Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure

Huangfu Xia-Hong; Liu Shuang-Fei; Xiao Jia-Jun; Zhang Bei; Peng Xin-Cun

doi:10.7498/aps.70.20201829

Abstract

GaInAsSb quaternary alloys have attracted much interest in infrared optoelectronic applications due to their versatility in a large range of energy gaps from 0.296 eV to 0.726 eV when lattice matches to GaSb wafer. However, due to the high intrinsic carrier concentration and Auger recombination, GaInAsSb p-n junctions typically are characterized by high dark current density at room temperature and need to be operated at low temperature to obtain high optoelectronic performance. In this work, a front surface wide-bandgap semiconductor nano pillar array (NPA) and a high reflective metal back surface reflector (BSR) are designed to modulate optoelectronic performances of GaInAsSb p-n junction. The optical and optoelectronic characteristics are analyzed by the finite difference time domain simulation and the numerical solution of carrier transport equations, respectively. It shows that the NPA-BSR structure can trigger Mie-type resonance, Wood-Rayleigh anomaly effect and Fabry-Perot resonance, which can be used to trap the light efficiently in an ultrathin GaInAsSb film. Owing to these nanophotonic effects, the average light absorption of ~90% can be obtained in 1.0–2.3 μm infrared waveband for 1μm Ga_0.84In_0.16As_0.14Sb_0.86. It also shows that the Auger recombination can be suppressed with thickness decreasing which leads the carrier collection efficiency to increase and the dark current density to decrease. Theoretical results show that the carrier collection efficiency of ~99% and dark current density of ~5×10^–6 A/cm² can be obtained for the 1 μm Ga_0.84In_0.16As_0.14Sb_0.86 p-n junction. With these unique optoelectronic properties, the NPA-BSR nanophotonic structure can become a very promising method to realize the high performance ultrathin GaInAsSb infrared optoelectronic devices.

Keywords:

Authors and contacts

1.
College of Information Engineering, East China University of Technology, Nanchang 330013, China
2.
Engineering Research Center of New Energy Technology and Equipment of Jiangxi Province, East China University of Technology, Nanchang 330013, China

Corresponding author: Peng Xin-Cun, xcpeng@ecit.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62061001, 61204071) and the Jiangxi Provincial Natural Science Foundation, China (Grant No. 20202BAB202013)

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References

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[4]	Lou Y Y, Zhang X L, Huang A B, Wang Y 2018 Sol. Energ. Mat. Sol. C. 172 124
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[25]	Tian Y, Chua S J, Jin Y X 2003 Microelectron. J. 34 304
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Cited By

图 1 双面光调控Ga_0.84In_0.16As_0.14Sb_0.86 p-n结　(a)材料结构; (b)三维FDTD光学仿真设置

Figure 1. Illustration of the two-side light modulation structured Ga_0.84In_0.16As_0.14Sb_0.86 p-n junction: (a) Material structure; (b) cross-section of the three-dimensional FDTD optical simulation setup.

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图 2 纳米柱直径D对Ga_0.84In_0.16As_0.14Sb_0.86 p-n结光学特性的影响　(a)表面反射谱; (b)有源区光吸收谱

Figure 2. Effects of the nanopillar diameter D on the optical properties of the Ga_0.84In_0.16As_0.14Sb_0.86 p-n junction: (a) Surface reflectance spectrum; (b) absorption spectrum in active region.

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图 3 纳米柱填充因子F对Ga_0.84In_0.16As_0.14Sb_0.86 p-n结有源区的光吸收谱的影响

Figure 3. Effects of the nanopillar fill factor F on the absorption of the Ga_0.84In_0.16As_0.14Sb_0.86 p-n junction active region.

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图 4 不同光学结构下Ga_0.84In_0.16As_0.14Sb_0.86 p-n结有源区的光吸收谱　(a)NPA和BSR双面光调控结构; (b)NPA单面光调控结构; (c)表面1/4波长Si₃N₄增透膜和BSR双面光调控结构; (d)表面1/4波长Si₃N₄增透膜单面光调控结构. 其中NPA尺寸为H = 300 nm, D = 540 nm, F = 0.6, Si₃N₄增透膜的中心波长设计为1.6 µm

Figure 4. Absorption spectrums of the Ga_0.84In_0.16As_0.14Sb_0.86 p-n junction active region under different optical structures: (a) NPA-BSR two-side light modulation structure; (b) NPA one-side light modulation structure; (c) surface λ/4 Si₃N₄ anti-reflection film and BSR two-side light modulation structure; (d) surface λ/4 Si₃N₄ anti-reflection film one-side light modulation structure. The NPA geometry parameters are set as H = 300 nm, D = 540 nm and F = 0.6, central wavelength of the λ/4 Si₃N₄ anti-reflection film is set as 1.6 µm.

DownLoad: Full-Size Img PowerPoint

图 5 室温(300 K)下Ga_0.84In_0.16As_0.14Sb_0.86 p-n结的IQE

Figure 5. IQE for Ga_0.84In_0.16As_0.14Sb_0.86 p-n junction diode at 300 K.

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图 6 不同复合参数下载流子收集效率谱C(λ)随波长λ和有源区总厚度L的变化　(a) τ₀ =1 µs, S_F = S_B = 10² cm/s; (b) τ₀ =10^–3 µs, S_F = S_B = 10² cm/s; (c) τ₀ =1 µs, S_F = 10⁶ cm/s, S_B = 10² cm/s; (d) τ₀ =1 µs, S_F = 10² cm/s, S_B = 10⁶ cm/s. τ₀为SRH复合本征寿命, S_F和S_B分别为有源区前后表面复合速度

Figure 6. Dependence of the carrier collection efficiency spectrums C(λ) on λ and active region thickness L for different carrier recombination parameters: (a) τ₀ =1 µs, S_F = S_B = 10² cm/s; (b) τ₀ =10^–3 µs, S_F = S_B = 10² cm/s; (c) τ₀ =1 µs, S_F = 10⁶ cm/s, S_B = 10² cm/s; (d) τ₀ =1 µs, S_F = 10² cm/s, S_B = 10⁶ cm/s.

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图 7 复合参数对不同厚度有源区量子效率谱QE(λ)的影响　(a) L = 1 µm; (b) L = 6 µm

Figure 7. Effects of the carrier recombination parameters on the quantum efficiency spectrums for different active region thickness L: (a) L = 1 µm; (b) L = 6 µm.

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图 8 各种复合机制所决定的扩散暗电流密度随有源区厚度L的变化

Figure 8. Dependence of the diffusion dark current densities on active region thickness L.

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图 9 室温下Ga_0.84In_0.16As_0.14Sb_0.86 p-n结的J_0d随复合参数和L的变化

Figure 9. Dependence of the J_0d on carrier recombination parameters and L for Ga_0.84In_0.16As_0.14Sb_0.86 p-n junction at room temperature.

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表 1 室温(300 K)下Ga_0.84In_0.16As_0.14Sb_0.86 p-n结有源区的结构和物理参数^[27-29]

Table 1. Structure and physical parameters of the Ga_0.84In_0.16As_0.14Sb_0.86 p-n junction at room temperature (300 K)^[27-29].

材料	结构参数		物理参数
材料	厚度/µm	掺杂浓度/cm^–3	直接复合系数/(cm³·s^–1)	俄歇复合系数/(cm⁶·s^–1)	SRH本征复合寿命/µs	表面复合速度/(cm·s^–1)	少子迁移率/(cm²·V·s^–1)
n型层	0.2	1 × 10¹⁷	1 × 10^–10	C_n = 1 × 10^–27	τ₀ = 10^–3—1	S_F = 0—10⁶	µ_h = 618
p型层	L—0.2	1 × 10¹⁷	1 × 10^–10	C_p = 2 × 10^–28	τ₀ = 10^–3—1	S_B = 0—10⁶	µ_e = 5162

DownLoad: CSV

[1]	刘超魏志鹏安宁何斌太刘鹏程刘国军 2014 物理学报 63 248102 Google Scholar Liu C, Wei Z P, An N, He B T, Liu P C, Liu G J 2014 Acta Phys. Sin. 63 248102 Google Scholar
[2]	Mitsuhara M, Ohiso Y, Matsuzaki H 2020 J. Cryst. Growth 535 125551 Google Scholar
[3]	Hao H Y, Wang G W, Han X, Jiang D W, Sun, Y Y, Guo C Y, Xiang W, Xu Y Q and Niu Z C 2018 AIP Adv. 8 095106 Google Scholar
[4]	Lou Y Y, Zhang X L, Huang A B, Wang Y 2018 Sol. Energ. Mat. Sol. C. 172 124
[5]	Liu Q, Marshall A, Kirer A 2019 Materials (Basel) 12 1743 Google Scholar
[6]	Wang Y, Lou Y Y 2015 Renew. Energ. 75 8 Google Scholar
[7]	You M H, Sun Q X, Yin L P, Fan J J, Liang X M, Li X, Yu X L, Li S J, Liu J S 2016 J. Nanomater. 2016 393502
[8]	Liang B L, Chen D Y, Wang B, Kwasniewski T A, Wang Z G 2010 IEEE T. Electron Dev. 57 361 Google Scholar
[9]	Rothmayr F, Pfenning A, Kistner C, Koeth J, Knebl G, Schade A, Krueger S, Worschech L, Hartmann F, Höfling S 2018 Appl. Phys. Lett. 112 161107 Google Scholar
[10]	Peng X C, Guo X, Zhang B L, Li X P, Zhao X W, Dong X, Zheng W, Du G T 2010 Infrared Phys. Techn. 53 37 Google Scholar
[11]	秦飞飞张海明王彩霞郭聪张晶晶 2014 物理学报 63 198802 Google Scholar Qin F F, Zhang H M, Wang C X, Guo C, Zhang J J 2014 Acta Phys. Sin. 63 198802 Google Scholar
[12]	El-Batawy Y M, Deen M J 2003 Proc. SPIE 4999 363 Google Scholar
[13]	Jiang A Q, Osamu Y, Chen L Y 2020 SCI REP-UK 10 12780 Google Scholar
[14]	Chen H L, Cattoni A, Lépinau R D, Walker A W, Höhn O, Lackner D, Siefer G, Faustini M, Vandamme N, Goffard J, Behaghel B, Dupuis C, Bardou N, Dimroth F, Collin S 2019 Nat. energy 4 761 Google Scholar
[15]	Amalathas A P, Alkaisi M M 2019 Micromachines 10 619 Google Scholar
[16]	Proise F, Joudrier A, Pardo F, Pelouard J, Guillemoles J 2018 Opt. Express 26 A806 Google Scholar
[17]	Yang Z H, Gao P Q, Zhang C, Li X F, Ye J C 2016 SCI REP-UK 6 30503 Google Scholar
[18]	Kuznetsov A I, Miroshnichenko A E, Brongersma M L, Kivshar Y S, Luk’yanchuk B 2016 Science 354 aag2472 Google Scholar
[19]	Jahani S, Jacob Z 2016 Nat. Nanotechnol. 11 23 Google Scholar
[20]	Behaghel B, Tamaki R, Vandamme N, Watanabe K, Dupuis C, Bardou N, Sodabanlu H, Cattoni A, Okada Y, Sugiyama M, Collin S, Guillemoles J 2015 Appl. Phys. Lett. 106 081107 Google Scholar
[21]	Peng X C, Wang Z D, Liu Y, Manos D M, Poelker M, Stutzman M, Tang B, Zhang S K, Zou J J 2019 Phys. Rev. Appl. 12 064002 Google Scholar
[22]	彭新村, 王智栋, 曾梦丝, 刘云, 邹继军, 朱志甫, 邓文娟 2019 无机材料学报 34 734 Google Scholar Peng X C, Wang Z D, Zeng M S, Liu Y, Zou J J, Zhu Z F, Deng W J 2019 J. Inorg. Mater. 34 734 Google Scholar
[23]	Wang C A, Shiau D A, Murphy P G, O'Brien P W, Huang R K, Connors M K, Anderson A C, Donetsky D, Anikeev S, Belenky G, Depoy D M, Nichols G 2004 J. Electron. Mater. 33 213 Google Scholar
[24]	彭新村王智栋邓文娟朱志甫邹继军张益军 2020 物理学报 69 068501 Google Scholar Peng X C, Wang Z D, Deng W J, Zhu Z F, Zou J J, Zhang Y J 2020 Acta Phys. Sin. 69 068501 Google Scholar
[25]	Tian Y, Chua S J, Jin Y X 2003 Microelectron. J. 34 304
[26]	Peng X C, Poelker M, Stutzman M, Tang B, Zhang S K, Zou J J 2020 Opt. Express 28 860 Google Scholar
[27]	Wang Y, Chen N F, Zhang X W, Huang T M, Yin Z G, Wang Y S, Zhang H 2010 Sol. Energ. Mat. Sol. C. 94 1704 Google Scholar
[28]	Tang L L, Fraas L M, Liu Z M, Xu C, Chen X Y 2016 IEEE T. Electron Dev. 63 3591 Google Scholar
[29]	Dashiell M W, Beausang J F, Ehsani H, Nichols G J, Depoy D M, Danielson L R, Talamo P, Rahner K D, Brown E J, Burger S R, Fourspring P M, Topper W F, Jr., Baldasaro P F, Wang C A, Huang R K, Connors M K, Turner G W, Shellenbarger Z A, Taylor G, Li J Z, Martinelli R, Donetski D, Anikeev S, Belenky G L, Luryi S 2006 IEEE T. Electron Dev. 53 2879 Google Scholar
[30]	Groep J, Polman A 2013 Opt. Express 21 26285 Google Scholar
[31]	Wang Z Y, Zhang R J, Wang S Y, Lu M, Chen X, Zheng Y X, Chen L Y, Ye Z, Wang C Z, Ho K M 2015 SCI REP-UK 5 7810 Google Scholar
[32]	Wang C A 2004 AIP Conf. Proc. 738 255 Google Scholar

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