High performance laminated FEP/PTFE piezoelectret films for air-borne sound transducers

An Zhi-Hong; Huang Lin-Min; Zhao Jin-Bo; Hu Qian-Qian; Sun Zhuan-Lan; Zheng Huan; Zhang Xiao-Qing

doi:10.7498/aps.71.20211609

Abstract

Piezoelectret (also known as ferroelectret) is a kind of cellular electret material with strong piezoelectric effect. Such a material exhibits flexibility, low density and small acoustic impedance. Therefore, piezoelectret is an ideal material for air-borne flexible sound transducers. Aiming at high-sensitivity and thermal-stability sound transducers, in this work, laminated fluorinated polyethylene propylene (FEP) and polytetrafluoroethylene (PTFE) piezoelectret film with a regular cellular microstructure is prepared by a procedure involving template-based cellular structure formation and polarization. The results show that the characteristic acoustic impedance of such a laminated FEP/PTFE film is 0.02 MRayl. The quasi-static piezoelectric charge coefficient d₃₃ up to 800 pC/N is achieved in a small applied pressure range. The maximum value of sensitivity of the microphones based on laminated FEP/PTFE piezoelectrets film can reach to 6.4 mV/Pa at 1 kHz. Besides, the frequency response curve of the device is flat in the whole audio range. For an ultrasonic transmitter with a diameter of 20 mm, driven by a voltage of 600 V (V_p), the sound pressure level (SPL) generated by it increases from 80 to 90 dB (Ref. 20 µPA) as frequency increases from 40 to 80 kHz. The thermal stability of the sensitivity for the transducers made of such a laminated FEP/PTFE piezoelectret film is much superior to that of polypropylene (PP) piezoelectret based device. The sensitivity of the present device remains 26% of the initial value after being annealed at 125 ℃ for 211 h. The improvement of thermal stability is attributed to the excellent space charge storage stability of FEP and PTFE.

Keywords:

Authors and contacts

1.
Laboratory of Low Frequency Electromagnetic Communication Technology, 722 Research Institute, China State Shipbuilding Corporation Limited, Wuhan 430205, China
2.
Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China

Corresponding author: Zhang Xiao-Qing, x.zhang@tongji.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61761136004).

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References

[1]	https://doi.org/10.1080/15583724.2021.1901737 [2021-8-10]
[2]	Lim H R, Kim H S, Qazi R, Kwon Y T, Jeong J W, Yeo W H 2020 Adv. Mater. 32 1901924 Google Scholar
[3]	Ma J, Fan H, Zhang W, Sui J, Wang C, Zhang M, Zhao N, Yadav A K, Wang W, Dong W, Wang S 2020 Sens. Actuators, B 305 127456 Google Scholar
[4]	Lia H, Fan H, Wang B, Wang C, Zhang M, Chen G, Jiang X, Zhao N, Lu J, Zhang J 2020 J. Eur. Ceram. Soc. 40 3072 Google Scholar
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[6]	Ma J, Fan H, Li Z, Jia Y, Yadav A K, Dong G, Wang W, Dong W, Wang S 2021 Sens. Actuators, B 334 129677 Google Scholar
[7]	Mattiat O E, Mason W P 1972 Phys. Today 25 57
[8]	Lee M C 1982 IEEE Trans. Son. Ultrason 29 170
[9]	Gururaja R T, Schulze A W, Cross E L, Newnham E R 1985 IEEE Transactions on Sonics and Ultrasonics 32 481 Google Scholar
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[11]	Bauer S 2006 IEEE Trans. Dielectr. Electr. Insul. 13 953 Google Scholar
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[14]	Sessler G M, Hillenbrand J 2013 Appl. Phys. Lett. 103 122904 Google Scholar
[15]	Kressmann R 2001 J. Acoust. Soc. Am. 109 1412 Google Scholar
[16]	Hillenbrand J, Sessler G M 2004 J. Acoust. Soc. Am. 116 3267 Google Scholar
[17]	Hillenbrand J, Sessler G 2006 IEEE Trans. Dielectr. Electr. Insul. 13 973 Google Scholar
[18]	Sessler G M, Hillenbrand J 2009 IEEE International Ultrasonics Symposium Rome Sept. 20–23, 2009 pp393−397
[19]	Hillenbrand J, Haberzettl S, Sessler G M 2011 14th International Symposium on Electrets Montpellier, France, Aug. 28−31, 2011 pp27−28
[20]	Ealo J L, Jimenez A R, Seco F, Prieto C 2006 IEEE Ultrasonics Symposium Vancouver, BC, Canada, Oct. 2−6, 2006 pp812−815
[21]	Ealo J L, Camacho J, Fritsch C, Seco F, Roa J 2008 IEEE International Ultrasonics Symposium Abstract Book Beijing, China, Nov. 2–5, 2008 p891
[22]	Ealo J L, Camacho J J, Fritsch C IEEE Trans. Ultrason. Ferr. 56 848
[23]	Ealo J, Camacho J, Seco F, Fritsch C 2010 AIP Conf. Proc. 1211 933
[24]	Gaal M, Dring J, Bartusch J, Lange T, Kreutzbruck M 2013 AIP Conference Proceedings 1511 1543
[25]	Gaal M, Bartusch J, Dohse E, Kreutzbruck M, Amos J 2014 AIP Conf. Proc. 1581 471
[26]	Gaal M, Kotschate D 2018 12th European Conference on Non-Destructive Testing, Goteborg, Sweden, June 11, 2018 pp1−9
[27]	Gaal M, Kotschate D, Bente K 2019 Proceedings of Meetings on Acoustics 38 030003 Google Scholar
[28]	Xue Y, Zhang X, Chadda R, Sessler G M, Kupnik M 2020 J. Acoust. Soc. Am. 147 EL421 Google Scholar
[29]	孙转兰, 张晓青, 曹功勋, 王学文, 夏钟福 2010 物理学报 59 5061 Google Scholar Sun Z L, Zhang X Q, Cao G X, Wang X W, Xia Z F 2010 Acta Phys. Sin. 59 5061 Google Scholar
[30]	Sun Z, Zhang X, Xia Z, Qiu X, Wirges W, Gerhard R, Zeng C, Zhang C, Wang B 2011 Appl. Phys. A 105 197 Google Scholar
[31]	Axel, Mellinger 2003 IEEE Trans. Dielectr. Electr. Insul. 10 842 Google Scholar
[32]	Rosen C Z, Hiremath B V 1992 Piezoelectricity (New York: American Institute of Physics) p215
[33]	Zhang X Q, Sessler G M, Xue Y, Ma X C 2016 J. Phys. D:Appl. Phys. 49 205502 Google Scholar
[34]	http://sinocera.net/en/piezo_material.asp [2021-8-10]
[35]	Ohigashi H 1976 J. Appl. Phys. 47 949 Google Scholar
[36]	Zhang X, Hillenbrand J, Sessler G M 2007 J. Appl. Phys 101 850
[37]	Zhang X, Hillenbrand J, Sessler G, Haberzettl S, Lou K 2012 Appl. Phys. A 107 621 Google Scholar
[38]	Xue Y, Zhang X, Zheng J, Liu T, Zhu B 2018 IEEE Trans. Dielectr. Electr. Insul. 25 228 Google Scholar

Cited By

图 1 有序结构FEP/PTFE复合膜压电驻极体的制备工艺

Figure 1. Preparation process of laminated FEP/PTFE piezoelectret film.

DownLoad: Full-Size Img PowerPoint

图 2 (a)样品夹具的结构示意图; (b)样品夹具实物图; (c)声学测试系统示意图

Figure 2. (a) Schematic view of the sample fixture; (b) optical image of the sample fixture; (c) schematic diagram of the measuring system.

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图 3 FEP/PTFE复合膜压电驻极体的复电容谱. 样品直径为20 mm, 厚度为140 µm

Figure 3. Complex capacitance spectrum of a laminated FEP/PTFE piezoelectret sample. The diameter and the thickness of the sample are 20 mm and 140 µm, respectively

DownLoad: Full-Size Img PowerPoint

图 4 FEP/PTFE复合膜压电驻极体的准静态压电系数$Y$的压强特性　(a)小压强范围; (b)大压强范围

Figure 4. Pressure dependence of quasi-static piezoelectric d₃₃ coefficient of laminated FEP/PTFE piezoelectret films: (a) Small pressure range; (b) broad pressure range.

DownLoad: Full-Size Img PowerPoint

图 5 FEP/PTFE复合膜压电驻极体的热稳定性和电荷输运特性　(a)未经过热老化处理样品在90和120 ℃下的等温衰减图线; (b)经过90℃预老化33.5 h和120 ℃预老化30.5 h处理的样品在90 ℃下的等温衰减图线; (c)热刺激放电实验中样品的电荷分布示意图; (d)不同温度下经过5 h热老化处理样品的短路热刺激放电电流谱. 升温速率为3 ℃/min

Figure 5. Thermal stability and dynamics of charges in laminated FEP/PTFE piezoelectret films. (a) Normalized isothermal decay of piezoelectric d₃₃ coefficients as a function of annealing time at 90 and 120 °C, respectively. The samples are not pre-aged before tests. (b) Normalized isothermal decay of piezoelectric d₃₃ coefficients as a function of annealing time at 90 °C for the samples pre-aged at 90 °C for 33.5 h and at 120 °C for 30.5 h. (c) Schematic diagram of the charge distribution and shift in the sample during the TSD measurement. (d) TSD current spectra of the laminated FEP/PTFE piezoelectret film samples after pre-aging treatment at various temperature for 5 h. The heating rate is 3 ℃/min.

DownLoad: Full-Size Img PowerPoint

图 6 基于FEP/PTFE复合膜压电驻极体的麦克风的灵敏度　(a) 在125 ℃下经历不同时间老化的样品的电压灵敏度的频响曲线; (b)在125 ℃下, 麦克风电压灵敏度的衰减曲线

Figure 6. Sensitivity of a microphone based on laminated FEP/PTFE piezoelectret film: (a) Piezoelectric d₃₃ coefficient as a function of frequency for the sample annealed at 125 ℃ with different annealing time; (b) isothermal decay of sensitivity at 1 kHz for a microphone at annealing temperature of 125 ℃.

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图 7 基于FEP/PTFE复合膜压电驻极体的超声波发射器的性能　(a) 声压级随频率的变化; (b)声压级与驱动电压之间的关系. 样品直径为20 mm, 测试位置在器件轴线上距离样品表面100 mm处

Figure 7. Performance of the ultrasonic transmitters based on laminated FEP/PTFE piezoelectret films: (a) Sound pressure level as a function of frequency; (b) relationship between sound pressure level and driving voltage. The diameter of the sample is 20 mm, and the test position is 100 mm away from the surface of the sample on the device axis.

DownLoad: Full-Size Img PowerPoint

表 1 几种典型压电材料的性能比较^[34,35]

Table 1. Performance comparison of several typical piezoelectric materials^[34,35].

材料	d₃₃ /(pC·N^–1)	g₃₃ /(V·m·N^–1)	Z /(MRayl)	FOM_V = $ {d}_{33}\times {g}_{33} $ /GPa^–1	参考文献
PZT-5H	590	0.020	35	0.012	[34]
PVDF	–35	–0.26	3.9	0.0091	[35]
FEP/PTFE复合膜压电驻极体	~800	~70	0.02	~56	本研究

DownLoad: CSV

[1]	https://doi.org/10.1080/15583724.2021.1901737 [2021-8-10]
[2]	Lim H R, Kim H S, Qazi R, Kwon Y T, Jeong J W, Yeo W H 2020 Adv. Mater. 32 1901924 Google Scholar
[3]	Ma J, Fan H, Zhang W, Sui J, Wang C, Zhang M, Zhao N, Yadav A K, Wang W, Dong W, Wang S 2020 Sens. Actuators, B 305 127456 Google Scholar
[4]	Lia H, Fan H, Wang B, Wang C, Zhang M, Chen G, Jiang X, Zhao N, Lu J, Zhang J 2020 J. Eur. Ceram. Soc. 40 3072 Google Scholar
[5]	Hu N, Lin L, Tan J, Wang W, Lei L, Fan H, Wang J, Müller-Buschbaum P, Zhong Q 2020 ACS Appl. Mater. Interfaces 12 56480 Google Scholar
[6]	Ma J, Fan H, Li Z, Jia Y, Yadav A K, Dong G, Wang W, Dong W, Wang S 2021 Sens. Actuators, B 334 129677 Google Scholar
[7]	Mattiat O E, Mason W P 1972 Phys. Today 25 57
[8]	Lee M C 1982 IEEE Trans. Son. Ultrason 29 170
[9]	Gururaja R T, Schulze A W, Cross E L, Newnham E R 1985 IEEE Transactions on Sonics and Ultrasonics 32 481 Google Scholar
[10]	Bauer S, Gerhard-Multhaupt R, Sessler G M 2004 Phys. Today 57 37
[11]	Bauer S 2006 IEEE Trans. Dielectr. Electr. Insul. 13 953 Google Scholar
[12]	张添乐, 黄曦, 郑凯, 张欣梧, 王宇杰, 武丽明, 张晓青, 郑洁, 朱彪 2014 物理学报 63 157703 Google Scholar Zhang T L, Huang X, Zheng K, Zhang X W, Wang Y J, Wu L M, Zhang X Q, Zheng J, Zhu B 2014 Acta Phys. Sin. 63 157703 Google Scholar
[13]	张咪, 左西, 杨同青, 张晓青 2020 物理学报 69 247701 Google Scholar Zhang M, Zuo X, Yang T Q, Zhang X Q 2020 Acta Phys. Sin. 69 247701 Google Scholar
[14]	Sessler G M, Hillenbrand J 2013 Appl. Phys. Lett. 103 122904 Google Scholar
[15]	Kressmann R 2001 J. Acoust. Soc. Am. 109 1412 Google Scholar
[16]	Hillenbrand J, Sessler G M 2004 J. Acoust. Soc. Am. 116 3267 Google Scholar
[17]	Hillenbrand J, Sessler G 2006 IEEE Trans. Dielectr. Electr. Insul. 13 973 Google Scholar
[18]	Sessler G M, Hillenbrand J 2009 IEEE International Ultrasonics Symposium Rome Sept. 20–23, 2009 pp393−397
[19]	Hillenbrand J, Haberzettl S, Sessler G M 2011 14th International Symposium on Electrets Montpellier, France, Aug. 28−31, 2011 pp27−28
[20]	Ealo J L, Jimenez A R, Seco F, Prieto C 2006 IEEE Ultrasonics Symposium Vancouver, BC, Canada, Oct. 2−6, 2006 pp812−815
[21]	Ealo J L, Camacho J, Fritsch C, Seco F, Roa J 2008 IEEE International Ultrasonics Symposium Abstract Book Beijing, China, Nov. 2–5, 2008 p891
[22]	Ealo J L, Camacho J J, Fritsch C IEEE Trans. Ultrason. Ferr. 56 848
[23]	Ealo J, Camacho J, Seco F, Fritsch C 2010 AIP Conf. Proc. 1211 933
[24]	Gaal M, Dring J, Bartusch J, Lange T, Kreutzbruck M 2013 AIP Conference Proceedings 1511 1543
[25]	Gaal M, Bartusch J, Dohse E, Kreutzbruck M, Amos J 2014 AIP Conf. Proc. 1581 471
[26]	Gaal M, Kotschate D 2018 12th European Conference on Non-Destructive Testing, Goteborg, Sweden, June 11, 2018 pp1−9
[27]	Gaal M, Kotschate D, Bente K 2019 Proceedings of Meetings on Acoustics 38 030003 Google Scholar
[28]	Xue Y, Zhang X, Chadda R, Sessler G M, Kupnik M 2020 J. Acoust. Soc. Am. 147 EL421 Google Scholar
[29]	孙转兰, 张晓青, 曹功勋, 王学文, 夏钟福 2010 物理学报 59 5061 Google Scholar Sun Z L, Zhang X Q, Cao G X, Wang X W, Xia Z F 2010 Acta Phys. Sin. 59 5061 Google Scholar
[30]	Sun Z, Zhang X, Xia Z, Qiu X, Wirges W, Gerhard R, Zeng C, Zhang C, Wang B 2011 Appl. Phys. A 105 197 Google Scholar
[31]	Axel, Mellinger 2003 IEEE Trans. Dielectr. Electr. Insul. 10 842 Google Scholar
[32]	Rosen C Z, Hiremath B V 1992 Piezoelectricity (New York: American Institute of Physics) p215
[33]	Zhang X Q, Sessler G M, Xue Y, Ma X C 2016 J. Phys. D:Appl. Phys. 49 205502 Google Scholar
[34]	http://sinocera.net/en/piezo_material.asp [2021-8-10]
[35]	Ohigashi H 1976 J. Appl. Phys. 47 949 Google Scholar
[36]	Zhang X, Hillenbrand J, Sessler G M 2007 J. Appl. Phys 101 850
[37]	Zhang X, Hillenbrand J, Sessler G, Haberzettl S, Lou K 2012 Appl. Phys. A 107 621 Google Scholar
[38]	Xue Y, Zhang X, Zheng J, Liu T, Zhu B 2018 IEEE Trans. Dielectr. Electr. Insul. 25 228 Google Scholar

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