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Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure

Huangfu Xia-Hong Liu Shuang-Fei Xiao Jia-Jun Zhang Bei Peng Xin-Cun

Huangfu Xia-Hong, Liu Shuang-Fei, Xiao Jia-Jun, Zhang Bei, Peng Xin-Cun. Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure. Acta Phys. Sin., 2021, 70(11): 118501. doi: 10.7498/aps.70.20201829
Citation: Huangfu Xia-Hong, Liu Shuang-Fei, Xiao Jia-Jun, Zhang Bei, Peng Xin-Cun. Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure. Acta Phys. Sin., 2021, 70(11): 118501. doi: 10.7498/aps.70.20201829

Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure

Huangfu Xia-Hong, Liu Shuang-Fei, Xiao Jia-Jun, Zhang Bei, Peng Xin-Cun
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  • GaInAsSb quaternary alloys have attracted much interest in infrared optoelectronic applications due to their versatility in a large range of energy gaps from 0.296 eV to 0.726 eV when lattice matches to GaSb wafer. However, due to the high intrinsic carrier concentration and Auger recombination, GaInAsSb p-n junctions typically are characterized by high dark current density at room temperature and need to be operated at low temperature to obtain high optoelectronic performance. In this work, a front surface wide-bandgap semiconductor nano pillar array (NPA) and a high reflective metal back surface reflector (BSR) are designed to modulate optoelectronic performances of GaInAsSb p-n junction. The optical and optoelectronic characteristics are analyzed by the finite difference time domain simulation and the numerical solution of carrier transport equations, respectively. It shows that the NPA-BSR structure can trigger Mie-type resonance, Wood-Rayleigh anomaly effect and Fabry-Perot resonance, which can be used to trap the light efficiently in an ultrathin GaInAsSb film. Owing to these nanophotonic effects, the average light absorption of ~90% can be obtained in 1.0–2.3 μm infrared waveband for 1μm Ga0.84In0.16As0.14Sb0.86. It also shows that the Auger recombination can be suppressed with thickness decreasing which leads the carrier collection efficiency to increase and the dark current density to decrease. Theoretical results show that the carrier collection efficiency of ~99% and dark current density of ~5×10–6 A/cm2 can be obtained for the 1 μm Ga0.84In0.16As0.14Sb0.86 p-n junction. With these unique optoelectronic properties, the NPA-BSR nanophotonic structure can become a very promising method to realize the high performance ultrathin GaInAsSb infrared optoelectronic devices.
      PACS:
      85.60.Bt(Optoelectronic device characterization, design, and modeling)
      68.55.ag(Semiconductors)
      63.22.Kn(Clusters and nanocrystals)
      Corresponding author: Peng Xin-Cun, xcpeng@ecit.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62061001, 61204071) and the Jiangxi Provincial Natural Science Foundation, China (Grant No. 20202BAB202013)

    GaxIn1–xAs1–ySby四元半导体与商业化GaSb衬底晶格匹配时理论上可以通过调节组分实现禁带宽度(Eg)在0.726—0.296 eV范围内变化, 相应工作波段范围为1.7—4.2 µm[1], 一定程度上覆盖了1—3 µm和3—5 µm两个大气吸收窗口, 在光纤通信、红外成像、环境检测、空间技术、光伏发电等方面具有广阔应用前景[2-5]. 室温截止波长约2.3 µm的Ga0.84In0.16As0.14Sb0.86 (Eg ~ 0.53 eV)在四元混溶隙附近, 采用金属有机化合物化学气相沉积(metal-organic chemical vapor deposition, MOCVD)、分子束外延(molecular beam epitaxy, MBE)等非平衡方法可以获得高质量外延层, 基于此的p-n结光伏型器件在红外光电探测和热光伏发电等应用领域被广泛关注[6-9].

    量子效率(QE)和暗电流密度(J0)是决定p-n结应用性能的重要参数, 前者主要受光吸收率和光生载流子输运效率的影响, 后者主要与载流子输运特性相关. 较薄的p-n结有源区可以获得高输运效率和较低的暗电流, 而为了充分吸收入射光又需要有足够的有源区厚度. 窄禁带Ga0.84In0.16As0.14Sb0.86半导体的本征载流子浓度和俄歇复合系数较高, 室温下扩散暗电流密度较高, 降低有源区厚度可以降低俄歇复合对暗电流的贡献[10]. 因此, 通过合理的设计以达到“光厚电薄”的效果可以有效提升光电器件的光电转换性能[11]. 背面周期性布拉格反射结构产生的驻波共振可以增强薄有源区的光吸收, 但这种结构较复杂, 工艺成本高[12]. 在Lambert-Beer定律限制下, 表面光学膜提升光吸收的能力有限, 多层光学膜的工艺难度也比较大[13].

    在太阳能电池中, 表面亚波长纳米光子学结构和背面高反射率金属膜被用于对p-n结有源区进行双面光调控, 将入射光限制在薄有源区充分吸收, 从而实现了高转换效率的超薄光电转换器件[14-20]. 而纳米光子学结构在红外光电器件中的应用较少, 目前尚未见其在GaxIn1–xAs1–ySby器件中的应用报道. 本文拟引入晶格匹配的纳米柱阵列(nano pillar array, NPA)结构宽带隙AlAs0.06Sb0.96 (Eg~1.65 eV)作为表面窗口层, 并在背面引入高反射率金属作为背面反射层(back surface reflector, BSR), 对Ga0.84In0.16As0.14Sb0.86 p-n结进行双面光调控, 通过理论仿真设计并优化材料结构, 利用纳米光子学共振效应增强红外光电转换效率.

    图1(a)为所设计的双面光调控p-n结器件材料结构. Ga0.84In0.16As0.14Sb0.86 p-n结为光电转换有源区, 其前后表面分别引入宽带隙AlAs0.06Sb0.96窗口层和GaSb背面电场层(back surface field, BSF)以降低表面载流子复合速度. 双面光调控结构包括窗口层表面正方形排列的NPA和铝(Al)BSR, 前者可以采用纳米压印[21]、自组装纳米球掩膜[22]等方法刻蚀制备在窗口层表面, 后者可以采用晶圆键合方法制备[23], 这些工艺与半导体制程工艺相兼容, 已在多种半导体器件中成功应用. NPA制备在宽带隙窗口层表面, 避免刻蚀工艺对有源区电学性能的影响. 在与GaSb衬底晶格匹配的半导体中, AlAs0.06Sb0.96的室温禁带宽度最大, 选用其制作表面窗口层和NPA既可以获得较高的材料生长质量, 还可以实现较低的寄生光吸收. 在上述NPA-BSR双面光调控结构中, 亚波长NPA可以激发光学共振, BSR可以将透射光反射回有源区并激发驻波共振, 利用这些光学效应可以将光有效限制在较薄的p-n结有源区, 从而提升光电性能.

    图 1 双面光调控Ga0.84In0.16As0.14Sb0.86 p-n结 (a)材料结构; (b)三维FDTD光学仿真设置\r\nFig. 1. Illustration of the two-side light modulation structured Ga0.84In0.16As0.14Sb0.86 p-n junction: (a) Material structure; (b) cross-section of the three-dimensional FDTD optical simulation setup.
    图 1  双面光调控Ga0.84In0.16As0.14Sb0.86 p-n结 (a)材料结构; (b)三维FDTD光学仿真设置
    Fig. 1.  Illustration of the two-side light modulation structured Ga0.84In0.16As0.14Sb0.86 p-n junction: (a) Material structure; (b) cross-section of the three-dimensional FDTD optical simulation setup.

    材料的光学结构和尺寸是影响光学特性的主要因素, 本文采用时域有限差分(finite different time domain, FDTD)方法对图1(a)的NPA-BSR双面光调控p-n结器件进行光学仿真[24]. 图1(b)为FDTD仿真设置, 入射光从器件正面沿z轴负方向垂直入射, AlAs0.06Sb0.96纳米柱在xy平面以二维正方形排列, 仿真区域为以纳米柱为中心的正方形重复单元(图中红框所示区域), 在x-y平面设置周期性边界条件, 在z轴方向设置完美匹配层边界条件, 光学结构参数包括纳米柱直径(D)、高度(H)、周期(P)和各光学功能层的厚度, 仿真所采用的网格精度为2 nm. AlAs0.06Sb0.96窗口层、GaSb BSF和Al BSR的厚度设定为图1(a)中的固定值, 重点分析NPA的结构参数和p-n结有源区总厚度(L)的影响. 在光源上方设置反射率监视器可以获得入射光的表面反射率(R(λ)). 在p-n结有源区的前后表面分别设置光功率监视器, 可以获得进入和透过有源区的光功率占总入射光功率的比率(即图1(b)中的T1(λ)和T2(λ)), 从而计算出有源区光吸收率为A(λ) = T1(λ)–T2(λ).

    Ga0.84In0.16As0.14Sb0.86 p-n结的电学性能通过求解载流子输运方程和电流方程进行计算, 具体如下[25]:

    qμe(nE)qDe2(n)=q(ReG),
    (1)
    qμh(pE)qDh2(p)=q(RhG),
    (2)
    Je=qμenE+qDee(n),
    (3)
    Jh=qμhpEqDh(p),
    (4)

    其中, (1)式、(3)式分别为电子连续性方程和电流密度方程, (2)式、(4)式分别为空穴连续性方程和电流密度方程. n, p分别为电子和空穴的浓度, µe, µh分别为电子和空穴迁移率, De, Dh分别为电子和空穴扩散系数, Re, Rh分别为电子和空穴的复合率, q, E分别为电子电荷、电场强度. G为光生载流子产生率. 在Ga0.84In0.16As0.14Sb0.86有源区设置三维场分布监视器, 采用FDTD仿真可获得电场强度随波长和位置的分布结果(E(λ, x, y, z)), G随波长和位置的分布由下式计算:

    G(λ,x,y,z)=πε(λ)E(λ,x,y,z)h,
    (5)

    式中, hε''(λ)分别为普朗克常数和Ga0.84In0.16As0.14Sb0.86介电函数的虚部. 将(5)式代入(1)—(4)式, 并采用Congenda公司的TCAD(technology computer-aided design)软件进行求解[26], 该软件采用牛顿迭代法对载流子输运方程进行数值求解, 所采用的网格密精度为2 nm.

    基于以上理论模型, 器件量子效率QE的计算公式写为

    QE(λ)=JSC(λ)qΦinc(λ)=Φabs(λ)Φinc(λ)JSC(λ)qΦabs(λ)=A(λ)C(λ),
    (6)

    式中, λ为入射光波长, JSC(λ)为短路电流密度, Фinc(λ)为入射光子流密度(单位时间单位波长间隔入射到单位面积上的光子数目), Фabs(λ)为单位时间单位波长间隔单位面积的p-n结有源区吸收的光子数, A(λ) = Фabs(λ)/Фinc(λ)和C(λ) = JSC(λ)/[abs(λ)]分别为p-n结有源区的光吸收率和光生载流子收集效率. 器件的暗电流密度J0可以在无光照时通过求解(1)—(4)式计算获得. 各层材料的光学常数和电学特性参数采用已报道的实验或理论数据[27-29].

    根据已报道的结果[30], 纳米柱高度H需要足够大以在其内部激发光学共振所需要的环形电场或磁场, 而H过高会增加NPA的寄生光吸收, 本文根据理论结果优化选择H = 300 nm, 重点讨论直径D和间距P对光学共振的影响. NPA面密度采用填充因子进行描述, 定义为F = D/P.

    图2(a)图2(b)分别给出了反射谱R(λ)和有源区吸收谱A(λ)随D的变化结果, 其中H = 300 nm, F = 0.6, p-n结有源区总厚度L = 1 µm. 由图2(b)可见, 在截止波长2.3 µm以下, 有源区具有一系列吸收峰, 与图2(a)反射谱的谷值相对应, 这些吸收峰与光学共振密切相关. 在波长小于AlAs0.06Sb0.96本征吸收截止波长0.75 µm的短波区, NPA窗口层具有较强的本征光吸收, 使得有源区吸收率较低.

    图 2 纳米柱直径D对Ga0.84In0.16As0.14Sb0.86 p-n结光学特性的影响 (a)表面反射谱; (b)有源区光吸收谱\r\nFig. 2. Effects of the nanopillar diameter D on the optical properties of the Ga0.84In0.16As0.14Sb0.86 p-n junction: (a) Surface reflectance spectrum; (b) absorption spectrum in active region.
    图 2  纳米柱直径D对Ga0.84In0.16As0.14Sb0.86 p-n结光学特性的影响 (a)表面反射谱; (b)有源区光吸收谱
    Fig. 2.  Effects of the nanopillar diameter D on the optical properties of the Ga0.84In0.16As0.14Sb0.86 p-n junction: (a) Surface reflectance spectrum; (b) absorption spectrum in active region.

    图2(b)中标记为1的吸收峰与NPA-BSR结构在有源区激发的F-P腔驻波共振有关, 共振波长主要与材料的光学常数和共振腔长度有关, 针对图1(a)的Ga0.84In0.16As0.14Sb0.86有源区谐振腔, 具体关系式写为[20]

    q=2naL/λf+(φ1+φ2)/(2π),
    (7)

    式中, λf为驻波共振波长, q为共振级数(整数), na为有源区折射率实部, L为有源区厚度, φ1, φ2分别为有源区前后表面光反射产生的相移. (7)式的计算结果与图2(b)中驻波共振峰位相符合.

    标记为2的吸收峰与纳米柱激发的Mie散射共振有关, 对于真空中的单根纳米柱, 根据Mie散射理论, 光沿着纳米柱轴向入射时, 共振波长与尺寸的关系为[18]

    λm=nwD/k,
    (8)

    式中, λm为Mie散射共振波长, nw为纳米柱折射率实部, D为纳米柱直径, k为共振级数(如k = 1为偶极子共振, 更高的k值则对应四极子、八极子等更高级别的共振模式). 图1(a)中, NPA制作在AlAs0.06Sb0.96窗口层表面, 其背面的窗口层及有源区会对Mie散射共振光场的分布产生影响, 但对共振波长的影响较小, (8)式的计算结果与图2(b)中的共振峰位基本相符合.

    标记为3的吸收峰与周期性NPA产生的Wood-Rayleigh反常衍射有关, 衍射波长与NPA周期(即图1(a)中相邻纳米柱的间距P)的关系为[31]

    λw=k/[P(nw±sinθ)],
    (9)

    式中, λw为反常衍射波长, θ为入射角(垂直入射时取为0). 图2(b)中的粉色线为根据(9)式计算的反常衍射线, 可见其与仿真所获得的吸收峰位相符合.

    根据图2的仿真结果, 优化选择纳米柱直径D为540 nm, 其激发的共振吸收峰分布在0.8—2.3 µm波段, 在2.3 µm带边附近吸收较强, 有利于增强宽波段范围的光电转换效率.

    图3给出了有源区吸收谱随NPA填充因子F的变化结果, 其中H = 300 nm, D = 540 nm, L = 1 µm. 根据文献报道, 增加F会增强纳米柱之间的相互作用, 使共振峰展宽, 但是共振吸收峰的强度会降低, 因此需要根据实际器件的应用需求进行优化选择. 根据图3的结果, 本文优化选择F为0.6, 其在截止波长以下的宽波段具有最优的吸收率.

    图 3 纳米柱填充因子F对Ga0.84In0.16As0.14Sb0.86 p-n结有源区的光吸收谱的影响\r\nFig. 3. Effects of the nanopillar fill factor F on the absorption of the Ga0.84In0.16As0.14Sb0.86 p-n junction active region.
    图 3  纳米柱填充因子F对Ga0.84In0.16As0.14Sb0.86 p-n结有源区的光吸收谱的影响
    Fig. 3.  Effects of the nanopillar fill factor F on the absorption of the Ga0.84In0.16As0.14Sb0.86 p-n junction active region.

    图4(a)(d)分别给出了NPA-BSR双面光调控结构、NPA单面光调控结构、表面1/4波长Si3N4增透膜(中心波长1.6 µm)和BSR双面光调控结构、表面1/4波长Si3N4增透膜单面光调控结构对Ga0.84In0.16As0.14Sb0.86有源区光吸收率的增强效果. NPA尺寸选择为上述优化值, 即H = 300 nm, D = 540 nm, F = 0.6. 有源区厚度L较大时, 单面与双面光调控对有源区光吸收的增强效果相差不大, 但是前者在1.0—2.3 µm的长波段吸收率随有源区厚度降低而迅速降低, 主要是因为长波段吸收系数较低, 使得薄有源区透射率较高. 基于表面1/4波长Si3N4增透膜的双面光调控结构在有源区厚度较薄时可以在中心波长附近较窄的波段范围内获得较高吸收率, 但其与NPA-BSR相比有一定的差距.

    图 4 不同光学结构下Ga0.84In0.16As0.14Sb0.86 p-n结有源区的光吸收谱 (a)NPA和BSR双面光调控结构; (b)NPA单面光调控结构; (c)表面1/4波长Si3N4增透膜和BSR双面光调控结构; (d)表面1/4波长Si3N4增透膜单面光调控结构. 其中NPA尺寸为H = 300 nm, D = 540 nm, F = 0.6, Si3N4增透膜的中心波长设计为1.6 µm\r\nFig. 4. Absorption spectrums of the Ga0.84In0.16As0.14Sb0.86 p-n junction active region under different optical structures: (a) NPA-BSR two-side light modulation structure; (b) NPA one-side light modulation structure; (c) surface λ/4 Si3N4 anti-reflection film and BSR two-side light modulation structure; (d) surface λ/4 Si3N4 anti-reflection film one-side light modulation structure. The NPA geometry parameters are set as H = 300 nm, D = 540 nm and F = 0.6, central wavelength of the λ/4 Si3N4 anti-reflection film is set as 1.6 µm.
    图 4  不同光学结构下Ga0.84In0.16As0.14Sb0.86 p-n结有源区的光吸收谱 (a)NPA和BSR双面光调控结构; (b)NPA单面光调控结构; (c)表面1/4波长Si3N4增透膜和BSR双面光调控结构; (d)表面1/4波长Si3N4增透膜单面光调控结构. 其中NPA尺寸为H = 300 nm, D = 540 nm, F = 0.6, Si3N4增透膜的中心波长设计为1.6 µm
    Fig. 4.  Absorption spectrums of the Ga0.84In0.16As0.14Sb0.86 p-n junction active region under different optical structures: (a) NPA-BSR two-side light modulation structure; (b) NPA one-side light modulation structure; (c) surface λ/4 Si3N4 anti-reflection film and BSR two-side light modulation structure; (d) surface λ/4 Si3N4 anti-reflection film one-side light modulation structure. The NPA geometry parameters are set as H = 300 nm, D = 540 nm and F = 0.6, central wavelength of the λ/4 Si3N4 anti-reflection film is set as 1.6 µm.

    根据图4(a)的仿真结果, 本文提出的NPA-BSR双面光调控结构对Ga0.84In0.16As0.14Sb0.86有源区光吸收的增强效果较为明显, L超过3 µm时在1.0—2.3 µm宽波段的平均吸收率超过95%, L降低至1 µm时平均吸收率接近90%. 对于未采用双面光调控结构的器件, 充分吸收入射光所需要的有源区厚度在5 µm以上, 这与已报道的实验和理论结果相符合[10,25,28,29].

    根据(6)式, 光电转换量子效率QE(λ)主要和Ga0.84In0.16As0.14Sb0.86有源区的光吸收率A(λ)和光生载流子收集效率C(λ)有关, 前者已在3.1节进行了讨论, 后者主要受载流子复合率、迁移率、有源区掺杂浓度和厚度等因素的影响. 复合机制主要有直接复合、间接复合(SRH复合)、俄歇复合和表面复合. 直接复合、俄歇复合和迁移率等相关物理参数均与材料属性和工作温度有关, 本文将器件工作温度设定为室温(300 K). 针对图1(a)中的p-n结有源区, n型层位于p型层上方, 其结构和相关物理参数见表1所示, 本文重点讨论SRH复合、表面复合、有源区总厚度等实验因素对QE(λ)的影响.

    表 1  室温(300 K)下Ga0.84In0.16As0.14Sb0.86 p-n结有源区的结构和物理参数[27-29]
    Table 1.  Structure and physical parameters of the Ga0.84In0.16As0.14Sb0.86 p-n junction at room temperature (300 K)[27-29].
    材料结构参数 物理参数
    厚度/µm掺杂浓度/cm–3 直接复合系数/(cm3·s–1)俄歇复合系数/(cm6·s–1)SRH本征复合寿命/µs表面复合速度/(cm·s–1)少子迁移率/(cm2·V·s–1)
    n型层0.21 × 1017 1 × 10–10Cn = 1 × 10–27τ0 = 10–3—1SF = 0—106µh = 618
    p型层L—0.2 1 × 1017 Cp = 2 × 10–28SB = 0—106µe = 5162
    下载: 导出CSV 
    | 显示表格

    图5将计算所得总厚度L为5 µm的Ga0.84In0.16As0.14Sb0.86 p-n结的内量子效率(IQE)与Wang等[32]报道的实验数据进行了比较, 可见理论与实验结果相符合.

    图 5 室温(300 K)下Ga0.84In0.16As0.14Sb0.86 p-n结的IQE\r\nFig. 5. IQE for Ga0.84In0.16As0.14Sb0.86 p-n junction diode at 300 K.
    图 5  室温(300 K)下Ga0.84In0.16As0.14Sb0.86 p-n结的IQE
    Fig. 5.  IQE for Ga0.84In0.16As0.14Sb0.86 p-n junction diode at 300 K.

    图6为不同复合参数下载流子收集效率谱C(λ)随波长λ和有源区总厚度L的变化结果, 由图可见, L主要影响1.0—2.3 µm波段的C(λ)值. Ga0.84In0.16As0.14Sb0.86半导体在靠近截止波长的长波区光吸收系数较低[27], 入射光进入材料的深度较大, 增大厚度L会增加深部光吸收产生的载流子扩散至空间电荷区的距离, 导致复合几率增加, 因此在长波区C(λ)随L增大而降低. SRH本征复合寿命(τ0)和有源区前后表面复合速度(SFSB)主要与材料工艺质量有关, 降低τ0或增加SFSB都会使光生载流子的有效输运距离变短, 导致在长波区LC(λ)的影响增大. 短波区光吸收系数较高, 入射光主要在前表面附近被吸收, 因此增加SF会使短波区C(λ)降低. 根据图6, 在器件所关注的1.0—2.3 µm红外波段, 降低有源区厚度可以降低复合对C(λ)的不利影响, 对L = 1 µm的薄有源区, 将τ0降低为10–3 µs或将SF, SB增大为106 cm/s时, C(λ)仍在90%以上. 图6(a)中的复合参数为已报道的实验数据[29], 可见L = 1 µm时在1.0—2.3 µm红外波段的C(λ)值在99%以上.

    图 6 不同复合参数下载流子收集效率谱C(λ)随波长λ和有源区总厚度L的变化 (a) τ0 =1 µs, SF = SB = 102 cm/s; (b) τ0 =10–3 µs, SF = SB = 102 cm/s; (c) τ0 =1 µs, SF = 106 cm/s, SB = 102 cm/s; (d) τ0 =1 µs, SF = 102 cm/s, SB = 106 cm/s. τ0为SRH复合本征寿命, SF和SB分别为有源区前后表面复合速度\r\nFig. 6. Dependence of the carrier collection efficiency spectrums C(λ) on λ and active region thickness L for different carrier recombination parameters: (a) τ0 =1 µs, SF = SB = 102 cm/s; (b) τ0 =10–3 µs, SF = SB = 102 cm/s; (c) τ0 =1 µs, SF = 106 cm/s, SB = 102 cm/s; (d) τ0 =1 µs, SF = 102 cm/s, SB = 106 cm/s.
    图 6  不同复合参数下载流子收集效率谱C(λ)随波长λ和有源区总厚度L的变化 (a) τ0 =1 µs, SF = SB = 102 cm/s; (b) τ0 =10–3 µs, SF = SB = 102 cm/s; (c) τ0 =1 µs, SF = 106 cm/s, SB = 102 cm/s; (d) τ0 =1 µs, SF = 102 cm/s, SB = 106 cm/s. τ0为SRH复合本征寿命, SFSB分别为有源区前后表面复合速度
    Fig. 6.  Dependence of the carrier collection efficiency spectrums C(λ) on λ and active region thickness L for different carrier recombination parameters: (a) τ0 =1 µs, SF = SB = 102 cm/s; (b) τ0 =10–3 µs, SF = SB = 102 cm/s; (c) τ0 =1 µs, SF = 106 cm/s, SB = 102 cm/s; (d) τ0 =1 µs, SF = 102 cm/s, SB = 106 cm/s.

    图7(a)图7(b)分别给出了复合参数对厚度1 µm和6 µm的有源区量子效率QE(λ)的影响结果, 可以看到后者受复合参数的影响远高于前者. NPA-BSR双面光调控结构可以将光限制在较薄的Ga0.84In0.16As0.14Sb0.86有源区进行吸收, 而载流子在薄有源区中的输运距离较短, 因此复合对输运效率的影响较小, 从而有利于获得较高的光电转换量子效率. 根据图7(a), 在当前工艺水平下, 厚度1 µm的有源区在1.0—2.3 µm波段的QE(λ)平均值接近90%.

    图 7 复合参数对不同厚度有源区量子效率谱QE(λ)的影响 (a) L = 1 µm; (b) L = 6 µm\r\nFig. 7. Effects of the carrier recombination parameters on the quantum efficiency spectrums for different active region thickness L: (a) L = 1 µm; (b) L = 6 µm.
    图 7  复合参数对不同厚度有源区量子效率谱QE(λ)的影响 (a) L = 1 µm; (b) L = 6 µm
    Fig. 7.  Effects of the carrier recombination parameters on the quantum efficiency spectrums for different active region thickness L: (a) L = 1 µm; (b) L = 6 µm.

    暗电流密度J0是Ga0.84In0.16As0.14Sb0.86 p-n结的另一项重要性能参数. 对于红外光伏型探测器, 其暗电流噪声正比于J0, 降低J0是提升器件探测能力的重要手段. 对于红外热光伏电池, 降低J0可以有效提升器件的开路电压, 从而提升能量转换效率. 对于实际的p-n结器件, 暗电流主要有p-n的反向饱和电流(又称为扩散暗电流, 本文以J0d表示)、空间电荷区的产生和复合电流(Jr-g)以及边缘漏电流(Jl). Jr-g主要与空间电荷区的深能级杂质有关, 改善材料的生长质量可以有效降低深能级杂质的浓度, 从而降低Jr-g. Jl主要与器件边缘电学质量有关, 改善边缘钝化工艺可以有效降低Jl. J0d主要和复合率、迁移率和材料结构有关, 本文主要讨论复合参数和厚度对J0d的影响, Ga0.84In0.16As0.14Sb0.86有源区的结构和其他相关物理参数取为表1中的值.

    图8为各种复合机制所决定的扩散暗电流密度随有源区厚度L的变化结果, 其中, J0dA, J0dB, J0dSRHJ0dS分别为俄歇复合、带间直接复合、SRH复合和表面复合所决定的扩散电流密度. 由图8可见, 体复合决定的扩散暗电流密度(即J0dA, J0dBJ0dSRH)均随L增大而增大. 其中J0dB远低于J0dAJ0dSRH, 表明带间直接复合的影响可以忽略. J0dSRH主要由τ0决定, 其主要和材料生长质量有关. 根据已报道的实验数据, 通过改善材料生长工艺可以将τ0提升至1 µs以上, 此时J0dSRH远低于J0dA. J0dA由少子的俄歇复合寿命决定, 本文仅考虑了带间俄歇复合, 相关复合参数主要与Ga0.84In0.16As0.14Sb0.86的能带结构、本征载流子浓度等本质属性和工作温度等因素有关, 因此提升工艺质量很难有效抑制俄歇复合. 根据图7的计算结果, L从6 µm降低至1 µm时, J0dA的值从约10–5 A/cm2降低至约10–6 A/cm2, 降低幅度达到1个数量级, 表明降低有源区厚度可以有效抑制俄歇复合对暗电流的贡献. 表面复合决定的扩散暗电流密度J0dSL的变化不大, 由图8可见, 表面复合速度大于103 cm/s时, 对厚度低于4 µm的有源区, J0dS高于体复合电流密度, 因此改善有源区前后表面的钝化工艺对于降低薄有源区的J0d较为关键.

    图 8 各种复合机制所决定的扩散暗电流密度随有源区厚度L的变化\r\nFig. 8. Dependence of the diffusion dark current densities on active region thickness L.
    图 8  各种复合机制所决定的扩散暗电流密度随有源区厚度L的变化
    Fig. 8.  Dependence of the diffusion dark current densities on active region thickness L.

    图9为室温下Ga0.84In0.16As0.14Sb0.86 p-n结的复合参数和LJ0d的影响结果. 黑色曲线所对应的复合参数为当前已报道的实验数据[29], 可见L = 1 µm时J0d约为5 × 10–6 A/cm2, 根据图8, 在此条件下J0d主要来自于表面复合. 进一步改善有源区前后表面的钝化工艺, 将表面复合速度降低为100 cm/s时(图9中的红色曲线), L = 1 µm时的J0d约为2 × 10–6 A/cm2. L超过5 µm时, J0d的值超过10–5 A/cm2, 且俄歇复合成为主要的贡献. 图9还给出了Dashiell等[29]报道的实验数据, 其与本文的计算结果相符合.

    图 9 室温下Ga0.84In0.16As0.14Sb0.86 p-n结的J0d随复合参数和L的变化\r\nFig. 9. Dependence of the J0d on carrier recombination parameters and L for Ga0.84In0.16As0.14Sb0.86 p-n junction at room temperature.
    图 9  室温下Ga0.84In0.16As0.14Sb0.86 p-n结的J0d随复合参数和L的变化
    Fig. 9.  Dependence of the J0d on carrier recombination parameters and L for Ga0.84In0.16As0.14Sb0.86 p-n junction at room temperature.

    本文分析了NPA-BSR双面光调控结构Ga0.84In0.16As0.14Sb0.86 p-n结的红外光电性能. 利用NPA激发Mie散射共振和Wood-Rayleigh反常衍射, 利用NPA-BSR结构在p-n结有源区激发驻波共振, 通过合理选择材料结构, 这些光学效应可以将红外波段的光限制在较薄的有源区进行吸收. 降低有源区厚度可以提升光生载流子收集效率, 并降低俄歇复合对暗电流密度的贡献. 理论结果表明, 在当前工艺水平下, NPA-BSR双面光调控结构使厚度1 µm的Ga0.84In0.16As0.14Sb0.86在1.0—2.3 µm宽波段范围内获得超过99%的载流子收集效率和高达90%的平均量子转换效率, 在室温下的扩散暗电流密度可降低至5 × 10–6 A/cm2. 理论分析表明, 扩散暗电流密度主要来自于表面复合, 因此改善有源区前后表面的钝化工艺还可以进一步降低暗电流. NPA-BSR的关键制备工艺为纳米压印刻蚀和晶圆键合, 这些工艺技术较为成熟, 有利于实现大面积批量生产. 上述结果表明, NPA-BSR双面光调控结构可以有效提升Ga0.84In0.16As0.14Sb0.86 p-n结的光电性能, 通过改善工艺条件, 有望实现在室温下工作的高量子效率低暗电流密度红外光电器件, 在红外光电探测和热光伏发电等领域具有重要应用价值.

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  • 图 1  双面光调控Ga0.84In0.16As0.14Sb0.86 p-n结 (a)材料结构; (b)三维FDTD光学仿真设置

    Figure 1.  Illustration of the two-side light modulation structured Ga0.84In0.16As0.14Sb0.86 p-n junction: (a) Material structure; (b) cross-section of the three-dimensional FDTD optical simulation setup.

    图 2  纳米柱直径D对Ga0.84In0.16As0.14Sb0.86 p-n结光学特性的影响 (a)表面反射谱; (b)有源区光吸收谱

    Figure 2.  Effects of the nanopillar diameter D on the optical properties of the Ga0.84In0.16As0.14Sb0.86 p-n junction: (a) Surface reflectance spectrum; (b) absorption spectrum in active region.

    图 3  纳米柱填充因子F对Ga0.84In0.16As0.14Sb0.86 p-n结有源区的光吸收谱的影响

    Figure 3.  Effects of the nanopillar fill factor F on the absorption of the Ga0.84In0.16As0.14Sb0.86 p-n junction active region.

    图 4  不同光学结构下Ga0.84In0.16As0.14Sb0.86 p-n结有源区的光吸收谱 (a)NPA和BSR双面光调控结构; (b)NPA单面光调控结构; (c)表面1/4波长Si3N4增透膜和BSR双面光调控结构; (d)表面1/4波长Si3N4增透膜单面光调控结构. 其中NPA尺寸为H = 300 nm, D = 540 nm, F = 0.6, Si3N4增透膜的中心波长设计为1.6 µm

    Figure 4.  Absorption spectrums of the Ga0.84In0.16As0.14Sb0.86 p-n junction active region under different optical structures: (a) NPA-BSR two-side light modulation structure; (b) NPA one-side light modulation structure; (c) surface λ/4 Si3N4 anti-reflection film and BSR two-side light modulation structure; (d) surface λ/4 Si3N4 anti-reflection film one-side light modulation structure. The NPA geometry parameters are set as H = 300 nm, D = 540 nm and F = 0.6, central wavelength of the λ/4 Si3N4 anti-reflection film is set as 1.6 µm.

    图 5  室温(300 K)下Ga0.84In0.16As0.14Sb0.86 p-n结的IQE

    Figure 5.  IQE for Ga0.84In0.16As0.14Sb0.86 p-n junction diode at 300 K.

    图 6  不同复合参数下载流子收集效率谱C(λ)随波长λ和有源区总厚度L的变化 (a) τ0 =1 µs, SF = SB = 102 cm/s; (b) τ0 =10–3 µs, SF = SB = 102 cm/s; (c) τ0 =1 µs, SF = 106 cm/s, SB = 102 cm/s; (d) τ0 =1 µs, SF = 102 cm/s, SB = 106 cm/s. τ0为SRH复合本征寿命, SFSB分别为有源区前后表面复合速度

    Figure 6.  Dependence of the carrier collection efficiency spectrums C(λ) on λ and active region thickness L for different carrier recombination parameters: (a) τ0 =1 µs, SF = SB = 102 cm/s; (b) τ0 =10–3 µs, SF = SB = 102 cm/s; (c) τ0 =1 µs, SF = 106 cm/s, SB = 102 cm/s; (d) τ0 =1 µs, SF = 102 cm/s, SB = 106 cm/s.

    图 7  复合参数对不同厚度有源区量子效率谱QE(λ)的影响 (a) L = 1 µm; (b) L = 6 µm

    Figure 7.  Effects of the carrier recombination parameters on the quantum efficiency spectrums for different active region thickness L: (a) L = 1 µm; (b) L = 6 µm.

    图 8  各种复合机制所决定的扩散暗电流密度随有源区厚度L的变化

    Figure 8.  Dependence of the diffusion dark current densities on active region thickness L.

    图 9  室温下Ga0.84In0.16As0.14Sb0.86 p-n结的J0d随复合参数和L的变化

    Figure 9.  Dependence of the J0d on carrier recombination parameters and L for Ga0.84In0.16As0.14Sb0.86 p-n junction at room temperature.

    表 1  室温(300 K)下Ga0.84In0.16As0.14Sb0.86 p-n结有源区的结构和物理参数[27-29]

    Table 1.  Structure and physical parameters of the Ga0.84In0.16As0.14Sb0.86 p-n junction at room temperature (300 K)[27-29].

    材料结构参数 物理参数
    厚度/µm掺杂浓度/cm–3 直接复合系数/(cm3·s–1)俄歇复合系数/(cm6·s–1)SRH本征复合寿命/µs表面复合速度/(cm·s–1)少子迁移率/(cm2·V·s–1)
    n型层0.21 × 1017 1 × 10–10Cn = 1 × 10–27τ0 = 10–3—1SF = 0—106µh = 618
    p型层L—0.2 1 × 1017 Cp = 2 × 10–28SB = 0—106µe = 5162
    DownLoad: CSV
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Publishing process
  • Received Date:  03 November 2020
  • Accepted Date:  04 January 2021
  • Available Online:  22 May 2021
  • Published Online:  05 June 2021

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