Net sensitivity for open and short model based on layout optimization

Wang Jun-Ping; Qi Su-Yang; Liu Shi-Gang

doi:10.7498/aps.63.128503

Abstract

To maintain and improve the manufacturing yield of integrated circuit becomes a research hot spot in optimized circuit design and manufacturing technology, with the expansion of the integrated circuit scale and shrinkage of devices feature sizes. In order to reduce the yield loss caused by redundancy material defect and missing material defect, choosing a preferentially optimizing net becomes an important subject in the process of layout optimization. Layout optimization is an effective way to increase integrated circuit yield which is based on the critical area diminution. In the paper presented is a new kind of short circuit and open circuit sensitivity model, which is net-based and not only reflects the size of the short critical area between the single net and the nets around it, but also possesses open critical area. Because this model is based on single net and includes the information about the surrounding net, the short critical area between the single net and the net around it and the open critical area of its own can be reduced at the same time. In this way, the efficiency of layout optimization is enhanced. According to the experimental results, this sensitivity model can be used to choose the position for optimization.

Keywords:

Authors and contacts

1.
School of Communication Engineering, Xidian University, Xi'an 710071, China;
2.
School of Microelectronics, Xidian University, Xi'an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61173088, 61373172) and the Industry Technology Innovation Program of Xi'an, China (Grant No. CX12485).

References

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[15]	Li X, Song Z T, Cai D L, Chen X G, Jia X L 2009 Chin. Phys. Lett. 26 128501
[16]	Ding S, Song Z T, Liu B, Zhu M, Chen X T, Chen Y F, Shen J, Fu C, Feng S L 2008 Chin. Phys. Lett. 25 3815
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[18]	Li X, Song Z T, Cai D L, Chen X G, Jia X L 2009 Chin. Phys. Lett. 26 128501
[19]	Ding S, Song Z T, Liu B, Zhu M, Chen X T, Chen Y F, Shen J, Fu C, Feng S L 2008 Chin. Phys. Lett. 25 3815
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[21]	Wang J P, Hao Y 2005 Chin. J. Semicond. 26 1514
[22]	Pan D Z, Minsik C, Kun Y 2010 Foundations and Trends in Electronic Design Automation 4 1
[23]	Pan D Z, Minsik C, Kun Y, Ban Y C 2008 The 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, October 20-23, 2008 p2232
[24]	Liu S G, Wang J P, Su Y B, Wang L 2012 Chin. Phys. B 21 098503
[25]	Wang J P, Ning P Wang L Su Y B, Liu S G, Wan G T, Wang S 2010 Open NSO Modeling for DFM 2nd International Conference on Information Engineering and Computer Science-Proceedings Wuhan, China, December 25-26, 2010 p1

Cited By

[1]	Chiang C, Kawa J 2006 IEEE Asia Pacific Conference on Circuits and Systems Singapore, December 4-7, 2006 p1099
[2]	Raghvendra S, Hurat, Philippe 2005 The 18th International Conference on VLSI Design California, USA, January 3-7, 2005 p705
[3]	Tian X B, Xu H, Li Q J 2013 Chin. Phys. B 22 088502
[4]	Fang X D, Tang Y H, Wu J J, Zhu X, Zhou J, Huang D 2013 Chin. Phys. B 22 078901
[5]	Fang X D, Tang Y H, Wu J J 2012 Chin. Phys. B 21 098901
[6]	Muller D 2006 IEEE/ACM International Conference on Computer-Aided Design San Jose CA, November 5-9, 2006 p480
[7]	Minsik C, Hua X, Ruri R, Pan D Z 2008 IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 27 p872
[8]	Zhu Z M, Li R, Hao B T, Yang Y T 2009 Chin. Phys. B 18 4995
[9]	Zhu Z M, Qian L B, Yang Y T 2009 Chin. Phys. B 18 1188
[10]	Wang J P, Hao Y, Zhang J M 2007 Chin. Phys. 16 1796
[11]	Wang J P, Hao Y 2006 Chin. Phys. 15 1621
[12]	Ge J, Jin Z, Su Y B, Cheng W, Liu X Y, Wu D X 2009 Acta. Phys. Sin. 58 8584 (in Chinese) [葛霁, 金智, 苏永波, 程伟, 刘新宇, 吴德馨 2009 物理学报 58 8584]
[13]	Cai D L, Song Z T, Li X, Chen H P, Chen X G 2011 Chin. Phys. Lett. 28 018501
[14]	Pan D Z, Minsik C, Kun Y, Ban Y C 2008 The 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, October 20-23 2008, p2232
[15]	Li X, Song Z T, Cai D L, Chen X G, Jia X L 2009 Chin. Phys. Lett. 26 128501
[16]	Ding S, Song Z T, Liu B, Zhu M, Chen X T, Chen Y F, Shen J, Fu C, Feng S L 2008 Chin. Phys. Lett. 25 3815
[17]	Ghaida R S, Doniger K, Zarkesh H P 2009 IEEE Trans. Semicond. Manufact. 22 329
[18]	Li X, Song Z T, Cai D L, Chen X G, Jia X L 2009 Chin. Phys. Lett. 26 128501
[19]	Ding S, Song Z T, Liu B, Zhu M, Chen X T, Chen Y F, Shen J, Fu C, Feng S L 2008 Chin. Phys. Lett. 25 3815
[20]	Wang J P, Hao Y 2009 Acta Phys. Sin. 58 4267 (in Chinese) [王俊平, 郝跃 2009 物理学报 58 4267]
[21]	Wang J P, Hao Y 2005 Chin. J. Semicond. 26 1514
[22]	Pan D Z, Minsik C, Kun Y 2010 Foundations and Trends in Electronic Design Automation 4 1
[23]	Pan D Z, Minsik C, Kun Y, Ban Y C 2008 The 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, October 20-23, 2008 p2232
[24]	Liu S G, Wang J P, Su Y B, Wang L 2012 Chin. Phys. B 21 098503
[25]	Wang J P, Ning P Wang L Su Y B, Liu S G, Wan G T, Wang S 2010 Open NSO Modeling for DFM 2nd International Conference on Information Engineering and Computer Science-Proceedings Wuhan, China, December 25-26, 2010 p1

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Vol. 63, Issue 12 - 2014-06-20

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