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Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt cell are investigated. The cell has a forming-free property and shows an abnormal non-polar switching behavior. A high ON/OFF resistance ratio (>105) is obtained. The resistance of the on-state is independent of cell size, which implies that a conductive filament is formed in HfO2 film. X-ray photoelectron spectroscopy is used to investigate the compositions and valences of Ni and Hf in HfO2 film for the on-state cell. The results show that there is a hybrid filament comprised of a Ni filament and an oxygen vacancy filament in the HfO2 film for the on-state.
[1] Baek I G, Kim D C, Lee, M J, Kim H J, Yim E K, Lee M S, Lee J E, Ahn S E, Seo S, Lee J H, Cha Y K, Park S O, Kim H S, Yoo I K, Chung U I, Moon J T, Ryu B I 2005 International Electron Device Meeting Washington DC, USA December 5-5, 2005 p750
[2] Waser R, Aono M 2007 Nat. Mater. 6 833
[3] Liang X F, Chen Y, Chen L, Yin J, Liu Z G 2007 Appl. Phys. Lett. 90 022508
[4] Chen L, Liu Z, Xia Y, Yin K, Gao L, Yin J 2009 Appl. Phys. Lett. 94 162112
[5] Yan Z B, Wang K F, Li S Z, Luo S J, Liu J M 2009 Appl. Phys. Lett. 95 143502
[6] Xing Z W, Wu N J, Ignatiev A 2007 Appl. Phys. Lett. 91 052106
[7] Kim K M, Choi B J, Shin Y C, Choi S, Hwang C S 2007 Appl. Phys. Lett. 91 012907
[8] Kinoshtia K, Okutani T, Tanaka H, Hinoki T, Yazawa K, Ohmi K, Kishida S 2010 Appl. Phys. Lett. 96 143505
[9] Lv H, Wang M, Wan H, Song Y, Luo W, Zhou P, Tang T, Lin Y, Huang R, Song S, Wu J G, Wu H M, Chi M H 2009 Appl. Phys. Lett. 94 213502
[10] Zhang H, Gao B, Sun B, Chen G P, Zeng L, Liu L F, Liu X Y, Lu J, Han R Q, Kang J F, Yu B 2010 Appl. Phys. Lett. 96 123502
[11] Scott J C, Bozano L D 2007 Adv. Mater. 19 1452
[12] Heremans P Gelinck G H, Muller R, Baeg K J, Kim D Y, Noh Y Y 2011 Chem. Mater. 23 341
[13] Liu X J, Sadaf S M, Son M, Shin J, Park J, Lee J, Park S, Hwang H 2011 Nanotechnology 22 475702
[14] Tran X A, Zhu W, Liu W J, Yeo Y C, Nguyen B Y, Yu H Y 2012 IEEE Electron Dev. Lett. 33 1402
[15] Chen C, Song C, Yang J, Zeng F, Pan F 2012 Appl. Phys. Lett. 100 253509
[16] Tran X A, Yu H Y, Yeo Y C, Wu L, Liu W J, Wang Z R, Fang Z, Pey K L, Sun X W, Du A Y, Nguyen B Y, Li M F 2011 IEEE Electron Dev. Lett. 32 396
[17] Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese) [邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武 2013 物理学报 62 217201]
[18] Tan T T, Chen X, Guo T T, Liu Z T 2013 Chin. Phys. Lett. 30 107302
[19] Wei X Y, Hu M, Zhang K L, Wang F, Zhao H S, Miao Y P 2013 Chin. Phys. B 22 037201
[20] Chen Y Y, Goux L, Clima S, Govoreanu B, Degraeve R, Kar G S, Fantini A, Groeseneken G, Wouters D J, Jurczak M 2013 IEEE Trans. Electron Dev. 60 1114
[21] Tran X A, Yu H Y, Gao B, Kang J F, Sun X W, Yeo Y C, Nyugen B Y, Li M F 2011 IEEE Electron Dev. Lett. 32 1290
[22] Wong Philip H. S., Lee H Y, Yu S M, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T, Tsai M J 2012 Proc. IEEE 100 1951
[23] Lin Y S, Zeng F, Tang S G, Liu H Y, Chen C, Gao S, Wang Y G, Pan F 2013 J. Appl. Phys. 113 064510
[24] Morant C, Galan L, Sanz J M 1990 Surf. Interface Anal. 112 304
[25] Zhang L L, Terauchi S Y, Azuma Y, Fujimoto T 2008 Surf. Interface Anal. 13 1701
[26] Kim K S, Winograd N 1974 Surf. Sci. 43 625
[27] Sasi B, Gopchandran K G 2007 Nanotechnology 18 115613
[28] Natile M M, Glisenti A 2002 Chem. Mater. 14 4895
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[1] Baek I G, Kim D C, Lee, M J, Kim H J, Yim E K, Lee M S, Lee J E, Ahn S E, Seo S, Lee J H, Cha Y K, Park S O, Kim H S, Yoo I K, Chung U I, Moon J T, Ryu B I 2005 International Electron Device Meeting Washington DC, USA December 5-5, 2005 p750
[2] Waser R, Aono M 2007 Nat. Mater. 6 833
[3] Liang X F, Chen Y, Chen L, Yin J, Liu Z G 2007 Appl. Phys. Lett. 90 022508
[4] Chen L, Liu Z, Xia Y, Yin K, Gao L, Yin J 2009 Appl. Phys. Lett. 94 162112
[5] Yan Z B, Wang K F, Li S Z, Luo S J, Liu J M 2009 Appl. Phys. Lett. 95 143502
[6] Xing Z W, Wu N J, Ignatiev A 2007 Appl. Phys. Lett. 91 052106
[7] Kim K M, Choi B J, Shin Y C, Choi S, Hwang C S 2007 Appl. Phys. Lett. 91 012907
[8] Kinoshtia K, Okutani T, Tanaka H, Hinoki T, Yazawa K, Ohmi K, Kishida S 2010 Appl. Phys. Lett. 96 143505
[9] Lv H, Wang M, Wan H, Song Y, Luo W, Zhou P, Tang T, Lin Y, Huang R, Song S, Wu J G, Wu H M, Chi M H 2009 Appl. Phys. Lett. 94 213502
[10] Zhang H, Gao B, Sun B, Chen G P, Zeng L, Liu L F, Liu X Y, Lu J, Han R Q, Kang J F, Yu B 2010 Appl. Phys. Lett. 96 123502
[11] Scott J C, Bozano L D 2007 Adv. Mater. 19 1452
[12] Heremans P Gelinck G H, Muller R, Baeg K J, Kim D Y, Noh Y Y 2011 Chem. Mater. 23 341
[13] Liu X J, Sadaf S M, Son M, Shin J, Park J, Lee J, Park S, Hwang H 2011 Nanotechnology 22 475702
[14] Tran X A, Zhu W, Liu W J, Yeo Y C, Nguyen B Y, Yu H Y 2012 IEEE Electron Dev. Lett. 33 1402
[15] Chen C, Song C, Yang J, Zeng F, Pan F 2012 Appl. Phys. Lett. 100 253509
[16] Tran X A, Yu H Y, Yeo Y C, Wu L, Liu W J, Wang Z R, Fang Z, Pey K L, Sun X W, Du A Y, Nguyen B Y, Li M F 2011 IEEE Electron Dev. Lett. 32 396
[17] Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese) [邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武 2013 物理学报 62 217201]
[18] Tan T T, Chen X, Guo T T, Liu Z T 2013 Chin. Phys. Lett. 30 107302
[19] Wei X Y, Hu M, Zhang K L, Wang F, Zhao H S, Miao Y P 2013 Chin. Phys. B 22 037201
[20] Chen Y Y, Goux L, Clima S, Govoreanu B, Degraeve R, Kar G S, Fantini A, Groeseneken G, Wouters D J, Jurczak M 2013 IEEE Trans. Electron Dev. 60 1114
[21] Tran X A, Yu H Y, Gao B, Kang J F, Sun X W, Yeo Y C, Nyugen B Y, Li M F 2011 IEEE Electron Dev. Lett. 32 1290
[22] Wong Philip H. S., Lee H Y, Yu S M, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T, Tsai M J 2012 Proc. IEEE 100 1951
[23] Lin Y S, Zeng F, Tang S G, Liu H Y, Chen C, Gao S, Wang Y G, Pan F 2013 J. Appl. Phys. 113 064510
[24] Morant C, Galan L, Sanz J M 1990 Surf. Interface Anal. 112 304
[25] Zhang L L, Terauchi S Y, Azuma Y, Fujimoto T 2008 Surf. Interface Anal. 13 1701
[26] Kim K S, Winograd N 1974 Surf. Sci. 43 625
[27] Sasi B, Gopchandran K G 2007 Nanotechnology 18 115613
[28] Natile M M, Glisenti A 2002 Chem. Mater. 14 4895
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