
[7] Wen H, Wang X, Zhong C, Shu L, Li L 2007 Appl. Phys. Lett. 90 202902
[8] Grinberg I, Suchomel M R, Davies P K, Rappe A M 2005 J. Appl. Phys. 98 094111
[9] Duan R, Speyer R F, Alberta E, Shrout T R 2004 J. Mater. Res. 19 2185
[10] Zhang S, Xia R, Randall C A, Shrout T R, Duan R, Speyer R F 2005 J. Mater. Res. 20 2067
[11] Ko S W, Yeo H G, Trolier-McKinstry S 2009 Appl. Phys. Lett. 95 162901
[12] Lee S Y, Ko S W, Lee S, Trolier-McKinstry S 2012 Appl. Phys. Lett. 100 212905
[13] Qin B, Chen Y, Jiang Y, Xue X, Xiao D, Zhu J 2007 Proceedings of the 16th IEEE International Symposium on Applications of Ferroelectric 616–617
[14] Wilke R H T, Moses P, Jousse P, Yeager C, Trolier-McKinstry S 2012 Sensors and Actuators A 173 152
[15] Shannon R D 1976 Acta Cryst. A 32 751
[16] Li Y, Yang Y, Yao J, Viswan R, Wang Z, Li J, Viehland D 2012 Appl. Phys. Lett. 101 022905
[17] Sun P N, Cui L, Lu T Q 2009 Chin. Phys. B 18 1658
[18] Yang N, Chen G H, Zhang Y 2000 Acta Phys. Sin. 49 2225 (in Chinese) [杨宁, 陈光华, 张阳 2000 物理学报 49 2225]
[19] Shimakawa Y, Kubo Y, Nakagawa Y, Goto S, Kamiyama T, Asano H, Izumi F 2000 Phys. Rev. B 61 6559
[20] Noguchi Y, Miwa I, Goshima Y, Miyayama M 2000 Jpn. J. Appl. Phys. 39 L1259
[21] Gharb N B, Trolier-McKinstry S 2005 J. Appl. Phys. 97 064106
[22] Ihlefeld J F, Shelton C T 2012 Appl. Phys. Lett. 101 052902
[23] Damjanovic D, Demartin M 1996 J. Phys. D: Appl. Phys. 29 2057
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[1] Randall C A, Eitel R E, Stringer C, Song T H, Zhang S J, Shrout T R 2004 High Performance, High Temperature Perovskite Piezoelectric Ceramics in Piezoelectric Single Crystals edited by S. Trolier-McKinstry (The Pennsylvania State University, University Park, 2004)
[2] Turner R C, Fuierer P A, Newnham R E, Shrout T R 1994 Appl. Acoust. 41 299
[3] Liu P, Yang T Q, Zhang L Y 2000 Acta Phys. Sin. 49 2300 (in Chinese) [刘鹏, 杨同青, 张良莹 2000 物理学报 49 2303]
[4] Eitel R E, Randall C A, Shrout T R 2001 Jpn. J. Appl. Phys. Part 1 40 5999
[5] Eitel R E, Randall C A, Shrout T R 2002 Jpn. J. Appl. Phys. Part 1 41 2099
[6] Nino J C, Trolier-McKinstry S 2004 J. Mater. Res. 19 568
[7] Wen H, Wang X, Zhong C, Shu L, Li L 2007 Appl. Phys. Lett. 90 202902
[8] Grinberg I, Suchomel M R, Davies P K, Rappe A M 2005 J. Appl. Phys. 98 094111
[9] Duan R, Speyer R F, Alberta E, Shrout T R 2004 J. Mater. Res. 19 2185
[10] Zhang S, Xia R, Randall C A, Shrout T R, Duan R, Speyer R F 2005 J. Mater. Res. 20 2067
[11] Ko S W, Yeo H G, Trolier-McKinstry S 2009 Appl. Phys. Lett. 95 162901
[12] Lee S Y, Ko S W, Lee S, Trolier-McKinstry S 2012 Appl. Phys. Lett. 100 212905
[13] Qin B, Chen Y, Jiang Y, Xue X, Xiao D, Zhu J 2007 Proceedings of the 16th IEEE International Symposium on Applications of Ferroelectric 616–617
[14] Wilke R H T, Moses P, Jousse P, Yeager C, Trolier-McKinstry S 2012 Sensors and Actuators A 173 152
[15] Shannon R D 1976 Acta Cryst. A 32 751
[16] Li Y, Yang Y, Yao J, Viswan R, Wang Z, Li J, Viehland D 2012 Appl. Phys. Lett. 101 022905
[17] Sun P N, Cui L, Lu T Q 2009 Chin. Phys. B 18 1658
[18] Yang N, Chen G H, Zhang Y 2000 Acta Phys. Sin. 49 2225 (in Chinese) [杨宁, 陈光华, 张阳 2000 物理学报 49 2225]
[19] Shimakawa Y, Kubo Y, Nakagawa Y, Goto S, Kamiyama T, Asano H, Izumi F 2000 Phys. Rev. B 61 6559
[20] Noguchi Y, Miwa I, Goshima Y, Miyayama M 2000 Jpn. J. Appl. Phys. 39 L1259
[21] Gharb N B, Trolier-McKinstry S 2005 J. Appl. Phys. 97 064106
[22] Ihlefeld J F, Shelton C T 2012 Appl. Phys. Lett. 101 052902
[23] Damjanovic D, Demartin M 1996 J. Phys. D: Appl. Phys. 29 2057
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