A 2D semi-analytical model for the potential distribution of ultra-short channel MOSFET
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (9): 098502     doi:10.7498/aps.62.098502
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A 2D semi-analytical model for the potential distribution of ultra-short channel MOSFET
Han Ming-Jun1 2, Ke Dao-Ming1, Chi Xiao-Li1, Wang Min1, Wang Bao-Tong1
1. Institute of Electronics and Information, Anhui University, Hefei 230601, China;
2. Department of Electronics and Information, Wuhu Institute of Technology, Wuhu 241000, China
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