Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (2): 027305    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor
Zhang He-Ming1, Wang Guan-Yu1, Hu Hui-Yong1, Wu Tie-Feng2
(1)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Micro-Electronics, Xidian University, Xi’an 710071, China; (2)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Micro-Electronics, Xidian University, Xi’an 710071, China;School of Information and Electronic Technology, Jiamusi University, Jiamusi 154007, China
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