Control of N atom content in Fe-Fe<sub>3</sub>N film with high saturation magnetization and low conductivity

Chen Zhen; Lan Ming-Di; Li Guo-Jian; Sun Shang; Liu Shi-Ying; Wang Qiang

doi:10.7498/aps.72.20221577

Abstract

Microelectronic devices have a wide range of application prospects. In order to make microelectronic devices that have excellent high-frequency characteristics, developing of soft magnetic films with high saturation magnetization, low coercivity and high resistivity becomes the key to the research. In this work, Fe-Fe₃N soft magnetic films with different numbers of N atoms are prepared by radio-frequency atomic source assisted vacuum thermal evaporation. Among them, the RF atom source provides N atoms with higher chemical activity than N molecules, which reduces the formation energy between Fe atoms and N atoms. The vacuum thermal evaporation is beneficial to accurately controlling the growth rate, impurity concentration and composition ratio of multiple compounds of the film at the atomic level. The combination of the two Fe aom and N atom is easier to form nitrides with Fe atoms. Thus in this way the Fe-N films with stable structure are obtained. In the prepared Fe-Fe₃N soft magnetic film, the introduction of N atoms makes the surface of the film more uniform, resulting in the increase of density. Compared with Fe, surface roughness is reduced by two times, and the crystallinity is obviously enhanced. Owing to the high saturation magnetization, the content of Fe₃N phase is increased by 29% and the (102) orientation of Fe₃N increases to 0.64. Therefore the directionality of the magnetic moment arrangement is improved. Comparing with Fe film, the saturation magnetization of the film is increased by 55.2%, reaching 1705.6 emu/cm³. In addition, with the increase of the (102) orientation of Fe₃N, a large number of lattice mismatches are produced, which impedes the growth of Fe and Fe₃N grains and reduces the grain size and anisotropy of the film. Thus the coercivity of the film decreases. The coercivity (50.3 Oe) is 68.6% lower than that of the Fe film. At the same time, the larger lattice mismatch results in the increase of heterointerface, which promotes the carrier scattering and increases the resistivity of Fe-Fe₃N thin film. The resistivity (8.80 μΩ·m) of Fe-Fe₃N thin film is 7 times higher than that of Fe thin film. Therefore, this research provides a new method for studying and developing soft magnetic films with high saturation magnetization, low coercivity and high resistivity.

Keywords:

Authors and contacts

1.
Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China
2.
State Key Laboratory of Rolling Technology and Continuous Rolling Automation, Northeastern University, Shenyang 110819, China
3.
School of Metallurgy, Northeastern University, Shenyang 110819, China
4.
School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
5.
School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China

Corresponding author: Li Guo-Jian, gjli@epm.neu.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2021YFA1600204).

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References

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Cited By

图 1 不同N₂流量的N发射光谱(a)以及N原子峰的面积比和峰强度图(b)

Figure 1. N emission spectra (a) and the area ratio and peak intensity of N atom peaks at different N₂ fluxes (b)

DownLoad: Full-Size Img PowerPoint

图 2 不同N₂流量下的Fe-Fe₃N薄膜XRD图谱

Figure 2. XRD patterns of Fe-Fe₃N thin films under different N₂ flow rates.

DownLoad: Full-Size Img PowerPoint

图 3 不同N₂流量下Fe-Fe₃N薄膜的N 1s (a)和Fe 2p_3/2 (b) XPS精细谱、Fe—N键与Fe—Fe键含量比(c)

Figure 3. N 1s (a) and Fe 2p_3/2 (b) XPS fine spectra, Fe—N bond and Fe—Fe bond content ratio (c) of Fe-Fe₃N films under different N₂ flow rates.

DownLoad: Full-Size Img PowerPoint

图 4 0 sccm薄膜和15 sccm薄膜中Fe-N体系相图^[45]和Fe和N原子的百分含量

Figure 4. Phase diagram of Fe-N system in 0 sccm film and 15 sccm film^[45] and percentage of Fe and N atoms.

DownLoad: Full-Size Img PowerPoint

图 5 不同N₂流量下Fe-Fe₃N薄膜的SEM表面形貌图和AFM三维形貌图　(a) 0 sccm; (b) 10 sccm; (c) 13 sccm; (d) 15 sccm

Figure 5. SEM and AFM 3 D morphologies of Fe-Fe₃N films under different N₂ flow rates: (a) 0 sccm; (b) 10 sccm; (c) 13 sccm; (d) 15 sccm

DownLoad: Full-Size Img PowerPoint

图 6 室温时不同N₂流量下Fe-Fe₃N薄膜面内易轴方向的M-H曲线和0 sccm薄膜、15 sccm薄膜不同方向的M-H曲线

Figure 6. M-H curves of the in-plane easy axis direction of Fe-Fe₃N films under different N₂ flow rates at room temperature and M-H curves of 0 sccm films and 15 sccm films in different directions.

DownLoad: Full-Size Img PowerPoint

图 7 Fe-Fe₃N薄膜晶体取向示意图

Figure 7. Schematic diagram of crystal orientation of Fe-Fe₃N films.

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图 8 不同N₂流量下Fe-Fe₃N薄膜室温的迁移率和载流子浓度

Figure 8. Mobility and carrier concentration of Fe-Fe₃N films at room temperature under different N₂ flow rates.

DownLoad: Full-Size Img PowerPoint

图 9 不同N₂流量下Fe-Fe₃N薄膜室温的饱和磁化强度、矫顽力以及电阻率

Figure 9. Room temperature saturation magnetization, coercivity and resistivity of Fe-Fe₃N films under different N₂ flow rates.

DownLoad: Full-Size Img PowerPoint

[1]	Fan J P, Sun J, Yang Y, Liang R Y, Jiang Y N, Zhang J, Xu X H 2016 J. Alloy. Compd. 662 541 Google Scholar
[2]	Huang M Q, Wu C, Jiang Y Z, Yan M 2015 J. Alloy. Compd. 644 124 Google Scholar
[3]	Shokrollahi H, Janghorban K J 2012 Mater. Process. Tech. 189 1 Google Scholar
[4]	Patelli N, Cugini F, Wang D, Sanna S, Solzi M, Hahn H, Pasquini L 2021 J. Alloy. Compd. 890 161863 Google Scholar
[5]	Kim D, Kim J, Lee J, Kang M K, Kim S, Park S H, Kim J, Choa Y H, Lim J H 2019 J. Electrochem. Soc. 166 131 Google Scholar
[6]	Swain M, Kong H, Lee J, Park S, Jeen H 2018 Mater. Res. Express 5 116104 Google Scholar
[7]	Zhang Y, Turghun M, Huang C J, Wang T, Wang F F, Shi W Z 2018 Acta Metall. Sin. Engl. 31 623 Google Scholar
[8]	Brajpuriya R, Rajan S, Jani S, Vyas A 2018 Surf. Interface Anal. 51 371 Google Scholar
[9]	Liu S Y, Ma Y H, Chang L, Li G J, Wang J H, Wang Q 2018 Thin Solid Films 651 1 Google Scholar
[10]	Li G J, Li M M, Wang J H, Du J J, Wang K, Wang Q 2017 J. Magn. Magn. Mater. 423 353 Google Scholar
[11]	Meng B Y, Yang B, Zhang X X, Zhou B H, Li X P, Yu R H 2020 Mater. Chem. Phys. 242 122478 Google Scholar
[12]	Adi W A, Yunasfi 2020 Mat. Sci. Eng. B 262 114760 Google Scholar
[13]	Akdogan N G, Akdogan O 2019 AIP Adv. 9 125139 Google Scholar
[14]	Naito M, Uehara K, Takeda R, Taniyasu Y, Yamamoto H 2015 J. Cryst. Growth. 415 36 Google Scholar
[15]	Hattori T, Miyamachi T, Yokoyama T, Komori F 2019 J. Phys. Condens. Matter 31 255001 Google Scholar
[16]	Fang H A, Zhang R, Liu B, Tao Z K, Wang X F, Xie Z L, Xiu X Q, Zheng Y D 2012 J. Phys. D 45 315002 Google Scholar
[17]	Zhang Y, Mi W B, Wang X C, Zhang X X 2015 Phys. Chem. Chem. Phys. 17 15435 Google Scholar
[18]	Dirba I, Komissinskiy P, Gutfleisch O, Alff L 2015 J. Appl. Phys. 117 173911 Google Scholar
[19]	Higashikozono S, Ito K, Takata F, Gushi, Toko K, Suemasu T 2017 J. Cryst. Growth 468 691 Google Scholar
[20]	Houari A, Matar S F, Belkhir M A, Nakhl M 2007 Phys. Rev. B 75 064420 Google Scholar
[21]	Telling N D, Jones G A, Grundy P J, Blythe H J 2001 J. Magn. Magn. Mater. 226–230 1659 Google Scholar
[22]	Mosca D H, Dionisio P H, Schreiner W H, Baumvol T J R, Achete C 1990 J. Appl. Phys. 67 7514 Google Scholar
[23]	Ji N, Wu Y M, Wang J P 2011 J. Appl. Phys. 109 07B767 Google Scholar
[24]	Ji N, Osofsky M S, Lauter V, Allard L F, Li X, Jensen K L, Ambaye H, Lara-Curzio E, Wang J P 2011 Phys. Rev. B 84 245310 Google Scholar
[25]	Ji N A, Allard L F, Lara-Curzio E, Wang J P 2011 Appl. Phys. Lett. 98 092506 Google Scholar
[26]	Coehoorn R, Daalderop G H O, Jansen H J F 1993 Phys. Rev. B 48 3830 Google Scholar
[27]	Li Z W, Morrish A H, Ortiz C 2001 J. Mater. Sci. 36 5835 Google Scholar
[28]	Lu Q H, Xie M L, Han G L, Zheng B, Song Y Z, Qiang J, Wang X Q, Wu Z G, Yan P X, Liu W M 2019 J. Magn. Magn. Mater. 474 76 Google Scholar
[29]	Fang H, Peng X, Li Y, Tao Z K 2019 Mater. Res. Express 6 106443 Google Scholar
[30]	Zhang L L, Gao S P, Hu Q W, Qi L, Feng L H, Lei L 2017 Mater. Chem. Phys. 197 94 Google Scholar
[31]	Nadzri N, Ibrahim D, Sompon S 2019 IOP Conference Series Materials Science and Engineering Beijing, China, May 11-13, 2019 p012047
[32]	Hung W, Wang X L 2008 Nanoscale Res. Lett. 3 260 Google Scholar
[33]	Zhang P, Wang X B, Wang W, Lei X, Yin W X, Yang H 2015 RSC Adv. 5 68758 Google Scholar
[34]	Sundararajan J A, Kaur M, Jiang W L, McCloy J S, Qiang Y 2014 J. Appl. Phys. 115 17B507 Google Scholar
[35]	Yamaguchi K, Yui T, Ichikawa Y, Yamaki K, Kakeya I, Kadowaki K, Suemasu T 2006 Jpn. J. Appl. Phys. 45 705 Google Scholar
[36]	Ahmad Z, Cross G B, Vernon M, Gebregiorgis D, Deocampo D, Kozhanov A 2019 Appl. Phys. Lett. 115 223101 Google Scholar
[37]	Kikuchi T, Somintac A S, Ariyada O, Wada M, Ohachi T 2006 J. Cryst. Growth 292 221 Google Scholar
[38]	Kuwano K, Nezu A, Matsuura H, Akatsuka H 2016 Jpn. J. Appl. Phys. 55 086101 Google Scholar
[39]	Agarwal S, Hoex B, Van De Sanden M C M, Maroudas D, Aydil E S 2003 Appl. Phys. Lett. 83 4918 Google Scholar
[40]	Du J J, Li G J, Wang Q, Ma Y H, Cao Y Z, He J C 2015 Vacuum 121 88 Google Scholar
[41]	Sato H, Yamashita D, Ban S 2008 J. Ceram. Soc. Jpn. 116 28 Google Scholar
[42]	Yin W X, Zhang D G, Zhang P, Wang X B, Wang X B, Wang W, Lei X. Shi Z, Yang H 2016 J. Alloy. Compd. 688 828 Google Scholar
[43]	Cheng Y H, Zheng R K, Liu H, Tian Y, Li Z Q 2009 Phys. Rev. B 80 174412 Google Scholar
[44]	Lv Z Q, Fu W T, Sun S H, Wang Z H, Fan W, Qv M G 2010 Solid State Sci. 12 404 Google Scholar
[45]	Wriedt H, Gokcen G, Nafziger R H 1987 Mater. Sci. 8 355 Google Scholar
[46]	Fan X A, Wu Z Y, Li G Q, Wang J, Xiang Z D, Gan Z H 2016 Mater. Design 89 1251 Google Scholar
[47]	Yang B, Li X P, Guo R Y, Yu R H 2017 Mater. Design 121 272 Google Scholar
[48]	Khan W, Wang Q, Jin X, Feng T F 2017 Materials 10 217 Google Scholar
[49]	杜娇娇, 李国建, 王强, 马永会, 王慧敏, 李萌萌 2015 金属学报 51 799 Google Scholar Du J J, Li G J, Wang Q, Ma Y H, Wang H M, Li M M 2015 Acta Metall. Sin. 51 799 Google Scholar
[50]	Aravindh S A, Jaya S M, Valsakumar M C, Sundar C S 2012 Superlattice. Microst. 51 92 Google Scholar
[51]	Yartseva N S, Yartsev S V, Parlebas J C 2008 Surf. Sci. 602 3388 Google Scholar
[52]	Sun Y, Gao R W, Han B P, Liu M, Han G B, Feng W C 2007 Prog. Nat. Sci-Mater. 17 131 Google Scholar
[53]	Ding J, Li Y, Chen L F, Deng C R, Shi Y, Chow Y S, Gang T B 2001 J. Alloys Compd. 314 262 Google Scholar
[54]	Herzer G 1990 IEEE. Trans. Mag. 26 1397 Google Scholar
[55]	Kronmvler H, Fischer R, Seeger M, Zern A 1996 J. Phys. D Appl. Phys. 29 2274 Google Scholar
[56]	Zhao N, Wang W, Lei X, Ye Z T, Chen X D, Ding H, Yang H 2017 J. Mater. Sci. 28 15701 Google Scholar
[57]	Gupta R, Tayal A, Amir S M, Gupta M, Gupta A, Horisberger M, Stahn J 2011 J. Appl. Phys. 111 103520 Google Scholar
[58]	Naganuma H, Nakatani R, Endo Y, Kawamura Y, Yamamoto M 2016 Sci. Technol. Adv. Mat. 5 101 Google Scholar
[59]	Mayadas A F, Shatzkes M 1970 Phys. Rev. B 1 1382 Google Scholar
[60]	Zhang Z Z, Wu S X, Niu Y, Jiang J, Wang C 2019 J. Mater. Sci. 30 5177 Google Scholar

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Control of N atom content in Fe-Fe₃N film with high saturation magnetization and low conductivity

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Corresponding author: Li Guo-Jian, gjli@epm.neu.edu.cn

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Control of N atom content in Fe-Fe3N film with high saturation magnetization and low conductivity

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Corresponding author: Li Guo-Jian, gjli@epm.neu.edu.cn

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Control of N atom content in Fe-Fe₃N film with high saturation magnetization and low conductivity