Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

Wu Tie-Feng; Zhang He-Ming; Wang Guan-Yu; Hu Hui-Yong

doi:10.7498/aps.60.027305

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Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong. Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2011, 60(2): 027305. DOI: 10.7498/aps.60.027305

Citation:

Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong. Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2011, 60(2): 027305. DOI: 10.7498/aps.60.027305

Citation:

Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong. Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2011, 60(2): 027305. DOI: 10.7498/aps.60.027305