Numerical simulation of inductively coupled Ar/O<sub>2</sub> plasma

Zhang Yu-Han; Zhao Xin-Qian; Liang Ying-Shuang; Guo Yuan-Yuan

doi:10.7498/aps.73.20240436

Abstract

In the inductively coupled plasma (ICP) discharge, surface processes, such as reflection, de-excitation, and recombination, can occur when active species arrive at material surfaces, which accordingly influences the plasma properties. In this work, a fluid model is used to study the Ar/O₂ plasma generated by ICP reactors made of different materials. In simulation, sticking coefficient is employed to estimate the surface reactions on different materials. As the reactor material changes from stainless steel to anodized aluminum to Cu, the sticking coefficient of surface reaction O→1/2O₂ decreases accordingly. It is found that the reactor material has a great effect on species density. In the stainless steel reactor, the density of O atoms at grounded state and excited state are much lower because more O₂ molecules are generated from the surface reaction, yielding a much higher density of $ {\text{O}}_2^ + $ molecular ions which are mainly created from the ionization process of O₂ molecules. Similarly, the high density of O₂ molecules also enhances the production of ${{{\mathrm{O}}} _2}\left( {{{\mathrm{a}}^1}{\Delta _{\mathrm{g}}}} \right)$ molecules through the excitation process and O^– ions through the dissociation attachment reaction. On the contrary, more electrons are consumed via the collisions between electrons and O₂ molecules or $ {\text{O}}_2^ + $ molecular ions. Therefore, the electron density obtained in the Cu reactor is highest. The density of Ar⁺ ions and Ar_m atoms also increase with sticking coefficient decreasing. The density of O⁺ ions and $ {\text{O}}_2^ + $ molecular ions peak below the coil in the stainless steel reactor, whereas the radial uniformities are improved in the Cu reactor. In the three reactors, the electrons distribute evenly at the reactor center region. The O density and ${{{\mathrm{O}}} _2}\left( {{{\mathrm{a}}^1}{\Delta _{\mathrm{g}}}} \right)$ density significantly peak at the reactor center, while the maximum value of Ar⁺ density and Ar_m density are below the coil. As for O(¹D), the maximum density below the coil region moves toward the reactor center as the reactor material changes from stainless steel to Cu. Finally, the effect of sticking coefficient of O→1/2O₂ is studied. The results show that the O atom density decreases with the sticking coefficient increasing, but the opposite trend is observed in O₂ molecular density. It is noticed that the sticking coefficient has little effect on species density when it is higher than 0.5.

Keywords:

Authors and contacts

1.
School of Science, University of Science and Technology Liaoning, Anshan 114051, China
2.
School of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan 114051, China

Corresponding author: Liang Ying-Shuang, ysliang@ustl.edu.cn

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11805089), the Fundamental Research of the Education Department of Liaoning Province, China (Grant No. LJKMZ20220657), and the College Students’ Innovative Entrepreneurial Training Plan Program of University of Science and Technology Liaoning, China.

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References

[1]	Liu Y X, Zhang Q Z, Zhao K, Zhang Y R, Gao F, Song Y H, Wang Y N 2022 Chin. Phys. B 31 085202 Google Scholar
[2]	Tiyyagura H R, Puliyalil H, Filipič G, et al. 2020 Surf. Coat. Technol. 385 125434 Google Scholar
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[17]	佟磊, 赵明亮, 张钰如, 宋远红, 王友年 2024 物理学报 73 045201 Google Scholar Tong L, Zhao M L, Zhang Y R, Song Y H, Wang Y N 2024 Acta Phys. Sin. 73 045201 Google Scholar
[18]	Xue C, Gao F, Wen D Q, Wang Y N 2019 J. Appl. Phys. 125 023303 Google Scholar
[19]	Liu W, Xue C, Gao F, Liu Y X, Wang Y N, Zhao Y T 2021 Chin. Phys. B 30 065202 Google Scholar
[20]	孙晓艳 2017 博士学位论文(大连: 大连理工大学) Sun X Y 2017 Ph. D. Dissertation (Dalian: Dalian University of Technology
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[23]	Zhao X Q, Liang Y S, Guo Y Y 2022 Phys. Plasmas 29 113511 Google Scholar
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[29]	Bogaerts A 2009 Spectrochim. Acta B 64 126 Google Scholar
[30]	Gudmundsson J T, Thorsteinsson E G 2007 Plasma Sources Sci. Technol. 16 399 Google Scholar
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[34]	Mozetič M, Zalar A 2000 Appl. Surf. Sci. 158 263 Google Scholar
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[36]	Lee C, Lieberman M A 1995 J. Vac. Sci. Technol. A 13 368 Google Scholar
[37]	Guha J, Kurunczi P, Stafford L, Donnelly V M, Pu Y K 2008 J. Phys. Chem. C 112 8963 Google Scholar
[38]	Kitajima T, Nakano T, Makabe T 2006 Appl. Phys. Lett. 88 091501 Google Scholar
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[42]	Thorsteinsson E G, Gudmundsson J T 2010 Plasma Sources Sci. Technol. 19 055008 Google Scholar
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[44]	Kiehlbauch M W, Graves D B 2003 J. Vacuum Sci. Technol. A 21 660 Google Scholar
[45]	Liu W, Wen D Q, Zhao S X, Gao F, Wang Y N 2015 Plasma Sources Sci. Technol. 24 025035 Google Scholar
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Cited By

图 1 (a)电子密度和(b)电子温度随Ar含量变化

Figure 1. (a) Electron density and (b) electron temperature as a function of Ar fraction.

DownLoad: Full-Size Img PowerPoint

图 2 ICP腔室结构示意图

Figure 2. Schematic diagram of the ICP reactor.

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图 3 不同材质腔室放电中电子密度径向分布(Z = 6 cm)

Figure 3. Radial distributions of electron density at Z = 6 cm by different reactors.

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图 4 采用不锈钢腔室放电时, 不同方向的电子沉积功率密度空间分布　(a) R方向; (b) Z方向; (c) 角向

Figure 4. Spatial distributions of electron deposition power density from different direction in a stainless steel reactor: (a) R-direction; (b) Z-direction; (c) azimuthal direction.

DownLoad: Full-Size Img PowerPoint

图 5 不同材质腔室中$ {\text{O}}_2^ + $密度空间分布　(a) 不锈钢; (b) 阳极Al₂O₃; (c) Cu

Figure 5. Spatial distributions of $ {\text{O}}_2^ + $ density generated by different reactors: (a) Stainless steel; (b) anodized Al₂O₃; (c) Cu.

DownLoad: Full-Size Img PowerPoint

图 6 不同材质腔室中O⁺密度空间分布　(a) 不锈钢; (b) 阳极Al₂O₃; (c) Cu

Figure 6. Spatial distributions of O⁺ density generated by different reactors: (a) Stainless steel; (b) anodized Al₂O₃; (c) Cu.

DownLoad: Full-Size Img PowerPoint

图 7 不同材质腔室放电中Ar⁺密度径向分布(Z = 6 cm)

Figure 7. Radial distributions of Ar⁺ density by different reactors at Z = 6 cm.

DownLoad: Full-Size Img PowerPoint

图 8 不同材质腔室中O^–密度空间分布　(a) 不锈钢; (b) 阳极Al₂O₃; (c) Cu

Figure 8. Spatial distributions of O^– density generated by different reactors: (a) Stainless steel; (b) anodized Al₂O₃; (c) Cu.

DownLoad: Full-Size Img PowerPoint

图 9 不同材质腔室中O密度空间分布　(a) 不锈钢; (b) 阳极Al₂O₃; (c) Cu

Figure 9. Spatial distributions of O density generated by different reactors: (a) Stainless steel; (b) anodized Al₂O₃; (c) Cu.

DownLoad: Full-Size Img PowerPoint

图 10 不同材质腔室中O(D)密度空间分布　(a) 不锈钢; (b) 阳极Al₂O₃; (c) Cu

Figure 10. Spatial distributions of O(D) density generated by different reactors: (a) Stainless steel; (b) anodized Al₂O₃; (c) Cu.

DownLoad: Full-Size Img PowerPoint

图 11 不同材质腔室放电中, 中性粒子密度径向分布(Z = 6 cm)　(a) O₂; (b) O₂(a)

Figure 11. Radial distribution of neutral species density by different reactors at Z = 6 cm: (a) O₂; (b) O₂(a).

DownLoad: Full-Size Img PowerPoint

图 12 不同材质腔室放电中Ar_m密度径向分布(Z = 6 cm)

Figure 12. Radial distribution of Ar_m density by different reactors at Z = 6 cm.

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图 13 S4 O → 1/2O₂任意黏附系数下不同粒子密度分布(a) O; (b) O₂ (Z = 6 cm)

Figure 13. Effect of sticking coefficient of reaction S4 O → 1/2O₂ on neutral species density: (a) O; (b) O₂ (Z = 6 cm)

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表 1 模型中考虑的表面反应

Table 1. Surface reactions considered in the model.

序号	表面反应	黏附系数
序号	表面反应	不锈钢	阳极Al₂O₃	Cu
S1	Ar_r → Ar	1.0
S2	Ar_m → Ar	1.0
S3	Ar(4p) → Ar	1.0
S4	O → 1/2O₂	0.156	0.06	0.015
S5	O(D) → 1/2O₂	0.156	0.06	0.015
S6	O₂(a) → O₂	0.007	0.007	0.014
S7	O₂(b) → O₂	0.1

DownLoad: CSV

表 2 不同材质腔室下电子功率沉积密度最大值

Table 2. Maximum of electron deposition power density generated by different reactors.

腔室材料	电子沉积功率密度/(W·m^–3)
腔室材料	R向	Z向	角向
不锈钢	3.01×10⁴	1.95×10⁵	6.14×10⁵
阳极Al₂O₃	3.33×10⁴	2.06×10⁵	6.12×10⁵
Cu	4.86×10⁴	2.52×10⁵	6.15×10⁵

DownLoad: CSV

[1]	Liu Y X, Zhang Q Z, Zhao K, Zhang Y R, Gao F, Song Y H, Wang Y N 2022 Chin. Phys. B 31 085202 Google Scholar
[2]	Tiyyagura H R, Puliyalil H, Filipič G, et al. 2020 Surf. Coat. Technol. 385 125434 Google Scholar
[3]	Zhang Z Y, Ye Z B, Wang Z J, et al. 2019 Appl. Surf. Sci. 475 143 Google Scholar
[4]	Farias C E, Bianchi J C, Oliveira P R, et al. 2014 Mater. Res. 17 1251 Google Scholar
[5]	Cao F, Wang Y D, Li L, Guo B J, An Y P 2009 Scripta Mater. 61 231 Google Scholar
[6]	Ono T, Akagi T, Ichiki T 2009 J. Appl. Phys. 105 013314 Google Scholar
[7]	范惠泽, 刘凯, 黄永清, 蔡世伟, 任晓敏, 段晓峰, 王琦, 刘昊, 吴瑶 2017 真空科学与技术学报 37 286 Google Scholar Fan H Z, Liu K, Huang Y Q, Cai S W, Ren X M, Duan X F, Wang Q, Liu H, Wu Y 2017 Chin. J. Vac. Sci. Technol. 37 286 Google Scholar
[8]	Hoffman A, Gu Y, Tokash J, Tokash J, Woodward J, Rack P D 2020 ACS Appl. Mater. Interfaces 12 7345 Google Scholar
[9]	Chung T H, Kang H R, Bae M K 2012 Phys. Plasmas 19 113502 Google Scholar
[10]	Hsu C C, Nierode M A, Coburn J W, Graves D B 2006 J. Phys. D: Appl. Phys. 39 3272 Google Scholar
[11]	Du P C, Gao F, Wang X K, Liu Y X, Wang Y N 2021 Chin. Phys. B 30 035202 Google Scholar
[12]	Han X, Wei X, Xu H, Zhang W, Li Y, Li Y, Yang Z 2019 Vacuum 168 108821 Google Scholar
[13]	王彦洁 2018 硕士学位论文(大连: 大连理工大学) Wang Y J 2018 M. S. Dissertation (Dalian: Dalian University of Technology
[14]	Chen J L, Xu H J, Wei X L, Lü H Y, Song Z S, Chen Z H 2017 Vacuum 145 77 Google Scholar
[15]	Wan Y H, Liu W, Zhang Y R, Wang Y N 2015 Chin. Phys. B 24 095203 Google Scholar
[16]	Wen D Q, Zhang Y R, Lieberman M A, Wang Y N 2017 Plasma Process. Polym. 14 e1600100 Google Scholar
[17]	佟磊, 赵明亮, 张钰如, 宋远红, 王友年 2024 物理学报 73 045201 Google Scholar Tong L, Zhao M L, Zhang Y R, Song Y H, Wang Y N 2024 Acta Phys. Sin. 73 045201 Google Scholar
[18]	Xue C, Gao F, Wen D Q, Wang Y N 2019 J. Appl. Phys. 125 023303 Google Scholar
[19]	Liu W, Xue C, Gao F, Liu Y X, Wang Y N, Zhao Y T 2021 Chin. Phys. B 30 065202 Google Scholar
[20]	孙晓艳 2017 博士学位论文(大连: 大连理工大学) Sun X Y 2017 Ph. D. Dissertation (Dalian: Dalian University of Technology
[21]	Shibata M, Nakano N, Makabe T 1996 J. Appl. Phys. 80 6142 Google Scholar
[22]	Toneli D A, Pessoa R S, Roberto M, Gudmundsson J T 2015 J. Phys. D: Appl. Phys. 48 495203 Google Scholar
[23]	Zhao X Q, Liang Y S, Guo Y Y 2022 Phys. Plasmas 29 113511 Google Scholar
[24]	Zhang Y R, Gao F, Li X C, Bogaerts A, Wang Y N 2015 J. Vac. Sci. Technol. A 33 061303 Google Scholar
[25]	Zhang Y R, Hu Y T, Gao F, Song Y H, Wang Y N 2018 Plasma Source Sci. Technol. 27 055003 Google Scholar
[26]	Sun X Y, Zhang Y R, Li X C, Wang Y N 2017 Chin. Phys. B 26 015201 Google Scholar
[27]	Liang Y S, Liu Y X, Zhang Y R, Wang Y N 2020 J Appl. Phys. 127 133301 Google Scholar
[28]	Liang Y S, Xue C, Zhang Y R, Wang Y N 2021 Phys. Plasmas 28 013510 Google Scholar
[29]	Bogaerts A 2009 Spectrochim. Acta B 64 126 Google Scholar
[30]	Gudmundsson J T, Thorsteinsson E G 2007 Plasma Sources Sci. Technol. 16 399 Google Scholar
[31]	Gomez S, Stern P G, Graham W G 2002 Appl. Phys. Lett. 81 19 Google Scholar
[32]	Singh H, Coburn J W, Graves D B 2000 J. Appl. Phys. 88 3748 Google Scholar
[33]	Matsushita J, Sasaki K, Kadota K 1997 Jpn. J. Appl. Phys. 36 4747 Google Scholar
[34]	Mozetič M, Zalar A 2000 Appl. Surf. Sci. 158 263 Google Scholar
[35]	Booth J P, Sadeghi N 1991 J. Appl. Phys. 70 611 Google Scholar
[36]	Lee C, Lieberman M A 1995 J. Vac. Sci. Technol. A 13 368 Google Scholar
[37]	Guha J, Kurunczi P, Stafford L, Donnelly V M, Pu Y K 2008 J. Phys. Chem. C 112 8963 Google Scholar
[38]	Kitajima T, Nakano T, Makabe T 2006 Appl. Phys. Lett. 88 091501 Google Scholar
[39]	Sharpless R L, Slanger T G 1989 J. Chem. Phys. 91 7947 Google Scholar
[40]	O'Brien Jr R J, Myers G H 1970 J. Chem. Phys. 53 3832 Google Scholar
[41]	Vidaud P H, Wayne R P, Yaron M 1976 Chem. Phys. Lett. 38 306 Google Scholar
[42]	Thorsteinsson E G, Gudmundsson J T 2010 Plasma Sources Sci. Technol. 19 055008 Google Scholar
[43]	Gudmundsson J, Kimura T, Lieberman M 1999 Plasma Sources Sci. Technol. 8 22 Google Scholar
[44]	Kiehlbauch M W, Graves D B 2003 J. Vacuum Sci. Technol. A 21 660 Google Scholar
[45]	Liu W, Wen D Q, Zhao S X, Gao F, Wang Y N 2015 Plasma Sources Sci. Technol. 24 025035 Google Scholar
[46]	Toneli D A, Pessoa R S, Roberto M, Gudmundsson J T 2015 J. Phys. D: Appl. Phys. 48 325202 Google Scholar

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Numerical simulation of inductively coupled Ar/O₂ plasma

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Corresponding author: Liang Ying-Shuang, ysliang@ustl.edu.cn

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Numerical simulation of inductively coupled Ar/O2 plasma

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Corresponding author: Liang Ying-Shuang, ysliang@ustl.edu.cn

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Numerical simulation of inductively coupled Ar/O₂ plasma