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脉冲激光沉积法制备高温压电薄膜0.20 BiInO3-0.80PbTiO3(已撤稿)

王伟 唐佳伟 王乐天 陈小兵

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脉冲激光沉积法制备高温压电薄膜0.20 BiInO3-0.80PbTiO3(已撤稿)

王伟, 唐佳伟, 王乐天, 陈小兵

High-temperature piezoelectirc thin films of 0.20BiInO3-0.80PbTiO3 deposited by pulsed laser deposition(Retracted Article)

Wang Wei, Tang Jia-Wei, Wang Le-Tian, Chen Xiao-Bing
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  • 采用脉冲激光沉积法制备了0.20BiInO3-0.80PbTiO3(20BI-PT)高温压电薄膜,并与0.15BiInO3-0.85PbTiO3(15BI-PT)样品进行了比较研究. X射线衍射谱显示,20BI-PT样品100峰出现了明显的劈裂,显示样品具有更高的四方对称性. FESEM图显示,20BI-PT样品中出现了部分111取向的三角形晶粒. 20BI-PT样品的铁电剩余极化(Pr)为~28 C/cm2,矫顽场(Ec)为~120 kV/cm,相较15BI-PT样品,Pr略有增加,但同时Ec也有增加. 20BI-PT样品的横向压电系数(e31,f)约为4.70.6 C/m2,和15BI-PT相比几乎一样. 介电温度谱显示,20BI-PT 样品的居里温度比15BI-PT增加了约30 ℃,达590 ℃,且介电峰没有明显的频率依赖性. Rayleigh分析显示,20BI-PT样品中内在本征因素及可翻转畴对介电非线性的贡献和15BI-PT基本相同,但是外在因素的贡献没有15BI-PT的贡献大,这可能和20BI-PT样品中晶粒111相对取向率较高有关.
    High-temperature piezoelectric thin films of 0.20BiInO3-0.80PbTiO3 (20BI-PT) were prepared via pulsed laser deposition and investigated by comparison with 0.15BiInO3-0.85PbTiO3(15BI-PT). XRD patterns show that (100) peak of 20BI-PT has been split, indicating a higher tetragnality than in 15BI-PT. FESEM images reveal some triangular grains corresponding to [111]-oriented grains in 20BI-PT. The remanent polarization (Pr) and coercive field (Ec) of 20BI-PT are ~ 28 C/cm2 and ~120 kV/cm, respectively. It is shown that the transverse piezoelectric coefficient e31, f keeps almost the same in 20BI-PT and 15BI-PT. The temperature dependence of dielectric permittivity in 20BI-PT reveals a higher Curie temperature (590 ℃) than that in 15BI-PT and no apparent frequency dependence is detected. Rayleigh analyses are performed to identify the extrinsic contributions to dielectric nonlinearity for different x. It is seen that x=0.15 exhibits greater extrinsic contributions to dielectric nonlinearity than the other compositions.
    • 基金项目: 国家自然科学基金(批准号:51072177)和江苏省教育厅自然科学基础研究(批准号:08KJB140011)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51072177), and the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province, China (Grant No. 08KJB140011).
    [1]

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    [2]

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    Eitel R E, Randall C A, Shrout T R 2001 Jpn. J. Appl. Phys. Part 1 40 5999

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    Eitel R E, Randall C A, Shrout T R 2002 Jpn. J. Appl. Phys. Part 1 41 2099

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    Nino J C, Trolier-McKinstry S 2004 J. Mater. Res. 19 568

    [7]

    Wen H, Wang X, Zhong C, Shu L, Li L 2007 Appl. Phys. Lett. 90 202902

    [8]

    Grinberg I, Suchomel M R, Davies P K, Rappe A M 2005 J. Appl. Phys. 98 094111

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    Duan R, Speyer R F, Alberta E, Shrout T R 2004 J. Mater. Res. 19 2185

    [10]

    Zhang S, Xia R, Randall C A, Shrout T R, Duan R, Speyer R F 2005 J. Mater. Res. 20 2067

    [11]

    Ko S W, Yeo H G, Trolier-McKinstry S 2009 Appl. Phys. Lett. 95 162901

    [12]

    Lee S Y, Ko S W, Lee S, Trolier-McKinstry S 2012 Appl. Phys. Lett. 100 212905

    [13]

    Qin B, Chen Y, Jiang Y, Xue X, Xiao D, Zhu J 2007 Proceedings of the 16th IEEE International Symposium on Applications of Ferroelectric 616–617

    [14]

    Wilke R H T, Moses P, Jousse P, Yeager C, Trolier-McKinstry S 2012 Sensors and Actuators A 173 152

    [15]

    Shannon R D 1976 Acta Cryst. A 32 751

    [16]

    Li Y, Yang Y, Yao J, Viswan R, Wang Z, Li J, Viehland D 2012 Appl. Phys. Lett. 101 022905

    [17]

    Sun P N, Cui L, Lu T Q 2009 Chin. Phys. B 18 1658

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    Yang N, Chen G H, Zhang Y 2000 Acta Phys. Sin. 49 2225 (in Chinese) [杨宁, 陈光华, 张阳 2000 物理学报 49 2225]

    [19]

    Shimakawa Y, Kubo Y, Nakagawa Y, Goto S, Kamiyama T, Asano H, Izumi F 2000 Phys. Rev. B 61 6559

    [20]

    Noguchi Y, Miwa I, Goshima Y, Miyayama M 2000 Jpn. J. Appl. Phys. 39 L1259

    [21]

    Gharb N B, Trolier-McKinstry S 2005 J. Appl. Phys. 97 064106

    [22]

    Ihlefeld J F, Shelton C T 2012 Appl. Phys. Lett. 101 052902

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    Damjanovic D, Demartin M 1996 J. Phys. D: Appl. Phys. 29 2057

  • [1]

    Randall C A, Eitel R E, Stringer C, Song T H, Zhang S J, Shrout T R 2004 High Performance, High Temperature Perovskite Piezoelectric Ceramics in Piezoelectric Single Crystals edited by S. Trolier-McKinstry (The Pennsylvania State University, University Park, 2004)

    [2]

    Turner R C, Fuierer P A, Newnham R E, Shrout T R 1994 Appl. Acoust. 41 299

    [3]

    Liu P, Yang T Q, Zhang L Y 2000 Acta Phys. Sin. 49 2300 (in Chinese) [刘鹏, 杨同青, 张良莹 2000 物理学报 49 2303]

    [4]

    Eitel R E, Randall C A, Shrout T R 2001 Jpn. J. Appl. Phys. Part 1 40 5999

    [5]

    Eitel R E, Randall C A, Shrout T R 2002 Jpn. J. Appl. Phys. Part 1 41 2099

    [6]

    Nino J C, Trolier-McKinstry S 2004 J. Mater. Res. 19 568

    [7]

    Wen H, Wang X, Zhong C, Shu L, Li L 2007 Appl. Phys. Lett. 90 202902

    [8]

    Grinberg I, Suchomel M R, Davies P K, Rappe A M 2005 J. Appl. Phys. 98 094111

    [9]

    Duan R, Speyer R F, Alberta E, Shrout T R 2004 J. Mater. Res. 19 2185

    [10]

    Zhang S, Xia R, Randall C A, Shrout T R, Duan R, Speyer R F 2005 J. Mater. Res. 20 2067

    [11]

    Ko S W, Yeo H G, Trolier-McKinstry S 2009 Appl. Phys. Lett. 95 162901

    [12]

    Lee S Y, Ko S W, Lee S, Trolier-McKinstry S 2012 Appl. Phys. Lett. 100 212905

    [13]

    Qin B, Chen Y, Jiang Y, Xue X, Xiao D, Zhu J 2007 Proceedings of the 16th IEEE International Symposium on Applications of Ferroelectric 616–617

    [14]

    Wilke R H T, Moses P, Jousse P, Yeager C, Trolier-McKinstry S 2012 Sensors and Actuators A 173 152

    [15]

    Shannon R D 1976 Acta Cryst. A 32 751

    [16]

    Li Y, Yang Y, Yao J, Viswan R, Wang Z, Li J, Viehland D 2012 Appl. Phys. Lett. 101 022905

    [17]

    Sun P N, Cui L, Lu T Q 2009 Chin. Phys. B 18 1658

    [18]

    Yang N, Chen G H, Zhang Y 2000 Acta Phys. Sin. 49 2225 (in Chinese) [杨宁, 陈光华, 张阳 2000 物理学报 49 2225]

    [19]

    Shimakawa Y, Kubo Y, Nakagawa Y, Goto S, Kamiyama T, Asano H, Izumi F 2000 Phys. Rev. B 61 6559

    [20]

    Noguchi Y, Miwa I, Goshima Y, Miyayama M 2000 Jpn. J. Appl. Phys. 39 L1259

    [21]

    Gharb N B, Trolier-McKinstry S 2005 J. Appl. Phys. 97 064106

    [22]

    Ihlefeld J F, Shelton C T 2012 Appl. Phys. Lett. 101 052902

    [23]

    Damjanovic D, Demartin M 1996 J. Phys. D: Appl. Phys. 29 2057

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出版历程
  • 收稿日期:  2013-07-26
  • 修回日期:  2013-08-07
  • 刊出日期:  2013-12-05

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