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In a microwave circuit system, the discontinuity caused by electromagnetic wave entering into another transmission medium from one transmission medium will greatly affect the transmission performance of the system, which has always been the focus of microwave circuit design. When the electromagnetic wave band enters into the millimeter wave and terahertz band, how to realize the efficient and low loss transmission of electromagnetic wave from the metal rectangular waveguide interface to the dielectric substrate is the key to the realization of millimeter wave terahertz communication system. Substrate integrated waveguide to rectangular waveguide transition structure is an important structure connecting waveguide interface and planar circuit in millimeter wave and terahertz communication system, and it is the basis of designing planar antenna array. In this paper, a W-band and D-band substrate integrated waveguide to rectangular waveguide transition structure is designed, which improves the transmission performance and expands the bandwidth through the stepped structure. On this basis, a one-in-two divider structure is designed, with an empty cavity structure used to reduce the loss and expand the bandwidth. These two structures have the characteristics of simple structure and easy processing, and their practicalities are verified by simulation optimization and actual low temperature co-fired ceramic substrate processing and assembly test. The actual test results show that the substrate integrated waveguide to rectangular waveguide transition structure can achieve a return loss of less than –10 dB in a frequency ranges of 126–149 GHz and 112–139 GHz, the one-in-two divider structure can achieve a return loss of less than –10 dB in the frequency band of 132–155 GHz.
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Keywords:
- substrate integrated waveguide /
- transition structure /
- millimeter wave-terahertz /
- low temperature co-fired ceramic
[1] Wang J, Hao Z C, Kui-Kui F 2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Chengdu, China, July 20–22, 2016 pp1–3
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Li H 2005 Ph. D. Dissertation (Nanjing: Southeast University) (in Chinese)
[5] 潘俊 2018 硕士学位论文 (成都: 电子科技大学)
Pan J 2018 M. S. Dissertation (Chengdu: University of Electronic Science and Technology of China) (in Chinese)
[6] 张帆 2010 硕士学位论文 (长沙: 国防科学技术大学)
Zhang F 2010 M. S. Dissertation (Changsha: National University of Defense Technology) (in Chinese)
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[18] Bu S, Jin H, Wang W, Luo G, Chin K S 2019 IEEE MTT-S International Wireless Symposium (IWS) Guangzhou, China, May 19–22, 2019 pp1–3
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Google Scholar
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Google Scholar
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Google Scholar
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[24] 赵发举 2020 硕士学位论文 (成都: 电子科技大学)
Zhao F J 2020 M. S. Dissertation (Chengdu: University of Electronic Science and Technology of China) (in Chinese)
[25] Tran T H, Hirokawa J 2011 International Conference on Advanced Technologies for Communications (ATC 2011) Da Nang, Vietnam, August 2–4, 2011 pp187–190
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图 1 SIW的典型结构
Figure 1. Typical structure of SIW.
图 2 SIW-RWG的垂直过渡结构 (a)结构模型; (b)电场传输示意图
Figure 2. Schematic diagram of vertical transition structure of SIW-RWG: (a) Structural model; (b) schematic diagram of electric field transmission
图 3 D波段SIW-RWG过渡结构 (a)仿真模型; (b)展开视图
Figure 3. D-band SIW-RWG transition structure: (a) Simulation model; (b) expanded view.
图 4 D波段SIW-RWG过渡结构的仿真结果 (a) 回波损耗S11; (b) 插入损耗S21
Figure 4. Simulation results of D-band SIW-RWG transition structure: (a) Return loss S11; (b) insertion loss S21.
图 5 W波段SIW-RWG过渡结构 (a) 结构模型; (b) 回波损耗S11仿真结果
Figure 5. W-band SIW-RWG transition structure: (a) Structural model; (b) simulation results of return loss S11.
图 7 D波段一分二过渡结构 (a)仿真模型; (b)展开视图
Figure 7. D-band one to two divider transition structure: (a) Simulation model; (b) expanded view.
图 8 D波段一分二过渡结构的仿真结果 (a) 回波损耗S11; (b) 插入损耗S21
Figure 8. Simulation results of D-band one to two divider transition structure: (a) Return loss S11; (b) insertion loss S21
图 9 W波段一分二过渡结构 (a) 仿真结构模型; (b) 仿真结果回波损耗S11
Figure 9. W-band one to two divider transition structure: (a) Structural model of simulation; (b) simulation results of return loss S11.
图 10 SIW-RWG过渡结构的测试基板模型
Figure 10. Test substrate model of SIW-RWG transition structure.
图 11 SIW-RWG过渡结构测试基板模型的仿真结果 (a) 回波损耗S11; (b) 插入损耗S21
Figure 11. Simulation results of test substrate model of SIW-RWG transition structure: (a) Return loss S11; (b) insertion loss S21.
图 12 另一组参数得到的测试基板模型的仿真结果
Figure 12. Simulation results of the test substrate model with another set of parameters.
图 13 一分二过渡结构的测试基板模型
Figure 13. Test substrate model of one to two divider transition structure.
图 14 一分二过渡结构测试基板模型的仿真结果 (a) 回波损耗S11; (b) 插入损耗S21
Figure 14. Simulation results of test substrate model of one to two divider transition structure: (a) Return loss S11; (b) insertion loss S21.
图 15 为实际测试所设计的波导转接件
Figure 15. Waveguide adapter designed for practical test.
图 16 测试所用的LTCC基板
Figure 16. LTCC substrate for test.
图 17 波导转接件实物图
Figure 17. Actual diagram of waveguide adapter.
图 18 粘接了导电胶膜的波导转接件和待粘接的LTCC基板
Figure 18. Waveguide adapter bonded with conductive adhesive film and LTCC substrate.
图 19 SIW-RWG过渡结构和一分二过渡结构实测场景
Figure 19. Measured scenes of SIW-RWG transition structure and one to two divider transition structure.
图 22 一分二过渡结构测试结果
Figure 22. Test results of one to two divider transition structure.
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[1] Wang J, Hao Z C, Kui-Kui F 2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Chengdu, China, July 20–22, 2016 pp1–3
[2] Song H J 2017 Proc. IEEE 105 1121
Google Scholar
[3] Xu R, Gao S, Izquierdo B S, Gu C, Reynaert P, Standaert A, Gibbons G J, Bösch W, Gadringer M E, Li D 2020 IEEE Access 8 57615
Google Scholar
[4] 李皓 2005 博士学位论文 (南京: 东南大学)
Li H 2005 Ph. D. Dissertation (Nanjing: Southeast University) (in Chinese)
[5] 潘俊 2018 硕士学位论文 (成都: 电子科技大学)
Pan J 2018 M. S. Dissertation (Chengdu: University of Electronic Science and Technology of China) (in Chinese)
[6] 张帆 2010 硕士学位论文 (长沙: 国防科学技术大学)
Zhang F 2010 M. S. Dissertation (Changsha: National University of Defense Technology) (in Chinese)
[7] Mohamed I, Sebak A 2018 IEEE Microw. Wirel. Compon. Lett. 28 966
Google Scholar
[8] Abdel-Wahab W, Ehsandar A, Al-Saedi H, Safavi-Naeini S 2016 Electron. Lett. 52 1465
Google Scholar
[9] Abdel-Wahab W M, Safavi-Naeini S 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting Atlanta, Georgia, USA, July 7–12, 2019 pp963–964
[10] Li Y, Luk K 2014 IEEE Microw. Wirel. Compon. Lett. 24 590
Google Scholar
[11] Zhang D, Xu Z, Xiao Y, Sun H 2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP) Xi’an, China, October 16–19 2017 pp1–3
[12] Dai X 2016 IEEE Microw. Wirel. Compon. Lett. 26 897
Google Scholar
[13] Cao B, Wang H, Huang Y, Wang J, Sheng W 2013 IEEE Microw. Wirel. Compon. Lett. 23 572
Google Scholar
[14] Hansen S, Pohl N 2019 49th European Microwave Conference (EuMC) Paris, France, October 1–3, 2019 pp352–355
[15] Karki S K, Ala-Laurinaho J, Zheng J, Lahti M, Viikari V 2019 16 th European Radar Conference (EuRAD) Paris Expo Porte de Versailles, France, October 2–4, 2019 pp321–324
[16] Abuzaid H, Doghri A, Wu K, Shamim A 2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Seattle, WA, USA, June 2–7, 2013 pp1–3
[17] Zhang T, Li L, Zhu Z, Cui T J 2019 IEEE Microw. Wirel. Compon. Lett. 29 532
Google Scholar
[18] Bu S, Jin H, Wang W, Luo G, Chin K S 2019 IEEE MTT-S International Wireless Symposium (IWS) Guangzhou, China, May 19–22, 2019 pp1–3
[19] Esteban H, Belenguer A, Sánchez J R, Bachiller C, Boria V E 2017 IEEE Microw. Wirel. Compon. Lett. 27 685
Google Scholar
[20] Parment F, Ghiotto A, Vuong T P, Carpentier L, Wu K 2017 IEEE MTT-S International Microwave Symposium (IMS) Honololu, HI, USA, June 4–9, 2017 pp719–722
[21] Isapour A, Kouki A 2019 IEEE Trans. Microw. Theory 67 868
Google Scholar
[22] Tajima T, Song H, Yaita M 2016 IEEE Trans. Microw. Theory 64 106
Google Scholar
[23] Hansen S, Kueppers S, Pohl N 2018 48th European Microwave Conference (EuMC) Madrid, Spain, September 23–27, 2018 pp117–120
[24] 赵发举 2020 硕士学位论文 (成都: 电子科技大学)
Zhao F J 2020 M. S. Dissertation (Chengdu: University of Electronic Science and Technology of China) (in Chinese)
[25] Tran T H, Hirokawa J 2011 International Conference on Advanced Technologies for Communications (ATC 2011) Da Nang, Vietnam, August 2–4, 2011 pp187–190
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