Thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells of inverted metamorphic four junction (IMM4J) solar cells under 1 MeV electron irradiation

Zhang Yan-Qing; Qi Chun-Hua; Zhou Jia-Ming; Liu Chao-Ming; Ma Guo-Liang; Tsai Hsu-Sheng; Wang Tian-Qi; Huo Ming-Xue

doi:10.7498/aps.69.20200557

Abstract

In this work, thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells for inverted metamorphic four junction (IMM4J) solar cells after being irradiated by 1 MeV electrons are investigated by using light I-V characteristic, dark I-V characteristic and spectral response. Annealing temperature range is 60–180 ℃ and annealing time is 0-180 min. The results indicate that the open-circuit voltage V_oc, short-circuit current I_sc, and maximum power P_max of two sub-cells are gradually recovered with annealing time increasing, and the rate of recovery increases with annealing temperature increasing. Besides, the recovery rate of InGaAs (1.0 eV) sub-cell is less than that of InGaAs (0.7 eV) sub-cell under the same annealing temperature and time. Double exponential model is used to fit the dark I-V curve for the key parameters (the serial resistant R_s, the parallel resistant R_sh, the diffusion current I_s1 and the recombination current I_s2). It is found that R_s, I_s1 and I_s2 of two sub-cells decrease gradually and R_sh increases during annealing and the rate of recovery increases with annealing temperature rising. However, the recovery of I_s1 and I_s2 of InGaAs(1.0 eV) are much greater than that of InGaAs(0.7 eV). The equivalent model between short-circuit current density (J_sc) and defect concentration (N) induced by irradiation and annealing is established. N changes follow the first reaction kinetics, and the rate constant follows the Arrhenius equation with the annealing temperature. Therefore, the thermal annealing activation energy of InGaAs(1.0 eV) and InGaAs(0.7 eV) sub-cells are 0.38 eV and 0.26 eV, respectively. These efforts will contribute to the IMM4J solar cells, in particular, to space-based applications.

Keywords:

inverted metamorphic four junction solar cells /
electron irradiation /
annealing effects /
activation energy of thermal annealing

Authors and contacts

1.
Space Environment Simulation and Research Infrastructure, Harbin Institute of Technology, Harbin 150001, China
2.
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
3.
Institute of Microelectronics, Chinses Academy of Sciences, Beijing 100029, China

Corresponding author: Qi Chun-Hua, qichunhua@hit.edu.cn ; Liu Chao-Ming, cmliu@hit.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11805045, 61704039, 61771167, 11775061), the State Key Laboratory for Environmental Simulation and Effects of Intense Pulsed Radiation, China (Grant Nos. SKLIPR2015, SKLIPR1912), and the Research and Innovation Fund of Harbin Institute of Technology, China (Grant Nos. HIT.NSRIF.2019007, HIT.NSRIF.20190028)

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References

[1]	Asim N, Sopian K, Ahmadi S, Saeedfar K, Alghoul M A, Saadatian O, Zaidi S H 2012 Renewable Sustainable Energy Rev. 16 5834 Google Scholar
[2]	Imaizumi M, Kawakita S, Sumita T, Takamoto T, Ohshima T Yamaguchi M 2005 Prog. Photovoltaics 13 529 Google Scholar
[3]	France R M, Geisz J F, García I, Steiner M A, McMahon W E, Friedman D J, Moriarty T E, Osterwald C, Ward J S, Duda A, Young M, Olavarria W J 2015 IEEE J. Photovoltaics 5 432 Google Scholar
[4]	宋明辉, 王笃祥, 毕京锋, 陈文浚, 李明阳, 李森林, 刘冠洲, 吴超瑜 2017 物理学报 66 188801 Google Scholar Song M H, Wang D X, Bi J F, Chen W J, Li M Y, Li S L, Liu G Z, Wu C Y 2017 Acta Phys. Sin. 66 188801 Google Scholar
[5]	Tatavarti R, Wibowo A, Martin G, Tuminello F, Youtsey C, Hillier G, Pan N 2010 IEEE 35 th Photovoltaic Specialists Conference, Honolulu, Hawaii, USA, June 20−25, 2010 p2125
[6]	卢建娅, 谭明, 杨文献, 陆书龙, 张玮, 黄健 2016 半导体光电 37 688 Lu J Y, Tan M, Yang W X, Lu S L, Zhang W, Huang J 2016 Semicond. Optoelectron. 37 688
[7]	Boisvert J, Law D, King R, Rehder E, Chiu P, Bhusari D, Fetzer C, Liu X, Hong W, Mesropian S, Woo R, Edmondson K, Cotal H, Krut D, Singer S, Wierman S, Karam N H 2013 IEEE 39th Photovoltaic Specialists Conference Tampa, Florida, USA, Jun 16−21, 2013 p2790
[8]	Zhang Y Q, Huo M X, Wu Y Y, Sun C Y, Zhao H J, Geng H B, Wang S, Liu R B, Sun Q 2017 Chin. Phys. B 26 088801 Google Scholar
[9]	Loo R, Knechtli R C, Kamath G S 1978 IEEE 13th Photovoltaic Specialists Conference Washington DC, USA, Jun 5, 1978 p562
[10]	Loo R Y, Kamath G S, Li S S 1990 IEEE Trans. Electron Devices 37 485 Google Scholar
[11]	Loo R Y, Kamath G S 1980 IEEE 14th Photovoltaic Specialists Conference San Diego, California, USA, January 7−10, 1980 p1087
[12]	Heinbockel J H, Conway E J, Walker G H 1980 IEEE 14th Photovoltaic Specialists Conference San Diego, California, USA, January 7−10, 1980 p1085
[13]	Walker G H, Conway E J 1978 J. Electrochem. Soc. 125 676 Google Scholar
[14]	齐佳红, 胡建民, 盛延辉, 吴宜勇, 徐建文, 王月媛, 杨晓明, 张子锐, 周扬 2015 物理学报 64 108802 Google Scholar Qi J H, Hu J M, Sheng Y H, Wu Y Y, Xu J W, Wang Y Y, Yang X M, Zhang Z R, Zhou Y 2015 Acta Phys. Sin. 64 108802 Google Scholar
[15]	Xiang X B, Du W H, Liao X B, Chang X L 2001 Chin. J. Semicond. 22 710
[16]	Yamaguchi M, Okuda T, Taylor S J, Takamoto T, Ikeda E, Kurita H 1997 Appl. Phys. Lett. 70 1566 Google Scholar
[17]	Sasaki T, Arafune K, Metzger W, Romero M J, Jones K, Tassim M A, Ohshita Y, Yamaguchi M 2009 Sol. Energy Mater. Sol. Cells 93 936 Google Scholar
[18]	Angelis N D, Bourgoin J C, Takamoto T, Khan A, Yamaguchi M 2001 Sol. Energy Mater. Sol. Cells 66 495 Google Scholar
[19]	Bourgoin J C, Zazoui M 2002 Semicond. Sci. Technol. 17 453 Google Scholar
[20]	Bourgoin J C, Angelis N D 2001 Sol. Energy Mater. Sol. Cells 66 467 Google Scholar
[21]	Amekura H, Kishimoto N, Saito T 1995 J. Appl. Phys. 77 4984 Google Scholar
[22]	Kaminski A, Marchand J J, Fave A, Laugier A 1997 IEEE 26th Photovoltaic Specialists Conference Anaheim, California, USA, September 29−October 3, 1997 p203

Cited By

图 1 InGaAs (1.0 eV)和InGaAs (0.7 eV) 子电池结构示意图　(a) InGaAs (1.0 eV); (b) InGaAs (0.7 eV)

Figure 1. Configurations of the InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells: (a) InGaAs (1.0 eV); (b) InGaAs (0.7 eV).

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图 2 InGaAs(1.0 eV)和InGaAs(0.7 eV)子电池I-V特性曲线　(a) InGaAs (1.0 eV); (b) InGaAs (0.7 eV)

Figure 2. IV curves of the InGaAs(1.0 eV) and InGaAs (0.7 eV) sub-cells: (a) InGaAs(1.0 eV); (b) InGaAs (0.7 eV).

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图 3 1 MeV电子在InGaAs (1.0 eV)和InGaAs (0.7 eV)子电池中运动轨迹　(a) InGaAs (1.0 eV); (b) InGaAs(0.7 eV)

Figure 3. The trajectory of 1 MeV electron in InGaAs (1.0 eV) and InGaAs (0.7 eV) sub cells: (a) InGaAs(1.0 eV) ; (b) InGaAs (0.7 eV).

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图 4 AFM测试1 MeV电子辐照InGaAs子电池前后表面形貌及横向剖面对比图　(a)未辐照子电池; (b)辐照1 × 10¹⁵ cm^–2后子电池; (c)横向剖面图

Figure 4. Surface morphology and cross section of InGaAs sub-cell before and after 1 MeV electron irradiation by AFM: (a) The unirradiated sub-cell; (b) the sub-cell after 1 × 10¹⁵ cm^–2 electron irradiation; (c) the cross section comparison.

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图 5 不同温度退火不同时间下两种InGaAs子电池V_oc, I_sc和P_max变化曲线

Figure 5. Normalized V_oc, I_sc and P_max curves of InGaAs sub-cells anneal at different annealing temperatures for different times.

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图 6 InGaAs (1.0 eV)子电池不同温度退火不同时间的EQE曲线

Figure 6. EQE curves of InGaAs (1.0 eV) sub-cells anneal at different annealing temperatures for different times.

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图 7 不同温度退火不同时间的InGaAs (0.7 eV)子电池EQE曲线

Figure 7. EQE curves of InGaAs (0.7 eV) sub-cells anneal at different annealing temperatures for different times.

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图 8 两种InGaAs子电池退火不同时间拟合所得R_s, R_sh, I_s1和I_s2的变化曲线图

Figure 8. R_s, R_sh, I_s1 and I_s2curves of InGaAs sub-cells annealing at different temperatures.

DownLoad: Full-Size Img PowerPoint

图 9 缺陷浓度变化系数对数ln(α)与温度倒数(1/T)的关系曲线

Figure 9. Curve of logarithm of the defect concentration change coefficient (ln(α)) with reciprocal of temperature (1/T).

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表 1 1 MeV辐照前后InGaAs(1.0 eV)子电池的V_oc, I_sc和P_max

Table 1. V_oc, I_sc and P_maxof InGaAs(1.0 eV) sub-cells before and after electron irradiated.

InGaAs (1.0 eV)	V_oc/V	I_sc/mA	P_max/mW
未辐照	0.5089	18.25	7.30
辐照后	0.3093	11.57	3.56
剩余率	60.8%	63.4%	48.8%

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表 2 1 MeV辐照前后InGaAs (0.7 eV)子电池的V_oc, I_sc和P_max

Table 2. V_oc, I_sc and P_maxof InGaAs (0.7 eV) sub-cells before and after electron irradiated.

InGaAs (0.7 eV)	V_oc/V	I_sc/mA	P_max/mW
未辐照	0.2529	11.660	1.940
辐照后	0.1428	6.950	0.653
剩余率	56.5%	59.6%	33.7%

DownLoad: CSV

表 3 辐照前后InGaAs (1.0 eV)子电池R_s, R_sh, I_s1和I_s2

Table 3. R_s, R_sh, I_s1 and I_s2of InGaAs (1.0 eV) sub-cells before and after electron irradiated.

InGaAs (1.0 eV)	R_s/Ω	R_sh/Ω	I_s1/A	I_s2/A
未辐照	1.5	4.3 × 10⁴	3.6 × 10^–7	4.2 × 10^–7
辐照后	6.2	5.3 × 10³	6.4 × 10^–5	6.5 × 10^–5
剩余率	4.13%	0.123%	178%	155%

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表 4 辐照前后InGaAs (0.7 eV)子电池的R_s, R_sh, I_s1和I_s2

Table 4. R_s, R_sh, I_s1 and I_s2of InGaAs (0.7 eV) sub-cells before and after electron irradiated.

InGaAs (0.7 eV)	R_s/Ω	R_sh/Ω	I_s1/A	I_s2/A
未辐照	2.9	1.3 × 10⁴	2.7 × 10^–5	3.3 × 10^–5
辐照后	7.5	1.4 × 10³	1.4 × 10^–4	1.9 × 10^–4
剩余率	2.59%	0.108%	5.19%	5.76%

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表 5 辐照及热退火过程中InGaAs (1.0 eV)子电池J_sc变化

Table 5. J_sc of InGaAs (1.0 eV) sub-cell in irradiation and thermal annealing.

InGaAs (1.0 eV) 退火温度	未辐照J_sc/mA)	退火时间 J_sc/min·mA^–1
InGaAs (1.0 eV) 退火温度	未辐照J_sc/mA)	0	3	5	10	15	30	60	120	180
60 ℃	13.57	10.26	10.26	10.28	10.29	10.31	10.38	10.41	10.48	10.53
90 ℃	13.31	10.19	10.21	10.23	10.28	10.30	10.34	10.39	10.41	10.46
120 ℃	13.75	10.41	10.46	10.49	10.57	10.65	10.78	10.79	10.81	10.84
150 ℃	13.51	10.31	10.43	10.59	10.84	11.07	11.68	11.73	11.83	11.98
180 ℃	13.55	10.38	10.72	10.96	11.46	11.90	12.50	12.67	12.85	12.88

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表 6 辐照及热退火过程中InGaAs (0.7 eV)子电池J_sc变化

Table 6. J_sc of InGaAs (0.7 eV) sub-cell in irradiation and thermal annealing.

InGaAs (0.7 eV) 退火温度	未辐照 J_sc/mA	退火时间 J_sc/min·mA^–1
InGaAs (0.7 eV) 退火温度	未辐照 J_sc/mA	0	3	5	10	15	30	60	120	180
60 ℃	8.17	6.27	6.27	6.27	6.31	6.32	6.36	6.40	6.45	6.47
90 ℃	8.33	6.46	6.47	6.48	6.53	6.53	6.55	6.59	6.63	6.67
120 ℃	8.28	6.19	6.21	6.22	6.24	6.28	6.33	6.35	6.42	6.44
150 ℃	8.24	6.15	6.18	6.21	6.25	6.29	6.45	6.71	6.79	6.82
180 ℃	8.25	6.2	6.25	6.3	6.44	6.51	6.8	7.34	7.59	7.69

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表 7 不同退火温度下InGaAs (1.0 eV)和InGaAs (0.7 eV)子电池缺陷浓度变化系数α拟合值

Table 7. Fitting value of the variation defect concentration coefficient(α) of InGaAs sub-cell at different annealing temperatures.

退火温度	α[InGaAs (1.0 eV)/s^–1]	α[InGaAs (0.7 eV)/s^–1]
60 ℃	1.74 × 10^–3	1.47 × 10^–3
90 ℃	4.09 × 10^–3	2.43 × 10^–3
120 ℃	7.33 × 10^–3	4.70 × 10^–3
150 ℃	2.52 × 10^–2	7.38 × 10^–3
180 ℃	5.72 × 10^–2	1.82 × 10^–2

DownLoad: CSV

[1]	Asim N, Sopian K, Ahmadi S, Saeedfar K, Alghoul M A, Saadatian O, Zaidi S H 2012 Renewable Sustainable Energy Rev. 16 5834 Google Scholar
[2]	Imaizumi M, Kawakita S, Sumita T, Takamoto T, Ohshima T Yamaguchi M 2005 Prog. Photovoltaics 13 529 Google Scholar
[3]	France R M, Geisz J F, García I, Steiner M A, McMahon W E, Friedman D J, Moriarty T E, Osterwald C, Ward J S, Duda A, Young M, Olavarria W J 2015 IEEE J. Photovoltaics 5 432 Google Scholar
[4]	宋明辉, 王笃祥, 毕京锋, 陈文浚, 李明阳, 李森林, 刘冠洲, 吴超瑜 2017 物理学报 66 188801 Google Scholar Song M H, Wang D X, Bi J F, Chen W J, Li M Y, Li S L, Liu G Z, Wu C Y 2017 Acta Phys. Sin. 66 188801 Google Scholar
[5]	Tatavarti R, Wibowo A, Martin G, Tuminello F, Youtsey C, Hillier G, Pan N 2010 IEEE 35 th Photovoltaic Specialists Conference, Honolulu, Hawaii, USA, June 20−25, 2010 p2125
[6]	卢建娅, 谭明, 杨文献, 陆书龙, 张玮, 黄健 2016 半导体光电 37 688 Lu J Y, Tan M, Yang W X, Lu S L, Zhang W, Huang J 2016 Semicond. Optoelectron. 37 688
[7]	Boisvert J, Law D, King R, Rehder E, Chiu P, Bhusari D, Fetzer C, Liu X, Hong W, Mesropian S, Woo R, Edmondson K, Cotal H, Krut D, Singer S, Wierman S, Karam N H 2013 IEEE 39th Photovoltaic Specialists Conference Tampa, Florida, USA, Jun 16−21, 2013 p2790
[8]	Zhang Y Q, Huo M X, Wu Y Y, Sun C Y, Zhao H J, Geng H B, Wang S, Liu R B, Sun Q 2017 Chin. Phys. B 26 088801 Google Scholar
[9]	Loo R, Knechtli R C, Kamath G S 1978 IEEE 13th Photovoltaic Specialists Conference Washington DC, USA, Jun 5, 1978 p562
[10]	Loo R Y, Kamath G S, Li S S 1990 IEEE Trans. Electron Devices 37 485 Google Scholar
[11]	Loo R Y, Kamath G S 1980 IEEE 14th Photovoltaic Specialists Conference San Diego, California, USA, January 7−10, 1980 p1087
[12]	Heinbockel J H, Conway E J, Walker G H 1980 IEEE 14th Photovoltaic Specialists Conference San Diego, California, USA, January 7−10, 1980 p1085
[13]	Walker G H, Conway E J 1978 J. Electrochem. Soc. 125 676 Google Scholar
[14]	齐佳红, 胡建民, 盛延辉, 吴宜勇, 徐建文, 王月媛, 杨晓明, 张子锐, 周扬 2015 物理学报 64 108802 Google Scholar Qi J H, Hu J M, Sheng Y H, Wu Y Y, Xu J W, Wang Y Y, Yang X M, Zhang Z R, Zhou Y 2015 Acta Phys. Sin. 64 108802 Google Scholar
[15]	Xiang X B, Du W H, Liao X B, Chang X L 2001 Chin. J. Semicond. 22 710
[16]	Yamaguchi M, Okuda T, Taylor S J, Takamoto T, Ikeda E, Kurita H 1997 Appl. Phys. Lett. 70 1566 Google Scholar
[17]	Sasaki T, Arafune K, Metzger W, Romero M J, Jones K, Tassim M A, Ohshita Y, Yamaguchi M 2009 Sol. Energy Mater. Sol. Cells 93 936 Google Scholar
[18]	Angelis N D, Bourgoin J C, Takamoto T, Khan A, Yamaguchi M 2001 Sol. Energy Mater. Sol. Cells 66 495 Google Scholar
[19]	Bourgoin J C, Zazoui M 2002 Semicond. Sci. Technol. 17 453 Google Scholar
[20]	Bourgoin J C, Angelis N D 2001 Sol. Energy Mater. Sol. Cells 66 467 Google Scholar
[21]	Amekura H, Kishimoto N, Saito T 1995 J. Appl. Phys. 77 4984 Google Scholar
[22]	Kaminski A, Marchand J J, Fave A, Laugier A 1997 IEEE 26th Photovoltaic Specialists Conference Anaheim, California, USA, September 29−October 3, 1997 p203

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